CA1019039A - Thin film devices having a low ohmic contact resistance - Google Patents

Thin film devices having a low ohmic contact resistance

Info

Publication number
CA1019039A
CA1019039A CA192,886A CA192886A CA1019039A CA 1019039 A CA1019039 A CA 1019039A CA 192886 A CA192886 A CA 192886A CA 1019039 A CA1019039 A CA 1019039A
Authority
CA
Canada
Prior art keywords
thin film
contact resistance
ohmic contact
film devices
low ohmic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA192,886A
Other languages
English (en)
French (fr)
Other versions
CA192886S (en
Inventor
Michael Leitner
H. Keith Eastwood
Marcus Arts
Barry A. Noval
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Multi State Devices Ltd
Original Assignee
Multi State Devices Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Multi State Devices Ltd filed Critical Multi State Devices Ltd
Application granted granted Critical
Publication of CA1019039A publication Critical patent/CA1019039A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/04—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient
    • H01C7/041—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient formed as one or more layers or coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/04—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient
    • H01C7/042—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient mainly consisting of inorganic non-metallic substances
    • H01C7/043—Oxides or oxidic compounds
    • H01C7/047—Vanadium oxides or oxidic compounds, e.g. VOx
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/15—Ceramic or glass substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Thermistors And Varistors (AREA)
  • Manufacture Of Switches (AREA)
  • Physical Vapour Deposition (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)
  • Non-Adjustable Resistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
CA192,886A 1973-02-26 1974-02-19 Thin film devices having a low ohmic contact resistance Expired CA1019039A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US335651A US3886578A (en) 1973-02-26 1973-02-26 Low ohmic resistance platinum contacts for vanadium oxide thin film devices

Publications (1)

Publication Number Publication Date
CA1019039A true CA1019039A (en) 1977-10-11

Family

ID=23312698

Family Applications (1)

Application Number Title Priority Date Filing Date
CA192,886A Expired CA1019039A (en) 1973-02-26 1974-02-19 Thin film devices having a low ohmic contact resistance

Country Status (10)

