BR7902521A - Tiristor e processo de formar o mesmo - Google Patents
Tiristor e processo de formar o mesmoInfo
- Publication number
- BR7902521A BR7902521A BR7902521A BR7902521A BR7902521A BR 7902521 A BR7902521 A BR 7902521A BR 7902521 A BR7902521 A BR 7902521A BR 7902521 A BR7902521 A BR 7902521A BR 7902521 A BR7902521 A BR 7902521A
- Authority
- BR
- Brazil
- Prior art keywords
- thyristor
- forming
- same
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66363—Thyristors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1012—Base regions of thyristors
- H01L29/102—Cathode base regions of thyristors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41716—Cathode or anode electrodes for thyristors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/7428—Thyristor-type devices, e.g. having four-zone regenerative action having an amplifying gate structure, e.g. cascade (Darlington) configuration
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US89930978A | 1978-04-24 | 1978-04-24 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| BR7902521A true BR7902521A (pt) | 1979-10-30 |
Family
ID=25410764
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BR7902521A BR7902521A (pt) | 1978-04-24 | 1979-04-24 | Tiristor e processo de formar o mesmo |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPS54152477A (pt) |
| BR (1) | BR7902521A (pt) |
| FR (1) | FR2424630B1 (pt) |
| GB (1) | GB2019650B (pt) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4994885A (en) * | 1988-07-01 | 1991-02-19 | Sanken Electric Co., Ltd. | Bidirectional triode thyristor |
| JPH09181092A (ja) * | 1995-12-27 | 1997-07-11 | Toshiba Corp | 半導体装置およびその製造方法 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2109508C2 (de) * | 1971-03-01 | 1985-04-04 | General Electric Co., Schenectady, N.Y. | Thyristor |
| BE787597A (fr) * | 1971-08-16 | 1973-02-16 | Siemens Ag | Thyristor |
| DE2140993C3 (de) * | 1971-08-16 | 1979-06-21 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Thyristor |
| JPS502482A (pt) * | 1973-05-08 | 1975-01-11 | ||
| JPS5020608U (pt) * | 1973-06-19 | 1975-03-08 | ||
| DE2346237A1 (de) * | 1973-09-13 | 1975-03-27 | Siemens Ag | Thyristor |
| SE392783B (sv) * | 1975-06-19 | 1977-04-18 | Asea Ab | Halvledaranordning innefattande en tyristor och en felteffekttransistordel |
| DE2549563C2 (de) * | 1975-11-05 | 1983-07-14 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Lichtzündbarer Thyristor |
| JPS5291384A (en) * | 1976-01-22 | 1977-08-01 | Westinghouse Electric Corp | Semiconductor switching element |
| CH598696A5 (pt) * | 1976-10-08 | 1978-05-12 | Bbc Brown Boveri & Cie |
-
1979
- 1979-04-23 JP JP4918379A patent/JPS54152477A/ja active Pending
- 1979-04-24 GB GB7914297A patent/GB2019650B/en not_active Expired
- 1979-04-24 FR FR7910326A patent/FR2424630B1/fr not_active Expired
- 1979-04-24 BR BR7902521A patent/BR7902521A/pt unknown
Also Published As
| Publication number | Publication date |
|---|---|
| JPS54152477A (en) | 1979-11-30 |
| FR2424630B1 (fr) | 1985-06-07 |
| GB2019650A (en) | 1979-10-31 |
| GB2019650B (en) | 1982-07-07 |
| FR2424630A1 (fr) | 1979-11-23 |
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