CN101960562A - 在腔室中处理基片的方法及系统 - Google Patents

在腔室中处理基片的方法及系统 Download PDF

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Publication number
CN101960562A
CN101960562A CN2009801013970A CN200980101397A CN101960562A CN 101960562 A CN101960562 A CN 101960562A CN 2009801013970 A CN2009801013970 A CN 2009801013970A CN 200980101397 A CN200980101397 A CN 200980101397A CN 101960562 A CN101960562 A CN 101960562A
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CN
China
Prior art keywords
chamber
workpiece
precipitation equipment
chemical
jet tray
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN2009801013970A
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English (en)
Other versions
CN101960562B (zh
Inventor
范振华
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dongguan Anwell Digital Machinery Co Ltd
Original Assignee
Dongguan Hongwei Film Vacuum Technology Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/968,188 external-priority patent/US20090169341A1/en
Application filed by Dongguan Hongwei Film Vacuum Technology Co ltd filed Critical Dongguan Hongwei Film Vacuum Technology Co ltd
Publication of CN101960562A publication Critical patent/CN101960562A/zh
Application granted granted Critical
Publication of CN101960562B publication Critical patent/CN101960562B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4587—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

一种基片处理系统，包括工艺腔室(900)、具有夹持多个工件(901)的夹具(902)的平台、多个加热器(906)和多个沉积装置(904)。该工艺腔室(900)包括用于接收至少一种化学物质的开口(910)和用于释放残余物的出口(903)。所述出口(903)与工艺泵(943)相连。该夹具(902)用于持有工件(901)。每个加热器(906)设于两个工件(901)之间。每个沉积装置(904)设于两个工件(901)之间。每个工件(901)设于加热器(906)和沉积装置(904)之间。每个沉积装置(904)包括至少两个设有孔的喷射板(908)，化学物质可通过所述两个喷射板(908)喷射到工件(901)上。

Description

PCT国内申请，说明书已公开。

Claims (1)

  1. PCT国内申请，权利要求书已公开。
CN2009801013970A 2008-01-01 2009-01-04 在腔室中处理基片的系统 Expired - Fee Related CN101960562B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US11/968,188 2008-01-01
US11/968,188 US20090169341A1 (en) 2008-01-01 2008-01-01 Method and system for handling objects in chambers
US12/118,685 US20090165714A1 (en) 2008-01-01 2008-05-10 Method and system for processing substrates in chambers
US12/118,685 2008-05-10
PCT/CN2009/070004 WO2009082985A1 (fr) 2008-01-01 2009-01-04 Système et procédé de traitement de substrat dans une chambre

Publications (2)

Publication Number Publication Date
CN101960562A true CN101960562A (zh) 2011-01-26
CN101960562B CN101960562B (zh) 2012-07-25

Family

ID=40796580

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2009801013970A Expired - Fee Related CN101960562B (zh) 2008-01-01 2009-01-04 在腔室中处理基片的系统

Country Status (8)

Country Link
US (1) US20090165714A1 (zh)
EP (1) EP2234143A4 (zh)
CN (1) CN101960562B (zh)
AU (1) AU2009203106B2 (zh)
BR (1) BRPI0906628A2 (zh)
IN (1) IN2010CN04057A (zh)
TW (1) TWI386515B (zh)
WO (1) WO2009082985A1 (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102881548A (zh) * 2011-07-13 2013-01-16 三星显示有限公司 气相沉积装置和方法以及制造有机发光显示装置的方法
CN107710423A (zh) * 2015-07-15 2018-02-16 瓦里安半导体设备公司 处理工件的方法与装置

