BR8605249A - Metodo para fazer aberturas submicrometricas de mascara empregando tecnicas de paredes laterais e desprendimento - Google Patents
Metodo para fazer aberturas submicrometricas de mascara empregando tecnicas de paredes laterais e desprendimentoInfo
- Publication number
- BR8605249A BR8605249A BR8605249A BR8605249A BR8605249A BR 8605249 A BR8605249 A BR 8605249A BR 8605249 A BR8605249 A BR 8605249A BR 8605249 A BR8605249 A BR 8605249A BR 8605249 A BR8605249 A BR 8605249A
- Authority
- BR
- Brazil
- Prior art keywords
- submichrometric
- mask
- openings
- making
- side wall
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
- H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
- H10P76/403—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials for lift-off processes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
- H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
- H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
- H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/942—Masking
- Y10S438/945—Special, e.g. metal
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/942—Masking
- Y10S438/947—Subphotolithographic processing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/942—Masking
- Y10S438/948—Radiation resist
- Y10S438/951—Lift-off
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US06/799,053 US4654119A (en) | 1985-11-18 | 1985-11-18 | Method for making submicron mask openings using sidewall and lift-off techniques |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| BR8605249A true BR8605249A (pt) | 1987-07-28 |
Family
ID=25174932
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BR8605249A BR8605249A (pt) | 1985-11-18 | 1986-10-28 | Metodo para fazer aberturas submicrometricas de mascara empregando tecnicas de paredes laterais e desprendimento |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US4654119A (https=) |
| EP (1) | EP0223032A3 (https=) |
| JP (1) | JPS62126637A (https=) |
| CN (1) | CN86107855B (https=) |
| AU (1) | AU576086B2 (https=) |
| BR (1) | BR8605249A (https=) |
| CA (1) | CA1227456A (https=) |
| IN (1) | IN168426B (https=) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4842633A (en) * | 1987-08-25 | 1989-06-27 | Matsushita Electric Industrial Co., Ltd. | Method of manufacturing molds for molding optical glass elements and diffraction gratings |
| DE3888184D1 (de) * | 1988-11-17 | 1994-04-07 | Ibm | Verfahren zur Herstellung von Masken mit Strukturen im Submikrometerbereich. |
| US5858256A (en) * | 1996-07-11 | 1999-01-12 | The Board Of Trustees Of The Leland Stanford, Jr. University | Method of forming small aperture |
| US5956583A (en) * | 1997-06-30 | 1999-09-21 | Fuller; Robert T. | Method for forming complementary wells and self-aligned trench with a single mask |
| US20060191863A1 (en) * | 2005-02-25 | 2006-08-31 | Benjamin Szu-Min Lin | Method for fabricating etch mask and patterning process using the same |
| KR101291766B1 (ko) * | 2007-06-07 | 2013-08-01 | 도쿄엘렉트론가부시키가이샤 | 패터닝 방법 |
| JP2009094125A (ja) * | 2007-10-04 | 2009-04-30 | Elpida Memory Inc | 半導体装置の製造方法 |
| JP2013004669A (ja) * | 2011-06-15 | 2013-01-07 | Toshiba Corp | パターン形成方法、電子デバイスの製造方法及び電子デバイス |
| CN105226002B (zh) * | 2014-07-04 | 2019-05-21 | 北大方正集团有限公司 | 自对准沟槽型功率器件及其制造方法 |
| US10720670B2 (en) | 2018-02-08 | 2020-07-21 | International Business Machines Corporation | Self-aligned 3D solid state thin film battery |
| US11056722B2 (en) | 2018-02-08 | 2021-07-06 | International Business Machines Corporation | Tool and method of fabricating a self-aligned solid state thin film battery |
| US10679853B2 (en) | 2018-02-08 | 2020-06-09 | International Business Machines Corporation | Self-aligned, over etched hard mask fabrication method and structure |
| JP2024119252A (ja) * | 2023-02-22 | 2024-09-03 | 東京エレクトロン株式会社 | 基板処理方法、基板処理システム及び保護膜 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3982943A (en) * | 1974-03-05 | 1976-09-28 | Ibm Corporation | Lift-off method of fabricating thin films and a structure utilizable as a lift-off mask |
| US4209349A (en) * | 1978-11-03 | 1980-06-24 | International Business Machines Corporation | Method for forming a narrow dimensioned mask opening on a silicon body utilizing reactive ion etching |
| US4274909A (en) * | 1980-03-17 | 1981-06-23 | International Business Machines Corporation | Method for forming ultra fine deep dielectric isolation |
| JPS57130431A (en) * | 1981-02-06 | 1982-08-12 | Fujitsu Ltd | Manufacture of semiconductor device |
| US4387145A (en) * | 1981-09-28 | 1983-06-07 | Fairchild Camera & Instrument Corp. | Lift-off shadow mask |
| US4430791A (en) * | 1981-12-30 | 1984-02-14 | International Business Machines Corporation | Sub-micrometer channel length field effect transistor process |
| JPS5870534A (ja) * | 1982-09-27 | 1983-04-27 | フエアチアイルド・カメラ・アンド・インストルメント・コ−ポレ−シヨン | リフトオフ・シヤドウマスクの形成方法 |
| DE3242113A1 (de) * | 1982-11-13 | 1984-05-24 | Ibm Deutschland Gmbh, 7000 Stuttgart | Verfahren zur herstellung einer duennen dielektrischen isolation in einem siliciumhalbleiterkoerper |
| US4572765A (en) * | 1983-05-02 | 1986-02-25 | Fairchild Camera & Instrument Corporation | Method of fabricating integrated circuit structures using replica patterning |
| KR890003903B1 (ko) * | 1983-06-29 | 1989-10-10 | 가부시끼가이샤 히다찌세이사꾸쇼 | 패턴 형성 방법 |
| US4575924A (en) * | 1984-07-02 | 1986-03-18 | Texas Instruments Incorporated | Process for fabricating quantum-well devices utilizing etch and refill techniques |
-
1985
- 1985-11-18 US US06/799,053 patent/US4654119A/en not_active Expired - Fee Related
-
1986
- 1986-05-22 CA CA000509770A patent/CA1227456A/en not_active Expired
- 1986-06-13 AU AU58846/86A patent/AU576086B2/en not_active Ceased
- 1986-10-03 EP EP86113666A patent/EP0223032A3/en not_active Ceased
- 1986-10-15 JP JP61243327A patent/JPS62126637A/ja active Granted
- 1986-10-28 BR BR8605249A patent/BR8605249A/pt not_active IP Right Cessation
- 1986-11-14 CN CN86107855A patent/CN86107855B/zh not_active Expired
- 1986-12-03 IN IN937/MAS/86A patent/IN168426B/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| CN86107855A (zh) | 1987-08-19 |
| AU5884686A (en) | 1987-05-21 |
| JPH0543287B2 (https=) | 1993-07-01 |
| AU576086B2 (en) | 1988-08-11 |
| EP0223032A2 (en) | 1987-05-27 |
| IN168426B (https=) | 1991-03-30 |
| JPS62126637A (ja) | 1987-06-08 |
| CN86107855B (zh) | 1988-06-29 |
| US4654119A (en) | 1987-03-31 |
| CA1227456A (en) | 1987-09-29 |
| EP0223032A3 (en) | 1990-06-27 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| B21A | Patent or certificate of addition expired [chapter 21.1 patent gazette] |
Free format text: PATENTE EXTINTA EM 28/10/2001 |
|
| B15K | Others concerning applications: alteration of classification |
Ipc: H01L 21/033 (2006.01) |