FR2424630A1 - THYRISTOR PERFECTS AND MANUFACTURING PROCESS - Google Patents
THYRISTOR PERFECTS AND MANUFACTURING PROCESSInfo
- Publication number
- FR2424630A1 FR2424630A1 FR7910326A FR7910326A FR2424630A1 FR 2424630 A1 FR2424630 A1 FR 2424630A1 FR 7910326 A FR7910326 A FR 7910326A FR 7910326 A FR7910326 A FR 7910326A FR 2424630 A1 FR2424630 A1 FR 2424630A1
- Authority
- FR
- France
- Prior art keywords
- thyristor
- perfects
- manufacturing process
- region
- alignment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66363—Thyristors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1012—Base regions of thyristors
- H01L29/102—Cathode base regions of thyristors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41716—Cathode or anode electrodes for thyristors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/7428—Thyristor-type devices, e.g. having four-zone regenerative action having an amplifying gate structure, e.g. cascade (Darlington) configuration
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Thyristors (AREA)
- Bipolar Transistors (AREA)
Abstract
L'INVENTION CONCERNE LES SEMI-CONDUCTEURS. POUR OBTENIR UN POTENTIEL UNIFORME LE LONG DE LA LIGNE D'AMORCAGE 42 D'UN THYRISTOR, ON FORME UNE REGION D'ALIGNEMENT 50 DU MEME TYPE DE CONDUCTIVITE QUE LA ZONE D'EMETTEUR 32. LE BORD INTERIEUR 52 DE LA REGION 50 ET LA LIGNE D'AMORCAGE 42 FORMENT DES CERCLES CONCENTRIQUES. CETTE STRUCTURE PERMET DE COMPENSER UN DEFAUT D'ALIGNEMENT ENTRE LES MASQUES QUE L'ON UTILISE RESPECTIVEMENT POUR FORMER L'EMETTEUR 32 ET LA GACHETTE 62. APPLICATION AUX THYRISTORS.THE INVENTION CONCERNS SEMICONDUCTORS. TO OBTAIN A UNIFORM POTENTIAL ALONG THE FIRING LINE 42 OF A THYRISTOR, AN ALIGNMENT REGION 50 IS FORMED OF THE SAME TYPE OF CONDUCTIVITY AS THE EMITTER ZONE 32. THE INNER EDGE 52 OF THE REGION 50 AND THE PRIMER LINE 42 FORM CONCENTRIC CIRCLES. THIS STRUCTURE ALLOWS TO COMPENSATE FOR AN ALIGNMENT FAULT BETWEEN THE MASKS THAT ARE USED RESPECTIVELY TO TRAIN THE TRANSMITTER 32 AND THE TRIGGER 62. APPLICATION TO THYRISTORS.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US89930978A | 1978-04-24 | 1978-04-24 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2424630A1 true FR2424630A1 (en) | 1979-11-23 |
FR2424630B1 FR2424630B1 (en) | 1985-06-07 |
Family
ID=25410764
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7910326A Expired FR2424630B1 (en) | 1978-04-24 | 1979-04-24 | IMPROVED THYRISTOR AND MANUFACTURING METHOD |
Country Status (4)
Country | Link |
---|---|
JP (1) | JPS54152477A (en) |
BR (1) | BR7902521A (en) |
FR (1) | FR2424630B1 (en) |
GB (1) | GB2019650B (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4994885A (en) * | 1988-07-01 | 1991-02-19 | Sanken Electric Co., Ltd. | Bidirectional triode thyristor |
JPH09181092A (en) * | 1995-12-27 | 1997-07-11 | Toshiba Corp | Semiconductor device and manufacture thereof |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2109508A1 (en) * | 1971-03-01 | 1972-09-07 | Gen Electric | Thyristor |
DE2140993A1 (en) * | 1971-08-16 | 1973-03-01 | Siemens Ag | THYRISTOR |
FR2149405A1 (en) * | 1971-08-16 | 1973-03-30 | Siemens Ag | |
FR2244265A1 (en) * | 1973-09-13 | 1975-04-11 | Siemens Ag | |
US3958268A (en) * | 1973-05-08 | 1976-05-18 | Hitachi, Ltd. | Thyristor highly proof against time rate of change of voltage |
DE2625917A1 (en) * | 1975-06-19 | 1976-12-30 | Asea Ab | SEMI-CONDUCTOR ARRANGEMENT |
FR2331155A1 (en) * | 1975-11-05 | 1977-06-03 | Licentia Gmbh | THYRISTOR CAPABLE OF BEING INTO LIGHT |
FR2367354A1 (en) * | 1976-10-08 | 1978-05-05 | Bbc Brown Boveri & Cie | THYRISTOR WITH TRANSMITTER SHORT CIRCUITS AND ITS APPLICATION |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5020608U (en) * | 1973-06-19 | 1975-03-08 | ||
JPS5291384A (en) * | 1976-01-22 | 1977-08-01 | Westinghouse Electric Corp | Semiconductor switching element |
-
1979
- 1979-04-23 JP JP4918379A patent/JPS54152477A/en active Pending
- 1979-04-24 FR FR7910326A patent/FR2424630B1/en not_active Expired
- 1979-04-24 BR BR7902521A patent/BR7902521A/en unknown
- 1979-04-24 GB GB7914297A patent/GB2019650B/en not_active Expired
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2109508A1 (en) * | 1971-03-01 | 1972-09-07 | Gen Electric | Thyristor |
DE2140993A1 (en) * | 1971-08-16 | 1973-03-01 | Siemens Ag | THYRISTOR |
FR2149405A1 (en) * | 1971-08-16 | 1973-03-30 | Siemens Ag | |
US3958268A (en) * | 1973-05-08 | 1976-05-18 | Hitachi, Ltd. | Thyristor highly proof against time rate of change of voltage |
FR2244265A1 (en) * | 1973-09-13 | 1975-04-11 | Siemens Ag | |
DE2625917A1 (en) * | 1975-06-19 | 1976-12-30 | Asea Ab | SEMI-CONDUCTOR ARRANGEMENT |
FR2331155A1 (en) * | 1975-11-05 | 1977-06-03 | Licentia Gmbh | THYRISTOR CAPABLE OF BEING INTO LIGHT |
FR2367354A1 (en) * | 1976-10-08 | 1978-05-05 | Bbc Brown Boveri & Cie | THYRISTOR WITH TRANSMITTER SHORT CIRCUITS AND ITS APPLICATION |
Also Published As
Publication number | Publication date |
---|---|
FR2424630B1 (en) | 1985-06-07 |
JPS54152477A (en) | 1979-11-30 |
GB2019650A (en) | 1979-10-31 |
GB2019650B (en) | 1982-07-07 |
BR7902521A (en) | 1979-10-30 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |