BR9916684A - Sistema de semicondutor verticalmente integrado - Google Patents

Sistema de semicondutor verticalmente integrado

Info

Publication number
BR9916684A
BR9916684A BR9916684-4A BR9916684A BR9916684A BR 9916684 A BR9916684 A BR 9916684A BR 9916684 A BR9916684 A BR 9916684A BR 9916684 A BR9916684 A BR 9916684A
Authority
BR
Brazil
Prior art keywords
semiconductor system
vertically integrated
integrated semiconductor
semiconductor chip
main side
Prior art date
Application number
BR9916684-4A
Other languages
English (en)
Inventor
Michael Smola
Andreas Kux
Original Assignee
Infineon Technologies Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies Ag filed Critical Infineon Technologies Ag
Publication of BR9916684A publication Critical patent/BR9916684A/pt

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L25/0657—Stacked arrangements of devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06517—Bump or bump-like direct electrical connections from device to substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06541—Conductive via connections through the device, e.g. vertical interconnects, through silicon via [TSV]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06555—Geometry of the stack, e.g. form of the devices, geometry to facilitate stacking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06572—Auxiliary carrier between devices, the carrier having an electrical connection structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Wire Bonding (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

Patente de Invenção: <B>"SISTEMA DE SEMICONDUTOR VERTICALMENTE INTEGRADO"<D>. A presente invenção refere-se a um sistema de semicondutor com pelo menos um chip de semicondutor com um primeiro e um segundo lado principal, que possui estruturas ativas no primeiro e no segundo lado principal que são ligados entre si por meio de ligações que atravessam o chip de semicondutor, sendo que o pelo menos único chip de semicondutor, com um dos seus lados principais, é disposto em um primeiro lado principal de um suporte.
BR9916684-4A 1998-12-30 1999-12-21 Sistema de semicondutor verticalmente integrado BR9916684A (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19860819 1998-12-30
PCT/DE1999/004056 WO2000041241A1 (de) 1998-12-30 1999-12-21 Vertikal integrierte halbleiteranordnung

Publications (1)

Publication Number Publication Date
BR9916684A true BR9916684A (pt) 2001-09-25

Family

ID=7893180

Family Applications (1)

Application Number Title Priority Date Filing Date
BR9916684-4A BR9916684A (pt) 1998-12-30 1999-12-21 Sistema de semicondutor verticalmente integrado

Country Status (8)

Country Link
US (1) US6388320B2 (pt)
EP (1) EP1145315A1 (pt)
JP (1) JP2002534809A (pt)
KR (1) KR20010104320A (pt)
CN (1) CN1332888A (pt)
BR (1) BR9916684A (pt)
RU (1) RU2213391C2 (pt)
WO (1) WO2000041241A1 (pt)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3910493B2 (ja) * 2002-06-14 2007-04-25 新光電気工業株式会社 半導体装置及びその製造方法
WO2005093834A1 (ja) * 2004-03-25 2005-10-06 Nec Corporation チップ積層型半導体装置
US7511359B2 (en) * 2005-12-29 2009-03-31 Intel Corporation Dual die package with high-speed interconnect
FR2901636A1 (fr) * 2006-05-24 2007-11-30 Commissariat Energie Atomique Connecteur a vias isoles
US7791175B2 (en) * 2007-12-20 2010-09-07 Mosaid Technologies Incorporated Method for stacking serially-connected integrated circuits and multi-chip device made from same
US8399973B2 (en) * 2007-12-20 2013-03-19 Mosaid Technologies Incorporated Data storage and stackable configurations
US8519537B2 (en) * 2010-02-26 2013-08-27 Taiwan Semiconductor Manufacturing Company, Ltd. 3D semiconductor package interposer with die cavity
US9385095B2 (en) 2010-02-26 2016-07-05 Taiwan Semiconductor Manufacturing Company, Ltd. 3D semiconductor package interposer with die cavity
US8618654B2 (en) 2010-07-20 2013-12-31 Marvell World Trade Ltd. Structures embedded within core material and methods of manufacturing thereof
US8218329B2 (en) * 2010-03-29 2012-07-10 Xerox Corporation Back-to-back package accomplishing short signal path lengths
US10026671B2 (en) 2014-02-14 2018-07-17 Taiwan Semiconductor Manufacturing Company, Ltd. Substrate design for semiconductor packages and method of forming same
US10056267B2 (en) 2014-02-14 2018-08-21 Taiwan Semiconductor Manufacturing Company, Ltd. Substrate design for semiconductor packages and method of forming same
US9768090B2 (en) 2014-02-14 2017-09-19 Taiwan Semiconductor Manufacturing Company, Ltd. Substrate design for semiconductor packages and method of forming same
US9935090B2 (en) 2014-02-14 2018-04-03 Taiwan Semiconductor Manufacturing Company, Ltd. Substrate design for semiconductor packages and method of forming same
US9653443B2 (en) 2014-02-14 2017-05-16 Taiwan Semiconductor Manufacturing Company, Ltd. Thermal performance structure for semiconductor packages and method of forming same
US9564416B2 (en) 2015-02-13 2017-02-07 Taiwan Semiconductor Manufacturing Company, Ltd. Package structures and methods of forming the same

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR900008647B1 (ko) * 1986-03-20 1990-11-26 후지쓰 가부시끼가이샤 3차원 집적회로와 그의 제조방법
US4774632A (en) * 1987-07-06 1988-09-27 General Electric Company Hybrid integrated circuit chip package
US5382827A (en) * 1992-08-07 1995-01-17 Fujitsu Limited Functional substrates for packaging semiconductor chips
EP0804806A1 (en) * 1994-12-22 1997-11-05 Benedict G. Pace Device for superheating steam
JP2905736B2 (ja) * 1995-12-18 1999-06-14 株式会社エイ・ティ・アール光電波通信研究所 半導体装置
US5760478A (en) * 1996-08-20 1998-06-02 International Business Machines Corporation Clock skew minimization system and method for integrated circuits

Also Published As

Publication number Publication date
EP1145315A1 (de) 2001-10-17
US6388320B2 (en) 2002-05-14
WO2000041241A1 (de) 2000-07-13
US20020003297A1 (en) 2002-01-10
JP2002534809A (ja) 2002-10-15
KR20010104320A (ko) 2001-11-24
CN1332888A (zh) 2002-01-23
RU2213391C2 (ru) 2003-09-27

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Legal Events

Date Code Title Description
B08F Application dismissed because of non-payment of annual fees [chapter 8.6 patent gazette]

Free format text: REFERENTE A 5O, 6O E 7O ANUIDADES.

B08K Patent lapsed as no evidence of payment of the annual fee has been furnished to inpi [chapter 8.11 patent gazette]

Free format text: REFERENTE AO DESPACHO 8.6 PUBLICADO NA RPI 1913 DE 04/09/2007.