BRPI0417480A - dispositivo de memória, processo de armazenamento de informação, processo, e material estruturado - Google Patents

dispositivo de memória, processo de armazenamento de informação, processo, e material estruturado

Info

Publication number
BRPI0417480A
BRPI0417480A BRPI0417480-1A BRPI0417480A BRPI0417480A BR PI0417480 A BRPI0417480 A BR PI0417480A BR PI0417480 A BRPI0417480 A BR PI0417480A BR PI0417480 A BRPI0417480 A BR PI0417480A
Authority
BR
Brazil
Prior art keywords
memory device
cells
structured material
regions
pressure
Prior art date
Application number
BRPI0417480-1A
Other languages
English (en)
Inventor
James Stanislav Williams
Jodie Elisabeth Bradby
Michael Vincent Swain
Original Assignee
Wriota Pty Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from AU2003906808A external-priority patent/AU2003906808A0/en
Application filed by Wriota Pty Ltd filed Critical Wriota Pty Ltd
Publication of BRPI0417480A publication Critical patent/BRPI0417480A/pt

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
    • G11B9/12—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor
    • G11B9/14—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor using microscopic probe means, i.e. recording or reproducing by means directly associated with the tip of a microscopic electrical probe as used in Scanning Tunneling Microscopy [STM] or Atomic Force Microscopy [AFM] for inducing physical or electrical perturbations in a recording medium; Record carriers or media specially adapted for such transducing of information
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
    • G11B9/12—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor
    • G11B9/14—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor using microscopic probe means, i.e. recording or reproducing by means directly associated with the tip of a microscopic electrical probe as used in Scanning Tunneling Microscopy [STM] or Atomic Force Microscopy [AFM] for inducing physical or electrical perturbations in a recording medium; Record carriers or media specially adapted for such transducing of information
    • G11B9/1409—Heads
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
    • G11B9/12—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor
    • G11B9/14—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor using microscopic probe means, i.e. recording or reproducing by means directly associated with the tip of a microscopic electrical probe as used in Scanning Tunneling Microscopy [STM] or Atomic Force Microscopy [AFM] for inducing physical or electrical perturbations in a recording medium; Record carriers or media specially adapted for such transducing of information
    • G11B9/1418—Disposition or mounting of heads or record carriers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
    • G11B9/12—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor
    • G11B9/14—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor using microscopic probe means, i.e. recording or reproducing by means directly associated with the tip of a microscopic electrical probe as used in Scanning Tunneling Microscopy [STM] or Atomic Force Microscopy [AFM] for inducing physical or electrical perturbations in a recording medium; Record carriers or media specially adapted for such transducing of information
    • G11B9/1418—Disposition or mounting of heads or record carriers
    • G11B9/1427—Disposition or mounting of heads or record carriers with provision for moving the heads or record carriers relatively to each other or for access to indexed parts without effectively imparting a relative movement
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
    • G11B9/12—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor
    • G11B9/14—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor using microscopic probe means, i.e. recording or reproducing by means directly associated with the tip of a microscopic electrical probe as used in Scanning Tunneling Microscopy [STM] or Atomic Force Microscopy [AFM] for inducing physical or electrical perturbations in a recording medium; Record carriers or media specially adapted for such transducing of information
    • G11B9/1418—Disposition or mounting of heads or record carriers
    • G11B9/1427—Disposition or mounting of heads or record carriers with provision for moving the heads or record carriers relatively to each other or for access to indexed parts without effectively imparting a relative movement
    • G11B9/1436—Disposition or mounting of heads or record carriers with provision for moving the heads or record carriers relatively to each other or for access to indexed parts without effectively imparting a relative movement with provision for moving the heads or record carriers relatively to each other
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
    • G11B9/12—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor
    • G11B9/14—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor using microscopic probe means, i.e. recording or reproducing by means directly associated with the tip of a microscopic electrical probe as used in Scanning Tunneling Microscopy [STM] or Atomic Force Microscopy [AFM] for inducing physical or electrical perturbations in a recording medium; Record carriers or media specially adapted for such transducing of information
    • G11B9/1463—Record carriers for recording or reproduction involving the use of microscopic probe means
    • G11B9/1472—Record carriers for recording or reproduction involving the use of microscopic probe means characterised by the form
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
    • G11B9/12—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor
    • G11B9/14—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor using microscopic probe means, i.e. recording or reproducing by means directly associated with the tip of a microscopic electrical probe as used in Scanning Tunneling Microscopy [STM] or Atomic Force Microscopy [AFM] for inducing physical or electrical perturbations in a recording medium; Record carriers or media specially adapted for such transducing of information
    • G11B9/1463—Record carriers for recording or reproduction involving the use of microscopic probe means
    • G11B9/149—Record carriers for recording or reproduction involving the use of microscopic probe means characterised by the memorising material or structure
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B11/00—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor
    • G11B11/08—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by electric charge or by variation of electric resistance or capacitance
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B2005/0002—Special dispositions or recording techniques
    • G11B2005/0005—Arrangements, methods or circuits
    • G11B2005/0021—Thermally assisted recording using an auxiliary energy source for heating the recording layer locally to assist the magnetization reversal
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
    • G11B9/04—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using record carriers having variable electric resistance; Record carriers therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5678—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using amorphous/crystalline phase transition storage elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Read Only Memory (AREA)

