JPS5243066B2 - - Google Patents

Info

Publication number
JPS5243066B2
JPS5243066B2 JP49059420A JP5942074A JPS5243066B2 JP S5243066 B2 JPS5243066 B2 JP S5243066B2 JP 49059420 A JP49059420 A JP 49059420A JP 5942074 A JP5942074 A JP 5942074A JP S5243066 B2 JPS5243066 B2 JP S5243066B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP49059420A
Other versions
JPS5029167A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS5029167A publication Critical patent/JPS5029167A/ja
Publication of JPS5243066B2 publication Critical patent/JPS5243066B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32105—Oxidation of silicon-containing layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/934—Sheet resistance, i.e. dopant parameters

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)
  • Electrodes Of Semiconductors (AREA)
JP49059420A 1973-06-28 1974-05-28 Expired JPS5243066B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US374426A US3874920A (en) 1973-06-28 1973-06-28 Boron silicide method for making thermally oxidized boron doped poly-crystalline silicon having minimum resistivity

Publications (2)

Publication Number Publication Date
JPS5029167A JPS5029167A (ja) 1975-03-25
JPS5243066B2 true JPS5243066B2 (ja) 1977-10-28

Family

ID=23476767

Family Applications (1)

Application Number Title Priority Date Filing Date
JP49059420A Expired JPS5243066B2 (ja) 1973-06-28 1974-05-28

Country Status (6)

Country Link
US (1) US3874920A (ja)
JP (1) JPS5243066B2 (ja)
CA (1) CA1027025A (ja)
DE (1) DE2430859C3 (ja)
FR (1) FR2234921B1 (ja)
GB (1) GB1455949A (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0578708B2 (ja) * 1988-06-27 1993-10-29 Daikin Mfg Co Ltd

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1089298B (it) * 1977-01-17 1985-06-18 Mostek Corp Procedimento per fabbricare un dispositivo semiconduttore
US4381213A (en) * 1980-12-15 1983-04-26 Motorola, Inc. Partial vacuum boron diffusion process
US4356211A (en) * 1980-12-19 1982-10-26 International Business Machines Corporation Forming air-dielectric isolation regions in a monocrystalline silicon substrate by differential oxidation of polysilicon
US5213670A (en) * 1989-06-30 1993-05-25 Siemens Aktiengesellschaft Method for manufacturing a polycrystalline layer on a substrate
JP3119190B2 (ja) * 1997-01-24 2000-12-18 日本電気株式会社 半導体装置の製造方法
DE102007010563A1 (de) * 2007-02-22 2008-08-28 IHP GmbH - Innovations for High Performance Microelectronics/Institut für innovative Mikroelektronik Selektives Wachstum von polykristallinem siliziumhaltigen Halbleitermaterial auf siliziumhaltiger Halbleiteroberfläche

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1245335B (de) * 1964-06-26 1967-07-27 Siemens Ag Verfahren zur Herstellung einkristalliner, homogen bordotierter, insbesondere aus Silicium oder Germanium bestehender Aufwachsschichten auf einkristallinen Grundkoerpern
GB699545A (en) * 1966-09-08 1953-11-11 Harold Stuart Hallewell Improvements in forming means for profile grinding wheels
US3558374A (en) * 1968-01-15 1971-01-26 Ibm Polycrystalline film having controlled grain size and method of making same
US3765940A (en) * 1971-11-08 1973-10-16 Texas Instruments Inc Vacuum evaporated thin film resistors

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
SEMICONDUCTOR SILICON=1973US *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0578708B2 (ja) * 1988-06-27 1993-10-29 Daikin Mfg Co Ltd

Also Published As

Publication number Publication date
CA1027025A (en) 1978-02-28
DE2430859A1 (de) 1975-01-09
FR2234921A1 (ja) 1975-01-24
DE2430859B2 (de) 1980-12-04
US3874920A (en) 1975-04-01
FR2234921B1 (ja) 1976-06-25
DE2430859C3 (de) 1981-10-22
GB1455949A (en) 1976-11-17
JPS5029167A (ja) 1975-03-25

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