Country Link
US (1) US3886578A (enExample)
JP (1) JPS5529562B2 (enExample)
AU (1) AU465334B2 (enExample)
BE (1) BE811337A (enExample)
CA (1) CA1019039A (enExample)
DE (1) DE2402709C3 (enExample)
FR (1) FR2219606B1 (enExample)
GB (1) GB1408122A (enExample)
NL (1) NL7401619A (enExample)
SE (1) SE387038B (enExample)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2311410A1 (fr) * 1975-05-13 1976-12-10 Thomson Csf Circuit de commutation integre, matrice de commutation et circuits logiques utilisant ledit circuit
FR2318442A1 (fr) * 1975-07-15 1977-02-11 Kodak Pathe Nouveau produit, notamment, photographique, a couche antistatique et procede pour sa preparation
US4025793A (en) * 1975-10-20 1977-05-24 Santa Barbara Research Center Radiation detector with improved electrical interconnections
US4168343A (en) * 1976-03-11 1979-09-18 Matsushita Electric Industrial Co., Ltd. Thermal printing head
US4087778A (en) * 1976-04-05 1978-05-02 Trw Inc. Termination for electrical resistor and method of making the same
DE2952161A1 (de) * 1979-12-22 1981-06-25 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Duennfilmschaltung
JPS5817649A (ja) * 1981-07-24 1983-02-01 Fujitsu Ltd 電子部品パツケ−ジ
US4772935A (en) * 1984-12-19 1988-09-20 Fairchild Semiconductor Corporation Die bonding process
EP0330210A3 (en) * 1988-02-26 1990-11-07 Gould Electronics Inc. Resistive metal layers and method for making same
KR0133730B1 (ko) * 1988-11-21 1998-04-23 Pulse Microwave M 링 쿼드에 있어서 쇼트키-배리어 다이오드 용 빔리드
US5280194A (en) * 1988-11-21 1994-01-18 Micro Technology Partners Electrical apparatus with a metallic layer coupled to a lower region of a substrate and metallic layer coupled to a lower region of a semiconductor device
US5521420A (en) * 1992-05-27 1996-05-28 Micro Technology Partners Fabricating a semiconductor with an insulative coating
US5403729A (en) * 1992-05-27 1995-04-04 Micro Technology Partners Fabricating a semiconductor with an insulative coating
US5656547A (en) * 1994-05-11 1997-08-12 Chipscale, Inc. Method for making a leadless surface mounted device with wrap-around flange interface contacts
KR100358446B1 (ko) * 1994-06-09 2003-01-29 칩스케일 인코포레이티드 저항기제조방법
US5672913A (en) * 1995-02-23 1997-09-30 Lucent Technologies Inc. Semiconductor device having a layer of gallium amalgam on bump leads
US5801383A (en) * 1995-11-22 1998-09-01 Masahiro Ota, Director General, Technical Research And Development Institute, Japan Defense Agency VOX film, wherein X is greater than 1.875 and less than 2.0, and a bolometer-type infrared sensor comprising the VOX film
DE10045195B4 (de) * 1999-09-22 2008-04-10 Epcos Ag Thermistor und Verfahren zu dessen Herstellung
EP1261241A1 (en) * 2001-05-17 2002-11-27 Shipley Co. L.L.C. Resistor and printed wiring board embedding those resistor
WO2003046265A2 (en) * 2001-11-26 2003-06-05 Massachusetts Institute Of Technology Thick porous anodic alumina films and nanowire arrays grown on a solid substrate
KR100734830B1 (ko) * 2005-01-14 2007-07-03 한국전자통신연구원 전하방전수단을 포함하는 리튬 2차전지
US8228159B1 (en) 2007-10-19 2012-07-24 University Of Central Florida Research Foundation, Inc. Nanocomposite semiconducting material with reduced resistivity
DE102011056951A1 (de) * 2011-12-22 2013-06-27 Helmholtz-Zentrum Dresden - Rossendorf E.V. Thermochromes Einzel- und Mehrkomponentensystem, dessen Herstellung und Verwendung
JP6392487B2 (ja) * 2016-10-07 2018-09-19 Ｓｅｍｉｔｅｃ株式会社 溶接用電子部品、実装基板及び温度センサ
US11460353B2 (en) * 2017-05-01 2022-10-04 Semitec Corporation Temperature sensor and device equipped with temperature sensor
CN108495485A (zh) * 2018-04-09 2018-09-04 陈长生 一种多层印制板嵌入电阻制作方法
JP6842600B2 (ja) * 2018-08-10 2021-03-17 Ｓｅｍｉｔｅｃ株式会社 温度センサ及び温度センサを備えた装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1116352A (en) * 1964-07-28 1968-06-06 Hitachi Ltd A resistor having an abruptly changing negative temperature coefficient
GB1113686A (en) * 1964-10-23 1968-05-15 Ass Elect Ind Improvements in or relating to tantalum thin film electrical components
US3560256A (en) * 1966-10-06 1971-02-02 Western Electric Co Combined thick and thin film circuits
US3562040A (en) * 1967-05-03 1971-02-09 Itt Method of uniformally and rapidly etching nichrome
US3483110A (en) * 1967-05-19 1969-12-09 Bell Telephone Labor Inc Preparation of thin films of vanadium dioxide
US3616348A (en) * 1968-06-10 1971-10-26 Rca Corp Process for isolating semiconductor elements
US3614480A (en) * 1969-10-13 1971-10-19 Bell Telephone Labor Inc Temperature-stabilized electronic devices
US3667008A (en) * 1970-10-29 1972-05-30 Rca Corp Semiconductor device employing two-metal contact and polycrystalline isolation means

Also Published As

Publication number Publication date
DE2402709A1 (de) 1974-09-05
FR2219606B1 (enExample) 1979-01-05
GB1408122A (en) 1975-10-01
FR2219606A1 (enExample) 1974-09-20
AU465334B2 (en) 1975-09-25
US3886578A (en) 1975-05-27
NL7401619A (enExample) 1974-08-28
DE2402709B2 (de) 1977-11-03
SE387038B (sv) 1976-08-23
JPS5529562B2 (enExample) 1980-08-05
JPS49117959A (enExample) 1974-11-11
AU6486474A (en) 1975-08-21
BE811337A (fr) 1974-06-17
DE2402709C3 (de) 1978-06-29

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