GB2019650B - Thyristor and method of making the thyristor - Google Patents

Thyristor and method of making the thyristor

Info

Publication number
GB2019650B
GB2019650B GB7914297A GB7914297A GB2019650B GB 2019650 B GB2019650 B GB 2019650B GB 7914297 A GB7914297 A GB 7914297A GB 7914297 A GB7914297 A GB 7914297A GB 2019650 B GB2019650 B GB 2019650B
Authority
GB
United Kingdom
Prior art keywords
thyristor
making
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB7914297A
Other versions
GB2019650A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of GB2019650A publication Critical patent/GB2019650A/en
Application granted granted Critical
Publication of GB2019650B publication Critical patent/GB2019650B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66363—Thyristors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1012—Base regions of thyristors
    • H01L29/102—Cathode base regions of thyristors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41716—Cathode or anode electrodes for thyristors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7428—Thyristor-type devices, e.g. having four-zone regenerative action having an amplifying gate structure, e.g. cascade (Darlington) configuration

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Thyristors (AREA)
  • Bipolar Transistors (AREA)
GB7914297A 1978-04-24 1979-04-24 Thyristor and method of making the thyristor Expired GB2019650B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US89930978A 1978-04-24 1978-04-24

Publications (2)

Publication Number Publication Date
GB2019650A GB2019650A (en) 1979-10-31
GB2019650B true GB2019650B (en) 1982-07-07

Family

ID=25410764

Family Applications (1)

Application Number Title Priority Date Filing Date
GB7914297A Expired GB2019650B (en) 1978-04-24 1979-04-24 Thyristor and method of making the thyristor

Country Status (4)

Country Link
JP (1) JPS54152477A (en)
BR (1) BR7902521A (en)
FR (1) FR2424630B1 (en)
GB (1) GB2019650B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4994885A (en) * 1988-07-01 1991-02-19 Sanken Electric Co., Ltd. Bidirectional triode thyristor
JPH09181092A (en) * 1995-12-27 1997-07-11 Toshiba Corp Semiconductor device and manufacture thereof

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2109508C2 (en) * 1971-03-01 1985-04-04 General Electric Co., Schenectady, N.Y. Thyristor
BE787597A (en) * 1971-08-16 1973-02-16 Siemens Ag THYRISTOR
DE2140993C3 (en) * 1971-08-16 1979-06-21 Siemens Ag, 1000 Berlin Und 8000 Muenchen Thyristor
JPS502482A (en) * 1973-05-08 1975-01-11
JPS5020608U (en) * 1973-06-19 1975-03-08
DE2346237A1 (en) * 1973-09-13 1975-03-27 Siemens Ag THYRISTOR
SE392783B (en) * 1975-06-19 1977-04-18 Asea Ab SEMICONDUCTOR DEVICE INCLUDING A THYRIST AND A FIELD POWER TRANSISTOR PART
DE2549563C2 (en) * 1975-11-05 1983-07-14 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Light-ignitable thyristor
JPS5291384A (en) * 1976-01-22 1977-08-01 Westinghouse Electric Corp Semiconductor switching element
CH598696A5 (en) * 1976-10-08 1978-05-12 Bbc Brown Boveri & Cie

Also Published As

Publication number Publication date
BR7902521A (en) 1979-10-30
GB2019650A (en) 1979-10-31
FR2424630B1 (en) 1985-06-07
FR2424630A1 (en) 1979-11-23
JPS54152477A (en) 1979-11-30

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee