BRPI0906628A2 - Sistema para processar peças a serem trabalhadas - Google Patents

Sistema para processar peças a serem trabalhadas

Info

Publication number
BRPI0906628A2
BRPI0906628A2 BRPI0906628-4A BRPI0906628A BRPI0906628A2 BR PI0906628 A2 BRPI0906628 A2 BR PI0906628A2 BR PI0906628 A BRPI0906628 A BR PI0906628A BR PI0906628 A2 BRPI0906628 A2 BR PI0906628A2
Authority
BR
Brazil
Prior art keywords
worked
processing parts
parts
processing
Prior art date
Application number
BRPI0906628-4A
Other languages
English (en)
Inventor
Chunwah Fan
Original Assignee
Dongguan Anwell Digital Mach
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/968,188 external-priority patent/US20090169341A1/en
Application filed by Dongguan Anwell Digital Mach filed Critical Dongguan Anwell Digital Mach
Publication of BRPI0906628A2 publication Critical patent/BRPI0906628A2/pt

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54Apparatus specially adapted for continuous coating
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563Gas nozzles
    • C23C16/45565Shower nozzles
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582Rigid and flat substrates, e.g. plates or discs
    • C23C16/4587Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
BRPI0906628-4A 2008-01-01 2009-01-04 Sistema para processar peças a serem trabalhadas BRPI0906628A2 (pt)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/968,188 US20090169341A1 (en) 2008-01-01 2008-01-01 Method and system for handling objects in chambers
US12/118,685 US20090165714A1 (en) 2008-01-01 2008-05-10 Method and system for processing substrates in chambers
PCT/CN2009/070004 WO2009082985A1 (fr) 2008-01-01 2009-01-04 Système et procédé de traitement de substrat dans une chambre

Publications (1)

Publication Number Publication Date
BRPI0906628A2 true BRPI0906628A2 (pt) 2015-07-14

Family

ID=40796580

Family Applications (1)

Application Number Title Priority Date Filing Date
BRPI0906628-4A BRPI0906628A2 (pt) 2008-01-01 2009-01-04 Sistema para processar peças a serem trabalhadas

Country Status (8)

Country Link
US (1) US20090165714A1 (pt)
EP (1) EP2234143A4 (pt)
CN (1) CN101960562B (pt)
AU (1) AU2009203106B2 (pt)
BR (1) BRPI0906628A2 (pt)
IN (1) IN2010CN04057A (pt)
TW (1) TWI386515B (pt)
WO (1) WO2009082985A1 (pt)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101288129B1 (ko) * 2011-07-13 2013-07-19 삼성디스플레이 주식회사 기상 증착 장치, 기상 증착 방법 및 유기 발광 표시 장치 제조 방법
HUP1100436A2 (en) * 2011-08-15 2013-02-28 Ecosolifer Ag Gas flow system for using in reaction chamber
WO2014064779A1 (ja) * 2012-10-24 2014-05-01 株式会社Jcu プラズマ処理装置及び方法
CN103022272A (zh) * 2012-12-22 2013-04-03 蚌埠玻璃工业设计研究院 一种制备非晶硅/非晶锗硅叠层太阳能电池薄膜的装置
CN107710423B (zh) * 2015-07-15 2021-01-12 瓦里安半导体设备公司 处理工件的方法
CN108048818A (zh) * 2017-12-18 2018-05-18 德淮半导体有限公司 化学气相沉积装置及其使用方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4289598A (en) * 1980-05-03 1981-09-15 Technics, Inc. Plasma reactor and method therefor
US4991542A (en) * 1987-10-14 1991-02-12 The Furukawa Electric Co., Ltd. Method of forming a thin film by plasma CVD and apapratus for forming a thin film
JPH08148451A (ja) * 1994-11-18 1996-06-07 Komatsu Electron Metals Co Ltd 半導体ウェーハ自動剥し装置
JP3732250B2 (ja) * 1995-03-30 2006-01-05 キヤノンアネルバ株式会社 インライン式成膜装置
JP3582330B2 (ja) * 1997-11-14 2004-10-27 東京エレクトロン株式会社 処理装置及びこれを用いた処理システム
JP4089113B2 (ja) * 1999-12-28 2008-05-28 株式会社Ihi 薄膜作成装置
JP2001319885A (ja) * 2000-03-02 2001-11-16 Hitachi Kokusai Electric Inc 基板処理装置及び半導体製造方法
JP3897582B2 (ja) * 2000-12-12 2007-03-28 キヤノン株式会社 真空処理方法、真空処理装置、半導体装置の製造方法および半導体装置
JP3970815B2 (ja) * 2002-11-12 2007-09-05 シャープ株式会社 半導体素子製造装置
CN100431102C (zh) * 2003-05-02 2008-11-05 石川岛播磨重工业株式会社 真空成膜装置和真空成膜方法以及太阳电池材料
WO2005045873A2 (en) * 2003-10-28 2005-05-19 Nordson Corporation Plasma processing system and plasma treatment process
JP2008184666A (ja) * 2007-01-30 2008-08-14 Phyzchemix Corp 成膜装置

Also Published As

Publication number Publication date
CN101960562B (zh) 2012-07-25
AU2009203106B2 (en) 2012-01-12
CN101960562A (zh) 2011-01-26
AU2009203106A1 (en) 2009-07-09
TW200930833A (en) 2009-07-16
IN2010CN04057A (pt) 2015-06-19
WO2009082985A1 (fr) 2009-07-09
US20090165714A1 (en) 2009-07-02
TWI386515B (zh) 2013-02-21
EP2234143A4 (en) 2013-04-03
EP2234143A1 (en) 2010-09-29

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Legal Events

Date Code Title Description
B08F Application dismissed because of non-payment of annual fees [chapter 8.6 patent gazette]

Free format text: REFERENTE A 6A ANUIDADE

B08K Patent lapsed as no evidence of payment of the annual fee has been furnished to inpi [chapter 8.11 patent gazette]

Free format text: EM VIRTUDE DO ARQUIVAMENTO PUBLICADO NA RPI 2325 DE 28-07-2015 E CONSIDERANDO AUSENCIA DE MANIFESTACAO DENTRO DOS PRAZOS LEGAIS, INFORMO QUE CABE SER MANTIDO O ARQUIVAMENTO DO PEDIDO DE PATENTE, CONFORME O DISPOSTO NO ARTIGO 12, DA RESOLUCAO 113/2013.