CA1018439A - Method of manufacturing a monocrystalline substrate body - Google Patents

Method of manufacturing a monocrystalline substrate body

Info

Publication number
CA1018439A
CA1018439A CA175,890A CA175890A CA1018439A CA 1018439 A CA1018439 A CA 1018439A CA 175890 A CA175890 A CA 175890A CA 1018439 A CA1018439 A CA 1018439A
Authority
CA
Canada
Prior art keywords
manufacturing
substrate body
monocrystalline substrate
monocrystalline
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA175,890A
Other languages
English (en)
Other versions
CA175890S (en
Inventor
Martinus J.G. Van Hout
John M. Robertson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Application granted granted Critical
Publication of CA1018439A publication Critical patent/CA1018439A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/12—Liquid-phase epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/02—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/28—Complex oxides with formula A3Me5O12 wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co or Al, e.g. garnets

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Thin Magnetic Films (AREA)
CA175,890A 1972-07-14 1973-07-06 Method of manufacturing a monocrystalline substrate body Expired CA1018439A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7209744A NL7209744A (fr) 1972-07-14 1972-07-14

Publications (1)

Publication Number Publication Date
CA1018439A true CA1018439A (en) 1977-10-04

Family

ID=19816516

Family Applications (1)

Application Number Title Priority Date Filing Date
CA175,890A Expired CA1018439A (en) 1972-07-14 1973-07-06 Method of manufacturing a monocrystalline substrate body

Country Status (8)

Country Link
JP (1) JPS4964576A (fr)
CA (1) CA1018439A (fr)
DE (1) DE2332036C3 (fr)
FR (1) FR2192869B1 (fr)
GB (1) GB1432686A (fr)
IT (1) IT989842B (fr)
NL (1) NL7209744A (fr)
SE (1) SE7608675L (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4310612C1 (de) * 1993-03-31 1994-11-10 Max Planck Gesellschaft Flüssigphasen-Heteroepitaxieverfahren

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE754519A (fr) * 1969-08-06 1971-02-08 Motorola Inc Procede et appareil pour la croissance de couches epitaxiales en phase liquide sur des semi-conducteurs

Also Published As

Publication number Publication date
FR2192869A1 (fr) 1974-02-15
DE2332036A1 (de) 1974-01-31
DE2332036B2 (de) 1978-09-07
DE2332036C3 (de) 1980-07-03
JPS4964576A (fr) 1974-06-22
FR2192869B1 (fr) 1977-05-13
GB1432686A (en) 1976-04-22
SE7608675L (sv) 1976-08-02
IT989842B (it) 1975-06-10
NL7209744A (fr) 1974-01-16

Similar Documents

Publication Publication Date Title
CA998517A (en) Method of making a connection
CA998521A (en) Method of manufacturing cylindrical blanks
CA975154A (en) Method of manufacturing a polycrystalline ferrite body
CA988628A (en) Method of etching a semiconductor element
CA985603A (en) Method of making a single crystal intermetallic compound semiconductor
CA1020494A (fr) Methode de fabrication de patrons graves a l'eau forte
CA991319A (en) Method of manufacturing a device comprising a semiconductor body
CA1011192A (en) Method of making a multialkali electron-emissive layer
CA992299A (en) Method of manufacturing a radiator and radiator manufactured by said method
CA930075A (en) Method of manufacturing a semiconductor body
AU465833B2 (en) A method of preparing d-penicillamine
CA1018439A (en) Method of manufacturing a monocrystalline substrate body
CA971680A (en) Method of making a transducer
AU5964273A (en) Method of manufacturing a thermocompression contact
CA1032397A (fr) Methode de fabrication d'un dispositif
CA1009445A (en) Method of making a transducer
CA984577A (en) Method of manufacturing a cathodo-chromic sodalite
CA980918A (en) Method of forming a nickel electrode on a silicon substrate
CA895251A (en) Method of making a single crystal semiconductor
AU467483B2 (en) PRODUCTION OF DIAMINO-c C a DIANTHRAQUINONYLS
CA1007040A (en) Method of manufacturing a sealed contact
CA913807A (en) Method of producing a semiconductor
CA902944A (en) Method of manufacturing a surface soil
CA896190A (en) Method of manufacturing a semiconductor device
CA913799A (en) Methods of manufacturing a semiconductor device