BR8105747A - Processo de fabricar uma liga amorfa fotosensivel, a respectiva liga e dispositivo fotosensivel - Google Patents
Processo de fabricar uma liga amorfa fotosensivel, a respectiva liga e dispositivo fotosensivelInfo
- Publication number
- BR8105747A BR8105747A BR8105747A BR8105747A BR8105747A BR 8105747 A BR8105747 A BR 8105747A BR 8105747 A BR8105747 A BR 8105747A BR 8105747 A BR8105747 A BR 8105747A BR 8105747 A BR8105747 A BR 8105747A
- Authority
- BR
- Brazil
- Prior art keywords
- alloy
- photosensitive
- amorfa
- manufacturing
- photosensitive device
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0026—Activation or excitation of reactive gases outside the coating chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1604—Amorphous materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/065—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the graded gap type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
- H01L31/204—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table including AIVBIV alloys, e.g. SiGe, SiC
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Ceramic Engineering (AREA)
- Photovoltaic Devices (AREA)
- Silicon Compounds (AREA)
- Chemical Vapour Deposition (AREA)
- Photoreceptors In Electrophotography (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/185,520 US4342044A (en) | 1978-03-08 | 1980-09-09 | Method for optimizing photoresponsive amorphous alloys and devices |
US20657980A | 1980-11-13 | 1980-11-13 |
Publications (1)
Publication Number | Publication Date |
---|---|
BR8105747A true BR8105747A (pt) | 1982-05-25 |
Family
ID=26881211
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BR8105747A BR8105747A (pt) | 1980-09-09 | 1981-09-08 | Processo de fabricar uma liga amorfa fotosensivel, a respectiva liga e dispositivo fotosensivel |
Country Status (14)
Country | Link |
---|---|
KR (1) | KR890000478B1 (sv) |
AU (1) | AU547173B2 (sv) |
BR (1) | BR8105747A (sv) |
CA (1) | CA1192819A (sv) |
DE (1) | DE3135411C2 (sv) |
ES (1) | ES8302361A1 (sv) |
FR (1) | FR2490018B1 (sv) |
GB (1) | GB2083701B (sv) |
IE (1) | IE52207B1 (sv) |
IL (1) | IL63754A (sv) |
IN (1) | IN157458B (sv) |
IT (1) | IT1138202B (sv) |
NL (1) | NL8104140A (sv) |
SE (1) | SE455554B (sv) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5795677A (en) * | 1980-12-03 | 1982-06-14 | Kanegafuchi Chem Ind Co Ltd | Amorphous silicon type photoelectric tranducer |
US4523214A (en) * | 1981-07-03 | 1985-06-11 | Fuji Photo Film Co., Ltd. | Solid state image pickup device utilizing microcrystalline and amorphous silicon |
EP0094426B1 (en) * | 1981-11-20 | 1987-08-05 | Chronar Corporation | Bandgap control in amorphous semiconductors |
US4460670A (en) * | 1981-11-26 | 1984-07-17 | Canon Kabushiki Kaisha | Photoconductive member with α-Si and C, N or O and dopant |
US4460669A (en) * | 1981-11-26 | 1984-07-17 | Canon Kabushiki Kaisha | Photoconductive member with α-Si and C, U or D and dopant |
US4465750A (en) * | 1981-12-22 | 1984-08-14 | Canon Kabushiki Kaisha | Photoconductive member with a -Si having two layer regions |
JPS5914679A (ja) * | 1982-07-16 | 1984-01-25 | Toshiba Corp | 光起電力装置 |
JPS59111152A (ja) * | 1982-12-16 | 1984-06-27 | Sharp Corp | 電子写真用感光体 |
US4547621A (en) * | 1984-06-25 | 1985-10-15 | Sovonics Solar Systems | Stable photovoltaic devices and method of producing same |
