BRPI1008307A2 - dispositivo de recepção de luz transparente de múltiplas camadas, e, dispositivo eletrônico - Google Patents

dispositivo de recepção de luz transparente de múltiplas camadas, e, dispositivo eletrônico

Info

Publication number
BRPI1008307A2
BRPI1008307A2 BRPI1008307A BRPI1008307A BRPI1008307A2 BR PI1008307 A2 BRPI1008307 A2 BR PI1008307A2 BR PI1008307 A BRPI1008307 A BR PI1008307A BR PI1008307 A BRPI1008307 A BR PI1008307A BR PI1008307 A2 BRPI1008307 A2 BR PI1008307A2
Authority
BR
Brazil
Prior art keywords
light receiving
transparent light
electronic device
multilayer transparent
receiving device
Prior art date
Application number
BRPI1008307A
Other languages
English (en)
Portuguese (pt)
Inventor
Seiji Yamada
Wei Luo
Yoshio Goto
Yuichi Tokita
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of BRPI1008307A2 publication Critical patent/BRPI1008307A2/pt

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07KPEPTIDES
    • C07K17/00Carrier-bound or immobilised peptides; Preparation thereof
    • C07K17/02Peptides being immobilised on, or in, an organic carrier
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07KPEPTIDES
    • C07K17/00Carrier-bound or immobilised peptides; Preparation thereof
    • C07K17/14Peptides being immobilised on, or in, an inorganic carrier
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/20Light-sensitive devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/50Photovoltaic [PV] devices
    • H10K30/57Photovoltaic [PV] devices comprising multiple junctions, e.g. tandem PV cells
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/761Biomolecules or bio-macromolecules, e.g. proteins, chlorophyl, lipids or enzymes
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/549Organic PV cells

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biochemistry (AREA)
  • Biophysics (AREA)
  • General Health & Medical Sciences (AREA)
  • Molecular Biology (AREA)
  • Electromagnetism (AREA)
  • Nanotechnology (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Genetics & Genomics (AREA)
  • Medicinal Chemistry (AREA)
  • Proteomics, Peptides & Aminoacids (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Peptides Or Proteins (AREA)
BRPI1008307A 2009-11-04 2010-10-28 dispositivo de recepção de luz transparente de múltiplas camadas, e, dispositivo eletrônico BRPI1008307A2 (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2009252778A JP2011100759A (ja) 2009-11-04 2009-11-04 多層透明受光素子および電子機器
PCT/JP2010/069197 WO2011055682A1 (ja) 2009-11-04 2010-10-28 多層透明受光素子および電子機器

Publications (1)

Publication Number Publication Date
BRPI1008307A2 true BRPI1008307A2 (pt) 2016-02-23

Family

ID=43969922

Family Applications (1)

Application Number Title Priority Date Filing Date
BRPI1008307A BRPI1008307A2 (pt) 2009-11-04 2010-10-28 dispositivo de recepção de luz transparente de múltiplas camadas, e, dispositivo eletrônico

Country Status (7)

Country Link
US (1) US20120141831A1 (de)
EP (1) EP2498302A4 (de)
JP (1) JP2011100759A (de)
KR (1) KR20120088534A (de)
CN (1) CN102341920B (de)
BR (1) BRPI1008307A2 (de)
WO (1) WO2011055682A1 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5444747B2 (ja) * 2009-02-17 2014-03-19 ソニー株式会社 カラー撮像素子およびその製造方法ならびに光センサーおよびその製造方法ならびに光電変換素子およびその製造方法ならびに電子機器
JP5195693B2 (ja) * 2009-08-28 2013-05-08 ソニー株式会社 タンパク質光電変換素子
JP6550673B2 (ja) * 2015-04-03 2019-07-31 国立大学法人 東京大学 フォトルミネセンス寿命測定装置及び測定方法
KR101962030B1 (ko) * 2017-09-20 2019-07-17 성균관대학교산학협력단 단백질 기반의 비휘발성 메모리 소자 및 이의 제조 방법

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0748567B2 (ja) * 1987-03-26 1995-05-24 三菱電機株式会社 光応答性スイツチ素子
JPH0612815B2 (ja) * 1989-04-24 1994-02-16 工業技術院長 機能性蛋白質複合体を用いた光電変換素子の製造方法
JP5369366B2 (ja) * 2006-02-16 2013-12-18 ソニー株式会社 光電変換素子、半導体装置および電子機器
JP2009021501A (ja) * 2007-07-13 2009-01-29 Sony Corp 分子素子、単分子光スイッチ素子、機能素子、分子ワイヤーおよび電子機器
JP5233650B2 (ja) * 2008-12-18 2013-07-10 ソニー株式会社 タンパク質固定化電極およびその製造方法ならびに機能素子およびその製造方法
JP5195693B2 (ja) * 2009-08-28 2013-05-08 ソニー株式会社 タンパク質光電変換素子

Also Published As

Publication number Publication date
CN102341920A (zh) 2012-02-01
US20120141831A1 (en) 2012-06-07
CN102341920B (zh) 2014-01-15
KR20120088534A (ko) 2012-08-08
WO2011055682A1 (ja) 2011-05-12
EP2498302A4 (de) 2013-03-27
EP2498302A1 (de) 2012-09-12
JP2011100759A (ja) 2011-05-19

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Legal Events

Date Code Title Description
B08F Application dismissed because of non-payment of annual fees [chapter 8.6 patent gazette]

Free format text: REFERENTE AS 5A E 6A ANUIDADES.

B08K Patent lapsed as no evidence of payment of the annual fee has been furnished to inpi [chapter 8.11 patent gazette]

Free format text: EM VIRTUDE DO ARQUIVAMENTO PUBLICADO NA RPI 2384 DE 13-09-2016 E CONSIDERANDO AUSENCIA DE MANIFESTACAO DENTRO DOS PRAZOS LEGAIS, INFORMO QUE CABE SER MANTIDO O ARQUIVAMENTO DO PEDIDO DE PATENTE, CONFORME O DISPOSTO NO ARTIGO 12, DA RESOLUCAO 113/2013.