Abstract

DISPOSITIVO DE MEMóRIA,PROCESSO DE MAZEAMENTO DE INFORMAçãO, PROCESSO, E MATRIAL ESTRUTURADO. Um dispositivo de memória, incluindo uma pluralidade de células de memória em nanoescala (1510, 1512) criada aplicando pressão em e removimento pressão de uma ou mais regiões (1510, 1512) de uma substância (1502) para mudar a condutividade elétrica daquelas regiões (1510,).Uma sonda de leitura eletricamente condutora (1514) determinada as condutividades das regiões e desse modo a informação armazenada nas células. Uma sonda de escrita (1508) aplica pressão em e remove pressão de células selecionadas para mudar a conditividade elétrica daquelas células e de sse modo armazenar ou apagar informação.
BRPI0417480-1A 2003-12-09 2004-12-09 dispositivo de memória, processo de armazenamento de informação, processo, e material estruturado BRPI0417480A (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
AU2003906808A AU2003906808A0 (en) 2003-12-09 A Memory Device
PCT/AU2004/001735 WO2005057582A1 (en) 2003-12-09 2004-12-09 A memory device, an information storage process, a process, and a structured material

Publications (1)

Publication Number Publication Date
BRPI0417480A true BRPI0417480A (pt) 2007-05-08

Family

ID=34658473

Family Applications (1)

Application Number Title Priority Date Filing Date
BRPI0417480-1A BRPI0417480A (pt) 2003-12-09 2004-12-09 dispositivo de memória, processo de armazenamento de informação, processo, e material estruturado

Country Status (10)

Country Link
US (1) US20090323407A1 (pt)
EP (1) EP1700310A4 (pt)
JP (1) JP2007513525A (pt)
KR (1) KR20060132640A (pt)
CN (1) CN1890755A (pt)
BR (1) BRPI0417480A (pt)
CA (1) CA2552958A1 (pt)
NZ (1) NZ548315A (pt)
RU (1) RU2006124528A (pt)
WO (1) WO2005057582A1 (pt)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006046178A1 (en) * 2004-10-27 2006-05-04 Koninklijke Philips Electronics N.V. Semiconductor device with tunable energy band gap
US20090126589A1 (en) * 2005-06-08 2009-05-21 Ian Andrew Maxwell Patterning process
CN100356607C (zh) * 2005-10-19 2007-12-19 中国科学院上海微系统与信息技术研究所 一种纳米硫系化合物相变存储器的制备方法
JP2010512652A (ja) * 2006-12-13 2010-04-22 リオタ・ピーティーワイ・リミテッド 半導体ドーピング方法
FR2910686B1 (fr) * 2006-12-20 2009-04-03 Commissariat Energie Atomique Dispositif de memorisation a structure multi-niveaux
JP2010123820A (ja) * 2008-11-21 2010-06-03 Toshiba Corp 半導体記憶装置
CN109358234A (zh) * 2018-09-29 2019-02-19 元能科技（厦门）有限公司 一种极片电阻电导率测试方法