DE8430810U1 (de) * | 1984-10-19 | 1986-05-07 | Siemens AG, 1000 Berlin und 8000 München | Solarzelle mit graduellem Energiebandabstand mit einem aus amorphem Silizium bestehenden Halbleiterkorper |
JPS61104678A (ja) * | 1984-10-29 | 1986-05-22 | Mitsubishi Electric Corp | アモルフアス太陽電池 |
CA1269164A (en) * | 1986-03-24 | 1990-05-15 | Metin Aktik | Photosensitive diode with hydrogenated amorphous silicon layer |
FR2630260B1 (fr) * | 1988-04-19 | 1991-11-29 | Thomson Csf | Photodetecteur en silicium amorphe a rendement quantique ameliore |
DE19700697A1 (de) * | 1997-01-13 | 1998-07-16 | Goeller Christian | Verfahren zur Herstellung von Solarzellen |
US6437233B1 (en) * | 2000-07-25 | 2002-08-20 | Trw Inc. | Solar cell having multi-quantum well layers transitioning from small to large band gaps and method of manufacture therefor |
EP1919264A1 (en) | 2006-11-02 | 2008-05-07 | Dow Corning Corporation | Device for forming a film by deposition from a plasma |
EP1923483A1 (en) | 2006-11-02 | 2008-05-21 | Dow Corning Corporation | Deposition of amorphous silicon films by electron cyclotron resonance |
EP1918414A1 (en) | 2006-11-02 | 2008-05-07 | Dow Corning Corporation | Film deposition of amorphous films with a graded bandgap by electron cyclotron resonance |
EP1918966A1 (en) | 2006-11-02 | 2008-05-07 | Dow Corning Corporation | Method for forming a film with a graded bandgap by deposition of an amorphous material from a plasma |
EP1918967B1 (en) | 2006-11-02 | 2013-12-25 | Dow Corning Corporation | Method of forming a film by deposition from a plasma |
EP1918965A1 (en) | 2006-11-02 | 2008-05-07 | Dow Corning Corporation | Method and apparatus for forming a film by deposition from a plasma |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA1123525A (en) * | 1977-10-12 | 1982-05-11 | Stanford R. Ovshinsky | High temperature amorphous semiconductor member and method of making same |
US4342044A (en) * | 1978-03-08 | 1982-07-27 | Energy Conversion Devices, Inc. | Method for optimizing photoresponsive amorphous alloys and devices |
US4217374A (en) * | 1978-03-08 | 1980-08-12 | Energy Conversion Devices, Inc. | Amorphous semiconductors equivalent to crystalline semiconductors |
US4226898A (en) * | 1978-03-16 | 1980-10-07 | Energy Conversion Devices, Inc. | Amorphous semiconductors equivalent to crystalline semiconductors produced by a glow discharge process |
JPS5513938A (en) | 1978-07-17 | 1980-01-31 | Shunpei Yamazaki | Photoelectronic conversion semiconductor device and its manufacturing method |
JPS5513939A (en) | 1978-07-17 | 1980-01-31 | Shunpei Yamazaki | Photoelectronic conversion semiconductor device |
DE2950008A1 (de) * | 1979-12-12 | 1981-06-19 | Siemens AG, 1000 Berlin und 8000 München | Dauermagneterregter laeufer fuer eine synchronmaschine |
FR2490019B1 (fr) * | 1980-09-09 | 1985-10-31 | Energy Conversion Devices Inc | Procede et dispositif pour augmenter l'intervalle de bandes d'alliages amorphes photosensibles et alliages obtenus |
-
1981
- 1981-09-07 GB GB8126963A patent/GB2083701B/en not_active Expired
- 1981-09-07 NL NL8104140A patent/NL8104140A/nl active Search and Examination
- 1981-09-07 IT IT23825/81A patent/IT1138202B/it active
- 1981-09-07 DE DE3135411A patent/DE3135411C2/de not_active Expired - Lifetime
- 1981-09-07 IE IE2063/81A patent/IE52207B1/en not_active IP Right Cessation
- 1981-09-07 IL IL63754A patent/IL63754A/xx unknown
- 1981-09-07 FR FR8116956A patent/FR2490018B1/fr not_active Expired
- 1981-09-07 KR KR1019810003328A patent/KR890000478B1/ko active
