CA1003939A - Photosensitive semiconductor device - Google Patents

Photosensitive semiconductor device

Info

Publication number
CA1003939A
CA1003939A CA172,610A CA172610A CA1003939A CA 1003939 A CA1003939 A CA 1003939A CA 172610 A CA172610 A CA 172610A CA 1003939 A CA1003939 A CA 1003939A
Authority
CA
Canada
Prior art keywords
semiconductor device
photosensitive semiconductor
photosensitive
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA172,610A
Other languages
English (en)
Other versions
CA172610S (en
Inventor
Gerard Gimine
Christian Gouin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Application granted granted Critical
Publication of CA1003939A publication Critical patent/CA1003939A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)
  • Electrodes Of Semiconductors (AREA)
CA172,610A 1972-06-02 1973-05-29 Photosensitive semiconductor device Expired CA1003939A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7219924A FR2188267B1 (cs) 1972-06-02 1972-06-02

Publications (1)

Publication Number Publication Date
CA1003939A true CA1003939A (en) 1977-01-18

Family

ID=9099609

Family Applications (1)

Application Number Title Priority Date Filing Date
CA172,610A Expired CA1003939A (en) 1972-06-02 1973-05-29 Photosensitive semiconductor device

Country Status (7)

Country Link
JP (1) JPS5149196B2 (cs)
CA (1) CA1003939A (cs)
DE (1) DE2327480A1 (cs)
FR (1) FR2188267B1 (cs)
GB (1) GB1431572A (cs)
IT (1) IT986390B (cs)
NL (1) NL7307377A (cs)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5927193B2 (ja) * 1976-11-19 1984-07-04 松下電器産業株式会社 電動機の速度制御装置
GB2125217B (en) * 1982-08-06 1986-01-02 Secr Defence Infra red detector arrays
MD4182C1 (ro) * 2011-04-15 2013-04-30 Государственный Университет Молд0 Dispozitiv semiconductor cu joncţiune p-n în relief (variante)
MD4261B1 (ro) * 2011-05-12 2013-11-30 Государственный Университет Молд0 Procedeu de fabricare a dispozitivului semiconductor cu joncţiune p-n în relief (variante)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3436613A (en) * 1965-12-29 1969-04-01 Gen Electric High gain silicon photodetector

Also Published As

Publication number Publication date
JPS5149196B2 (cs) 1976-12-24
FR2188267B1 (cs) 1976-03-12
DE2327480A1 (de) 1973-12-13
JPS4944688A (cs) 1974-04-26
GB1431572A (en) 1976-04-07
IT986390B (it) 1975-01-30
NL7307377A (cs) 1973-12-04
FR2188267A1 (cs) 1974-01-18

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