CA1023480A - Junction gate type gaas field-effect transistor and method of forming - Google Patents

Junction gate type gaas field-effect transistor and method of forming

Info

Publication number
CA1023480A
CA1023480A CA224,731A CA224731A CA1023480A CA 1023480 A CA1023480 A CA 1023480A CA 224731 A CA224731 A CA 224731A CA 1023480 A CA1023480 A CA 1023480A
Authority
CA
Canada
Prior art keywords
forming
effect transistor
gate type
type gaas
junction gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA224,731A
Other languages
English (en)
French (fr)
Other versions
CA224731S (en
Inventor
Shotaro Umebachi
Gota Kano
Morio Inoue
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Application granted granted Critical
Publication of CA1023480A publication Critical patent/CA1023480A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H01L21/30612—Etching of AIIIBV compounds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/801—FETs having heterojunction gate electrodes

Landscapes

  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
CA224,731A 1974-04-17 1975-04-16 Junction gate type gaas field-effect transistor and method of forming Expired CA1023480A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP49044324A JPS50138776A (enrdf_load_stackoverflow) 1974-04-17 1974-04-17

Publications (1)

Publication Number Publication Date
CA1023480A true CA1023480A (en) 1977-12-27

Family

ID=12688304

Family Applications (1)

Application Number Title Priority Date Filing Date
CA224,731A Expired CA1023480A (en) 1974-04-17 1975-04-16 Junction gate type gaas field-effect transistor and method of forming

Country Status (5)

Country Link
JP (1) JPS50138776A (enrdf_load_stackoverflow)
CA (1) CA1023480A (enrdf_load_stackoverflow)
DE (1) DE2517049C3 (enrdf_load_stackoverflow)
FR (1) FR2268363B1 (enrdf_load_stackoverflow)
GB (1) GB1507701A (enrdf_load_stackoverflow)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4075651A (en) * 1976-03-29 1978-02-21 Varian Associates, Inc. High speed fet employing ternary and quarternary iii-v active layers
JPS587071B2 (ja) * 1976-06-30 1983-02-08 松下電器産業株式会社 半導体装置の製造方法
JPS588151B2 (ja) * 1976-09-30 1983-02-14 松下電器産業株式会社 接合型電界効果トランジスタの製造方法
FR2452791A1 (fr) * 1979-03-28 1980-10-24 Thomson Csf Transistor a effet de champ a frequence de coupure elevee
FR2465317A2 (fr) * 1979-03-28 1981-03-20 Thomson Csf Transistor a effet de champ a frequence de coupure elevee
JPS55153377A (en) * 1979-05-18 1980-11-29 Matsushita Electronics Corp Production of semiconductor device
GB2145558A (en) * 1983-08-23 1985-03-27 Standard Telephones Cables Ltd Field effect transistor
JPS63228672A (ja) * 1987-03-18 1988-09-22 Fujitsu Ltd 化合物半導体集積回路装置

Also Published As

Publication number Publication date
DE2517049C3 (de) 1979-05-10
GB1507701A (en) 1978-04-19
FR2268363A1 (enrdf_load_stackoverflow) 1975-11-14
JPS50138776A (enrdf_load_stackoverflow) 1975-11-05
DE2517049B2 (de) 1978-09-14
DE2517049A1 (de) 1975-10-30
FR2268363B1 (enrdf_load_stackoverflow) 1978-06-23

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