- 1981-09-07 ES ES505268A patent/ES8302361A1/es not_active Expired
- 1981-09-07 IN IN1003/CAL/81A patent/IN157458B/en unknown
- 1981-09-07 SE SE8105277A patent/SE455554B/sv not_active IP Right Cessation
- 1981-09-08 AU AU75019/81A patent/AU547173B2/en not_active Expired
- 1981-09-08 CA CA000385402A patent/CA1192819A/en not_active Expired
- 1981-09-08 BR BR8105747A patent/BR8105747A/pt not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
FR2490018B1 (fr) | 1986-01-17 |
NL8104140A (nl) | 1982-04-01 |
KR890000478B1 (ko) | 1989-03-18 |
SE8105277L (sv) | 1982-03-10 |
DE3135411C2 (de) | 1994-07-07 |
ES505268A0 (es) | 1982-12-16 |
IN157458B (sv) | 1986-04-05 |
ES8302361A1 (es) | 1982-12-16 |
IL63754A (en) | 1984-07-31 |
DE3135411A1 (de) | 1982-09-23 |
AU7501981A (en) | 1982-03-18 |
IT8123825A0 (it) | 1981-09-07 |
IE812063L (en) | 1982-03-09 |
AU547173B2 (en) | 1985-10-10 |
IT1138202B (it) | 1986-09-17 |
KR830008406A (ko) | 1983-11-18 |
IL63754A0 (en) | 1981-12-31 |
IE52207B1 (en) | 1987-08-05 |
SE455554B (sv) | 1988-07-18 |
FR2490018A1 (fr) | 1982-03-12 |
GB2083701A (en) | 1982-03-24 |
CA1192819A (en) | 1985-09-03 |
GB2083701B (en) | 1985-09-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
BR8105745A (pt) | Processo de fabricar uma liga amorfa fotosensivel, a respectiva liga e dispositivo fotosensivel | |
BR8105747A (pt) | Processo de fabricar uma liga amorfa fotosensivel, a respectiva liga e dispositivo fotosensivel | |
BR8103353A (pt) | Processo e dispositivo para producao de um objeto tubular | |
ES514494A0 (es) | "un metodo de licuar una carga de vidrio". | |
BR7703959A (pt) | Processo de fabricacao de uma armacao de bicicleta e armacao de bicileta | |
BR8301065A (pt) | Processo para preparacao de uma liga e liga assim obtida | |
BR8101676A (pt) | Conjunto de mola de caixa; processo para montar uma mola; e mola de deflexao limitada | |
BR8204152A (pt) | Liga a base de elevada percentagem de niquel - cromo | |
BR8105746A (pt) | Processo de fabricar uma liga amorfa fotossensivel, repectiva liga e dispositivo fotossensivel | |
ES501668A0 (es) | Un metodo con su dispositivo correspondiente para la fabri- cacion de cuerdas para raquetas | |
BR8205545A (pt) | Barbante e processo para a fabricacao de um barbante | |
BR8100204A (pt) | Liga e amalgama | |
BR8202764A (pt) | Diafragma e processo de fabricacao de diafragma | |
BR8106641A (pt) | Processo de montagem de um moto-redutor e moto-redutor correspondente | |
BR8102724A (pt) | Processo para a preparacao de 2-cloro-1,1,1,2,3,3,3-heptafluorpropano | |
BR8106017A (pt) | Meio magnetico e processo de sua fabricacao | |
BR8105742A (pt) | Processo de fabricar uma liga amorfa fotossensivel, a respectiva liga e dispositivo fotossensivel | |
BR8403280A (pt) | Composicoes de liga metalica dupla/polimero | |
BR8300166A (pt) | Processo de fabricacao da e-caprolactona | |
BR7806105A (pt) | Conjunto de lampadas e processo de sua fabricacao | |
IT1171372B (it) | Copiatrice a processo fotomeccanico | |
BR8207403A (pt) | Processo e dispositivo correlato para a fabricacao de pneumaticos | |
BR8007562A (pt) | Liga de magnesio | |
BR7903197A (pt) | Acoplamento,elemento acoplador,estrutura de armacao e processo de acoplar uma pluralidade de membros | |
BR8105338A (pt) | Processo para a preparacao de copolimeros endureciveis e sua aplicacao |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM | Lapse due to non-payment of fees (art. 50) |