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
HUP1100436A2 (en) * 2011-08-15 2013-02-28 Ecosolifer Ag Gas flow system for using in reaction chamber
WO2014064779A1 (ja) * 2012-10-24 2014-05-01 株式会社Ｊｃｕ プラズマ処理装置及び方法
CN103022272A (zh) * 2012-12-22 2013-04-03 蚌埠玻璃工业设计研究院 一种制备非晶硅/非晶锗硅叠层太阳能电池薄膜的装置
CN108048818A (zh) * 2017-12-18 2018-05-18 德淮半导体有限公司 化学气相沉积装置及其使用方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4289598A (en) * 1980-05-03 1981-09-15 Technics, Inc. Plasma reactor and method therefor
US4991542A (en) * 1987-10-14 1991-02-12 The Furukawa Electric Co., Ltd. Method of forming a thin film by plasma CVD and apapratus for forming a thin film
JPH08148451A (ja) * 1994-11-18 1996-06-07 Komatsu Electron Metals Co Ltd 半導体ウェーハ自動剥し装置
JP3732250B2 (ja) * 1995-03-30 2006-01-05 キヤノンアネルバ株式会社 インライン式成膜装置
JP3582330B2 (ja) * 1997-11-14 2004-10-27 東京エレクトロン株式会社 処理装置及びこれを用いた処理システム
JP4089113B2 (ja) * 1999-12-28 2008-05-28 株式会社Ｉｈｉ 薄膜作成装置
JP2001319885A (ja) * 2000-03-02 2001-11-16 Hitachi Kokusai Electric Inc 基板処理装置及び半導体製造方法
JP3897582B2 (ja) * 2000-12-12 2007-03-28 キヤノン株式会社 真空処理方法、真空処理装置、半導体装置の製造方法および半導体装置
JP3970815B2 (ja) * 2002-11-12 2007-09-05 シャープ株式会社 半導体素子製造装置
CN100431102C (zh) * 2003-05-02 2008-11-05 石川岛播磨重工业株式会社 真空成膜装置和真空成膜方法以及太阳电池材料
CN1875454A (zh) * 2003-10-28 2006-12-06 诺信公司 等离子处理系统和等离子处理工艺
JP2008184666A (ja) * 2007-01-30 2008-08-14 Phyzchemix Corp 成膜装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102881548A (zh) * 2011-07-13 2013-01-16 三星显示有限公司 气相沉积装置和方法以及制造有机发光显示装置的方法
CN102881548B (zh) * 2011-07-13 2016-12-07 三星显示有限公司 气相沉积装置和方法以及制造有机发光显示装置的方法
CN107710423A (zh) * 2015-07-15 2018-02-16 瓦里安半导体设备公司 处理工件的方法与装置

Also Published As

Publication number Publication date
EP2234143A4 (en) 2013-04-03
IN2010CN04057A (zh) 2015-06-19
US20090165714A1 (en) 2009-07-02
WO2009082985A1 (fr) 2009-07-09
BRPI0906628A2 (pt) 2015-07-14
EP2234143A1 (en) 2010-09-29
TW200930833A (en) 2009-07-16
AU2009203106A1 (en) 2009-07-09
TWI386515B (zh) 2013-02-21
CN101960562B (zh) 2012-07-25
AU2009203106B2 (en) 2012-01-12

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C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
ASS Succession or assignment of patent right

Owner name: DONGGUAN ANWELL THIN FILM AND VACUUM TECHNOLOGY CO

Free format text: FORMER OWNER: DONGGUAN HONGWEI DIGITAL MACHINERY CO., LTD.

Effective date: 20111010

C41 Transfer of patent application or patent right or utility model
TA01 Transfer of patent application right

Effective date of registration: 20111010

Address after: 523081, Guangdong City, Dongguan Province grand ambitious hi tech Development Zone

Applicant after: Anwell Technologies Limited

Address before: 523081, 6, Dalong Road, Shigu village, Nancheng District, Dongguan, Guangdong, China

Applicant before: Dongguan Hongwei Digital Machinery Co., Ltd.

C14 Grant of patent or utility model
GR01 Patent grant
C17 Cessation of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20120725

Termination date: 20140104