CA1027025A - Method for making thermally oxidized boron doped polycrystalline silicon - Google Patents

Method for making thermally oxidized boron doped polycrystalline silicon

Info

Publication number
CA1027025A
CA1027025A CA201,627A CA201627A CA1027025A CA 1027025 A CA1027025 A CA 1027025A CA 201627 A CA201627 A CA 201627A CA 1027025 A CA1027025 A CA 1027025A
Authority
CA
Canada
Prior art keywords
polycrystalline silicon
doped polycrystalline
thermally oxidized
boron doped
oxidized boron
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA201,627A
Other languages
English (en)
French (fr)
Inventor
Paul T. Lin
Ronald E. Chappelow
Homi G. Sarkary
Joseph Doulin (Jr.)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of CA1027025A publication Critical patent/CA1027025A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32105—Oxidation of silicon-containing layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/934—Sheet resistance, i.e. dopant parameters

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)
  • Electrodes Of Semiconductors (AREA)
CA201,627A 1973-06-28 1974-06-04 Method for making thermally oxidized boron doped polycrystalline silicon Expired CA1027025A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US374426A US3874920A (en) 1973-06-28 1973-06-28 Boron silicide method for making thermally oxidized boron doped poly-crystalline silicon having minimum resistivity

Publications (1)

Publication Number Publication Date
CA1027025A true CA1027025A (en) 1978-02-28

Family

ID=23476767

Family Applications (1)

Application Number Title Priority Date Filing Date
CA201,627A Expired CA1027025A (en) 1973-06-28 1974-06-04 Method for making thermally oxidized boron doped polycrystalline silicon

Country Status (6)

Country Link
US (1) US3874920A (de)
JP (1) JPS5243066B2 (de)
CA (1) CA1027025A (de)
DE (1) DE2430859C3 (de)
FR (1) FR2234921B1 (de)
GB (1) GB1455949A (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1089298B (it) * 1977-01-17 1985-06-18 Mostek Corp Procedimento per fabbricare un dispositivo semiconduttore
US4381213A (en) * 1980-12-15 1983-04-26 Motorola, Inc. Partial vacuum boron diffusion process
US4356211A (en) * 1980-12-19 1982-10-26 International Business Machines Corporation Forming air-dielectric isolation regions in a monocrystalline silicon substrate by differential oxidation of polysilicon
JPH028551A (ja) * 1988-06-27 1990-01-12 Daikin Mfg Co Ltd 自動車変速機の変速段切り換え制御装置
US5213670A (en) * 1989-06-30 1993-05-25 Siemens Aktiengesellschaft Method for manufacturing a polycrystalline layer on a substrate
JP3119190B2 (ja) * 1997-01-24 2000-12-18 日本電気株式会社 半導体装置の製造方法
DE102007010563A1 (de) * 2007-02-22 2008-08-28 IHP GmbH - Innovations for High Performance Microelectronics/Institut für innovative Mikroelektronik Selektives Wachstum von polykristallinem siliziumhaltigen Halbleitermaterial auf siliziumhaltiger Halbleiteroberfläche

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1245335B (de) * 1964-06-26 1967-07-27 Siemens Ag Verfahren zur Herstellung einkristalliner, homogen bordotierter, insbesondere aus Silicium oder Germanium bestehender Aufwachsschichten auf einkristallinen Grundkoerpern
GB699545A (en) * 1966-09-08 1953-11-11 Harold Stuart Hallewell Improvements in forming means for profile grinding wheels
US3558374A (en) * 1968-01-15 1971-01-26 Ibm Polycrystalline film having controlled grain size and method of making same
US3765940A (en) * 1971-11-08 1973-10-16 Texas Instruments Inc Vacuum evaporated thin film resistors

Also Published As

Publication number Publication date
DE2430859B2 (de) 1980-12-04
FR2234921A1 (de) 1975-01-24
GB1455949A (en) 1976-11-17
JPS5029167A (de) 1975-03-25
DE2430859C3 (de) 1981-10-22
DE2430859A1 (de) 1975-01-09
FR2234921B1 (de) 1976-06-25
JPS5243066B2 (de) 1977-10-28
US3874920A (en) 1975-04-01

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