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60180886A (ja) * 1984-02-29 1985-09-14 Fujitsu Ltd パタ−ン転写方法
US4586164A (en) * 1984-04-12 1986-04-29 Ltv Aerospace And Defense Company Random access memory device utilizing phase change materials
US4916688A (en) * 1988-03-31 1990-04-10 International Business Machines Corporation Data storage method using state transformable materials
US5216631A (en) * 1990-11-02 1993-06-01 Sliwa Jr John W Microvibratory memory device
US5583477A (en) * 1996-03-08 1996-12-10 Mosten Products Company Wireless AC/DC bell
WO1997044780A1 (en) * 1996-05-20 1997-11-27 International Business Machines Corporation Shape memory alloy recording medium, storage devices based thereon, and method for using these storage devices
US5835477A (en) * 1996-07-10 1998-11-10 International Business Machines Corporation Mass-storage applications of local probe arrays
US6141241A (en) * 1998-06-23 2000-10-31 Energy Conversion Devices, Inc. Universal memory element with systems employing same and apparatus and method for reading, writing and programming same
DE10029593A1 (de) * 1999-07-03 2001-01-18 Ibm Verfahren und Vorrichtung zur Aufzeichnung, Speicherung und Wiedergabe von Daten
US6387530B1 (en) * 1999-08-27 2002-05-14 Seagate Technology Llc Patterned magnetic media via thermally induced phase transition
USD451957S1 (en) * 2000-02-23 2001-12-11 Ditta Francesco Pineider S.P.A. Ball-point pen
TWI244619B (en) * 2001-03-23 2005-12-01 Ibm Data read/write systems
DE60309232T2 (de) * 2002-03-05 2007-09-06 Mitsubishi Kagaku Media Co. Ltd. Phasenwechselaufzeichnungsmaterial für ein Informationsaufzeichnungsmedium und ein Informationsaufzeichnungsmedium dieses verwendend
US6972245B2 (en) * 2002-05-15 2005-12-06 The Regents Of The University Of California Method for co-fabricating strained and relaxed crystalline and poly-crystalline structures
JP3966514B2 (ja) * 2002-05-23 2007-08-29 インターナショナル・ビジネス・マシーンズ・コーポレーション 記憶装置、および記憶装置を操作する方法
ATE408880T1 (de) * 2002-05-23 2008-10-15 Ibm Speichergerät und verfahren zum abtasten eines speichermediums
US7233517B2 (en) * 2002-10-15 2007-06-19 Nanochip, Inc. Atomic probes and media for high density data storage
US7183568B2 (en) * 2002-12-23 2007-02-27 International Business Machines Corporation Piezoelectric array with strain dependant conducting elements and method therefor
US7460462B2 (en) * 2003-12-17 2008-12-02 Hewlett-Packard Development Company, L.P. Contact probe storage fet sensor and write heater arrangements

Also Published As

Publication number Publication date
KR20060132640A (ko) 2006-12-21
RU2006124528A (ru) 2008-01-20
JP2007513525A (ja) 2007-05-24
CN1890755A (zh) 2007-01-03
EP1700310A1 (en) 2006-09-13
CA2552958A1 (en) 2005-06-23
WO2005057582A1 (en) 2005-06-23
NZ548315A (en) 2008-07-31
US20090323407A1 (en) 2009-12-31
EP1700310A4 (en) 2007-08-08

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Legal Events

Date Code Title Description
B08F Application dismissed because of non-payment of annual fees [chapter 8.6 patent gazette]

Free format text: REFERENTE AS 6A E 7A ANUIDADES.

B08K Patent lapsed as no evidence of payment of the annual fee has been furnished to inpi [chapter 8.11 patent gazette]

Free format text: REFERENTE AO DESPACHO 8.6 PUBLICADO NA RPI 2158 DE 15/05/2012.