JPS50138776A - - Google Patents

Info

Publication number
JPS50138776A
JPS50138776A JP49044324A JP4432474A JPS50138776A JP S50138776 A JPS50138776 A JP S50138776A JP 49044324 A JP49044324 A JP 49044324A JP 4432474 A JP4432474 A JP 4432474A JP S50138776 A JPS50138776 A JP S50138776A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP49044324A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP49044324A priority Critical patent/JPS50138776A/ja
Priority to GB15167/75A priority patent/GB1507701A/en
Priority to CA224,731A priority patent/CA1023480A/en
Priority to FR7511963A priority patent/FR2268363B1/fr
Priority to DE2517049A priority patent/DE2517049C3/de
Publication of JPS50138776A publication Critical patent/JPS50138776A/ja
Priority to US05/793,969 priority patent/US4075652A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H01L21/30612—Etching of AIIIBV compounds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/801—FETs having heterojunction gate electrodes

Landscapes

  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP49044324A 1974-04-17 1974-04-17 Pending JPS50138776A (enrdf_load_stackoverflow)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP49044324A JPS50138776A (enrdf_load_stackoverflow) 1974-04-17 1974-04-17
GB15167/75A GB1507701A (en) 1974-04-17 1975-04-14 Semiconductor devices
CA224,731A CA1023480A (en) 1974-04-17 1975-04-16 Junction gate type gaas field-effect transistor and method of forming
FR7511963A FR2268363B1 (enrdf_load_stackoverflow) 1974-04-17 1975-04-17
DE2517049A DE2517049C3 (de) 1974-04-17 1975-04-17 Sperrschicht-Feldeffekttransistor aus m-V Halbleitermaterial
US05/793,969 US4075652A (en) 1974-04-17 1977-05-05 Junction gate type gaas field-effect transistor and method of forming

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP49044324A JPS50138776A (enrdf_load_stackoverflow) 1974-04-17 1974-04-17

Publications (1)

Publication Number Publication Date
JPS50138776A true JPS50138776A (enrdf_load_stackoverflow) 1975-11-05

Family

ID=12688304

Family Applications (1)

Application Number Title Priority Date Filing Date
JP49044324A Pending JPS50138776A (enrdf_load_stackoverflow) 1974-04-17 1974-04-17

Country Status (5)

Country Link
JP (1) JPS50138776A (enrdf_load_stackoverflow)
CA (1) CA1023480A (enrdf_load_stackoverflow)
DE (1) DE2517049C3 (enrdf_load_stackoverflow)
FR (1) FR2268363B1 (enrdf_load_stackoverflow)
GB (1) GB1507701A (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS533776A (en) * 1976-06-30 1978-01-13 Matsushita Electric Ind Co Ltd Semiconducotr device and its production
JPS5342682A (en) * 1976-09-30 1978-04-18 Matsushita Electric Ind Co Ltd Junction type field effect transistor and its production
JPS60110175A (ja) * 1983-08-23 1985-06-15 アイテイ−テイ−・インダストリ−ズ・インコ−ポレ−テツド 電界効果トランジスタおよびその製造方法
JPS63228672A (ja) * 1987-03-18 1988-09-22 Fujitsu Ltd 化合物半導体集積回路装置

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4075651A (en) * 1976-03-29 1978-02-21 Varian Associates, Inc. High speed fet employing ternary and quarternary iii-v active layers
FR2452791A1 (fr) * 1979-03-28 1980-10-24 Thomson Csf Transistor a effet de champ a frequence de coupure elevee
FR2465317A2 (fr) * 1979-03-28 1981-03-20 Thomson Csf Transistor a effet de champ a frequence de coupure elevee
JPS55153377A (en) * 1979-05-18 1980-11-29 Matsushita Electronics Corp Production of semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS533776A (en) * 1976-06-30 1978-01-13 Matsushita Electric Ind Co Ltd Semiconducotr device and its production
JPS5342682A (en) * 1976-09-30 1978-04-18 Matsushita Electric Ind Co Ltd Junction type field effect transistor and its production
JPS60110175A (ja) * 1983-08-23 1985-06-15 アイテイ−テイ−・インダストリ−ズ・インコ−ポレ−テツド 電界効果トランジスタおよびその製造方法
JPS63228672A (ja) * 1987-03-18 1988-09-22 Fujitsu Ltd 化合物半導体集積回路装置

Also Published As

Publication number Publication date
FR2268363B1 (enrdf_load_stackoverflow) 1978-06-23
DE2517049A1 (de) 1975-10-30
DE2517049C3 (de) 1979-05-10
DE2517049B2 (de) 1978-09-14
CA1023480A (en) 1977-12-27
GB1507701A (en) 1978-04-19
FR2268363A1 (enrdf_load_stackoverflow) 1975-11-14

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