CA1033468A - Combination of a bipolar transistor and a mos field effect transistor - Google Patents

Combination of a bipolar transistor and a mos field effect transistor

Info

Publication number
CA1033468A
CA1033468A CA216,005A CA216005A CA1033468A CA 1033468 A CA1033468 A CA 1033468A CA 216005 A CA216005 A CA 216005A CA 1033468 A CA1033468 A CA 1033468A
Authority
CA
Canada
Prior art keywords
combination
field effect
mos field
transistor
effect transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA216,005A
Other languages
English (en)
French (fr)
Other versions
CA216005S (en
Inventor
Karl-Ulrich Stein
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Application granted granted Critical
Publication of CA1033468A publication Critical patent/CA1033468A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Transistors (AREA)
CA216,005A 1973-12-20 1974-12-13 Combination of a bipolar transistor and a mos field effect transistor Expired CA1033468A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2363577A DE2363577A1 (de) 1973-12-20 1973-12-20 Kombination aus einem bipolaren transistor und einem mos-feldeffekttransistor

Publications (1)

Publication Number Publication Date
CA1033468A true CA1033468A (en) 1978-06-20

Family

ID=5901421

Family Applications (1)

Application Number Title Priority Date Filing Date
CA216,005A Expired CA1033468A (en) 1973-12-20 1974-12-13 Combination of a bipolar transistor and a mos field effect transistor

Country Status (11)

Country Link
JP (1) JPS5094887A (sv)
AT (1) AT340481B (sv)
BE (1) BE823686R (sv)
CA (1) CA1033468A (sv)
CH (1) CH586959A5 (sv)
DE (1) DE2363577A1 (sv)
FR (1) FR2255710B2 (sv)
GB (1) GB1481184A (sv)
IT (1) IT1046735B (sv)
NL (1) NL7416703A (sv)
SE (1) SE404853B (sv)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3470632D1 (en) * 1983-02-03 1988-05-26 Fairchild Camera Instr Co High voltage mos/bipolar power transistor apparatus
DE3620686C2 (de) * 1986-06-20 1999-07-22 Daimler Chrysler Ag Strukturierter Halbleiterkörper
US4857766A (en) * 1987-10-30 1989-08-15 International Business Machine Corporation BiMos input circuit
WO2009019866A1 (ja) * 2007-08-07 2009-02-12 Kaori Takakubo 半導体装置及びその駆動方法

Also Published As

Publication number Publication date
BE823686R (fr) 1975-04-16
FR2255710A2 (sv) 1975-07-18
SE7416017L (sv) 1975-06-23
FR2255710B2 (sv) 1979-02-23
JPS5094887A (sv) 1975-07-28
NL7416703A (nl) 1975-06-24
CH586959A5 (sv) 1977-04-15
GB1481184A (en) 1977-07-27
SE404853B (sv) 1978-10-30
IT1046735B (it) 1980-07-31
AT340481B (de) 1977-12-12
DE2363577A1 (de) 1975-06-26
ATA917974A (de) 1977-04-15

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