BR7407742D0 - Processo para espalhar impurezas ativas em substratos semicondutores - Google Patents

Processo para espalhar impurezas ativas em substratos semicondutores

Info

Publication number
BR7407742D0
BR7407742D0 BR7742/74A BR774274A BR7407742D0 BR 7407742 D0 BR7407742 D0 BR 7407742D0 BR 7742/74 A BR7742/74 A BR 7742/74A BR 774274 A BR774274 A BR 774274A BR 7407742 D0 BR7407742 D0 BR 7407742D0
Authority
BR
Brazil
Prior art keywords
semiconductor substrates
active impurities
spread active
spread
impurities
Prior art date
Application number
BR7742/74A
Other languages
English (en)
Portuguese (pt)
Inventor
R Quinn
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Publication of BR7407742D0 publication Critical patent/BR7407742D0/pt

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02211—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
    • H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251—Diffusion into or out of group IV semiconductors
    • H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
    • H01L21/2255—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer comprising oxides only, e.g. P2O5, PSG, H3BO3, doped oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Ceramic Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Formation Of Insulating Films (AREA)
BR7742/74A 1973-09-17 1974-09-17 Processo para espalhar impurezas ativas em substratos semicondutores BR7407742D0 (pt)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US39810273A 1973-09-17 1973-09-17

Publications (1)

Publication Number Publication Date
BR7407742D0 true BR7407742D0 (pt) 1975-07-15

Family

ID=23573993

Family Applications (1)

Application Number Title Priority Date Filing Date
BR7742/74A BR7407742D0 (pt) 1973-09-17 1974-09-17 Processo para espalhar impurezas ativas em substratos semicondutores

Country Status (9)

Country Link
JP (1) JPS5132422B2 (it)
BR (1) BR7407742D0 (it)
CH (1) CH574678A5 (it)
DE (1) DE2439535A1 (it)
FR (1) FR2246066B1 (it)
GB (1) GB1464734A (it)
IT (1) IT1020140B (it)
NL (1) NL7412217A (it)
SE (1) SE402182B (it)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5220763A (en) * 1975-08-08 1977-02-16 Matsushita Electric Ind Co Ltd Impurity diffusion system
US4152824A (en) * 1977-12-30 1979-05-08 Mobil Tyco Solar Energy Corporation Manufacture of solar cells
JPS5919461B2 (ja) * 1978-12-13 1984-05-07 株式会社日立製作所 シリコン半導体装置の製造方法
JPS56148868A (en) * 1980-04-18 1981-11-18 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
JPS61121326A (ja) * 1984-11-19 1986-06-09 Oki Electric Ind Co Ltd 半導体装置の製造方法
DE4013929C2 (de) * 1989-05-02 1995-12-07 Toshiba Kawasaki Kk Verfahren zum Einbringen von Störstoffen in eine Halbleitermaterial-Schicht beim Herstellen eines Halbleiterbauelements und Anwendung des Verfahrens
EP0598438A1 (en) * 1992-11-17 1994-05-25 Koninklijke Philips Electronics N.V. Method for diffusing a dopant into a semiconductor
DE19908400A1 (de) * 1999-02-26 2000-09-07 Bosch Gmbh Robert Verfahren zur Herstellung hochdotierter Halbleiterbauelemente
WO2020197864A1 (en) * 2019-03-22 2020-10-01 Lam Research Corporation Method for providing doped silicon

Also Published As

Publication number Publication date
DE2439535A1 (de) 1975-07-03
GB1464734A (en) 1977-02-16
SE7411498L (it) 1975-03-18
IT1020140B (it) 1977-12-20
JPS5057776A (it) 1975-05-20
NL7412217A (nl) 1975-03-19
SE402182B (sv) 1978-06-19
CH574678A5 (it) 1976-04-15
FR2246066A1 (it) 1975-04-25
FR2246066B1 (it) 1976-12-31
JPS5132422B2 (it) 1976-09-13

Similar Documents

Publication Publication Date Title
BR7407150D0 (pt) Processo para estabilizar poliester-imida
BR6915448D0 (pt) Processo para produzir antibioticos estaveis
BR7407834D0 (pt) Processo para fazer polieterimida
BR7603799A (pt) Processo para desespumar sistemas aquosos
BR7602684A (pt) Aperfeicoamento em processo para fazer um material composto para mancal
BR7104782D0 (pt) Aperfeicoamento em processo para preparar emulsoes de halogeneto de prata diretas-positivas
BR7017795D0 (pt) Processo para remover material soluvel
BR7407742D0 (pt) Processo para espalhar impurezas ativas em substratos semicondutores
BR7401018D0 (pt) Processo para preparar vidro fosforoso
BR7400995D0 (pt) Aperfeicoamento em processo para coagular latices sinteticos
BR7403335D0 (pt) Processo para fazer xilose e xilitol
BR7017778D0 (pt) Processo para preparar novos cristais de acidos modificados
BR7410821D0 (pt) Processo para preparar poliolefinas
BR7409804A (pt) Processo para produzir aglomerados de peroxido-carbonato de sodio,e composicao de peroxido-carbonato de sodio em forma de aglomerados
BR7404280D0 (pt) Aperfeicoamento em processo para preparar gas de coqueira purificado
BR7409987A (pt) Processo para preparar alfa-amino-alcoois
BR7409333A (pt) Aperfeicoamento em processo para isomerizacao
BR7606287A (pt) Aperfeicoamentos em processo para preparar um anti-endurecedor
BR7310149D0 (pt) Aperfeicoamento em processo para aumentar o rendimento de casulos
BR7405072D0 (pt) Processo para preparar triacetonamina
BR7409959A (pt) Processo para preparar tetra-hidro-furano
BR7402446D0 (pt) Aperfeicoamento em processo para preparar 2-benzimidazol-tiol
BR6915419D0 (pt) Processo para preparar compostos quimicos heterociclicos
BR7504833A (pt) Processo para preparar poli-(-n-alquiliminoalanos)
BR7016716D0 (pt) Processo para produzir um efeito anti-depressor