FR2424630A1 - THYRISTOR PERFECTS AND MANUFACTURING PROCESS - Google Patents

THYRISTOR PERFECTS AND MANUFACTURING PROCESS

Info

Publication number
FR2424630A1
FR2424630A1 FR7910326A FR7910326A FR2424630A1 FR 2424630 A1 FR2424630 A1 FR 2424630A1 FR 7910326 A FR7910326 A FR 7910326A FR 7910326 A FR7910326 A FR 7910326A FR 2424630 A1 FR2424630 A1 FR 2424630A1
Authority
FR
France
Prior art keywords
thyristor
perfects
manufacturing process
region
alignment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7910326A
Other languages
French (fr)
Other versions
FR2424630B1 (en
Inventor
Victor Alfred Keith Temple
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of FR2424630A1 publication Critical patent/FR2424630A1/en
Application granted granted Critical
Publication of FR2424630B1 publication Critical patent/FR2424630B1/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66363—Thyristors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1012—Base regions of thyristors
    • H01L29/102—Cathode base regions of thyristors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41716—Cathode or anode electrodes for thyristors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7428—Thyristor-type devices, e.g. having four-zone regenerative action having an amplifying gate structure, e.g. cascade (Darlington) configuration

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Thyristors (AREA)
  • Bipolar Transistors (AREA)

Abstract

L'INVENTION CONCERNE LES SEMI-CONDUCTEURS. POUR OBTENIR UN POTENTIEL UNIFORME LE LONG DE LA LIGNE D'AMORCAGE 42 D'UN THYRISTOR, ON FORME UNE REGION D'ALIGNEMENT 50 DU MEME TYPE DE CONDUCTIVITE QUE LA ZONE D'EMETTEUR 32. LE BORD INTERIEUR 52 DE LA REGION 50 ET LA LIGNE D'AMORCAGE 42 FORMENT DES CERCLES CONCENTRIQUES. CETTE STRUCTURE PERMET DE COMPENSER UN DEFAUT D'ALIGNEMENT ENTRE LES MASQUES QUE L'ON UTILISE RESPECTIVEMENT POUR FORMER L'EMETTEUR 32 ET LA GACHETTE 62. APPLICATION AUX THYRISTORS.THE INVENTION CONCERNS SEMICONDUCTORS. TO OBTAIN A UNIFORM POTENTIAL ALONG THE FIRING LINE 42 OF A THYRISTOR, AN ALIGNMENT REGION 50 IS FORMED OF THE SAME TYPE OF CONDUCTIVITY AS THE EMITTER ZONE 32. THE INNER EDGE 52 OF THE REGION 50 AND THE PRIMER LINE 42 FORM CONCENTRIC CIRCLES. THIS STRUCTURE ALLOWS TO COMPENSATE FOR AN ALIGNMENT FAULT BETWEEN THE MASKS THAT ARE USED RESPECTIVELY TO TRAIN THE TRANSMITTER 32 AND THE TRIGGER 62. APPLICATION TO THYRISTORS.

FR7910326A 1978-04-24 1979-04-24 IMPROVED THYRISTOR AND MANUFACTURING METHOD Expired FR2424630B1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US89930978A 1978-04-24 1978-04-24

Publications (2)

Publication Number Publication Date
FR2424630A1 true FR2424630A1 (en) 1979-11-23
FR2424630B1 FR2424630B1 (en) 1985-06-07

Family

ID=25410764

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7910326A Expired FR2424630B1 (en) 1978-04-24 1979-04-24 IMPROVED THYRISTOR AND MANUFACTURING METHOD

Country Status (4)

Country Link
JP (1) JPS54152477A (en)
BR (1) BR7902521A (en)
FR (1) FR2424630B1 (en)
GB (1) GB2019650B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4994885A (en) * 1988-07-01 1991-02-19 Sanken Electric Co., Ltd. Bidirectional triode thyristor
JPH09181092A (en) * 1995-12-27 1997-07-11 Toshiba Corp Semiconductor device and manufacture thereof

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2109508A1 (en) * 1971-03-01 1972-09-07 Gen Electric Thyristor
DE2140993A1 (en) * 1971-08-16 1973-03-01 Siemens Ag THYRISTOR
FR2149405A1 (en) * 1971-08-16 1973-03-30 Siemens Ag
FR2244265A1 (en) * 1973-09-13 1975-04-11 Siemens Ag
US3958268A (en) * 1973-05-08 1976-05-18 Hitachi, Ltd. Thyristor highly proof against time rate of change of voltage
DE2625917A1 (en) * 1975-06-19 1976-12-30 Asea Ab SEMI-CONDUCTOR ARRANGEMENT
FR2331155A1 (en) * 1975-11-05 1977-06-03 Licentia Gmbh THYRISTOR CAPABLE OF BEING INTO LIGHT
FR2367354A1 (en) * 1976-10-08 1978-05-05 Bbc Brown Boveri & Cie THYRISTOR WITH TRANSMITTER SHORT CIRCUITS AND ITS APPLICATION

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5020608U (en) * 1973-06-19 1975-03-08
JPS5291384A (en) * 1976-01-22 1977-08-01 Westinghouse Electric Corp Semiconductor switching element

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2109508A1 (en) * 1971-03-01 1972-09-07 Gen Electric Thyristor
DE2140993A1 (en) * 1971-08-16 1973-03-01 Siemens Ag THYRISTOR
FR2149405A1 (en) * 1971-08-16 1973-03-30 Siemens Ag
US3958268A (en) * 1973-05-08 1976-05-18 Hitachi, Ltd. Thyristor highly proof against time rate of change of voltage
FR2244265A1 (en) * 1973-09-13 1975-04-11 Siemens Ag
DE2625917A1 (en) * 1975-06-19 1976-12-30 Asea Ab SEMI-CONDUCTOR ARRANGEMENT
FR2331155A1 (en) * 1975-11-05 1977-06-03 Licentia Gmbh THYRISTOR CAPABLE OF BEING INTO LIGHT
FR2367354A1 (en) * 1976-10-08 1978-05-05 Bbc Brown Boveri & Cie THYRISTOR WITH TRANSMITTER SHORT CIRCUITS AND ITS APPLICATION

Also Published As

Publication number Publication date
FR2424630B1 (en) 1985-06-07
JPS54152477A (en) 1979-11-30
GB2019650A (en) 1979-10-31
GB2019650B (en) 1982-07-07
BR7902521A (en) 1979-10-30

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Legal Events

Date Code Title Description
ST Notification of lapse