BR7404510A - Aperfeicoamento em dispositivo semicondutor obstrutor schottky e processo de fabricacao de estrutura de eletrodo obstrutor schottky - Google Patents
Aperfeicoamento em dispositivo semicondutor obstrutor schottky e processo de fabricacao de estrutura de eletrodo obstrutor schottkyInfo
- Publication number
- BR7404510A BR7404510A BR4510/74A BR451074A BR7404510A BR 7404510 A BR7404510 A BR 7404510A BR 4510/74 A BR4510/74 A BR 4510/74A BR 451074 A BR451074 A BR 451074A BR 7404510 A BR7404510 A BR 7404510A
- Authority
- BR
- Brazil
- Prior art keywords
- obstructor
- schottky
- improvement
- electrode structure
- structure process
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/60—Schottky-barrier diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
- H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
- H10D30/6738—Schottky barrier electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/675—Group III-V materials, Group II-VI materials, Group IV-VI materials, selenium or tellurium
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
-
- H10D64/0124—
-
- H10D64/0125—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/60—Electrodes characterised by their materials
- H10D64/64—Electrodes comprising a Schottky barrier to a semiconductor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H10P14/69393—
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/056—Gallium arsenide
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/139—Schottky barrier
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US404303A US3886580A (en) | 1973-10-09 | 1973-10-09 | Tantalum-gallium arsenide schottky barrier semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| BR7404510A true BR7404510A (pt) | 1976-02-10 |
Family
ID=23599071
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BR4510/74A BR7404510A (pt) | 1973-10-09 | 1974-05-31 | Aperfeicoamento em dispositivo semicondutor obstrutor schottky e processo de fabricacao de estrutura de eletrodo obstrutor schottky |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US3886580A (enExample) |
| JP (1) | JPS5116288B2 (enExample) |
| BR (1) | BR7404510A (enExample) |
| CA (1) | CA992221A (enExample) |
| DE (1) | DE2436449C3 (enExample) |
| FR (1) | FR2246980B1 (enExample) |
| GB (1) | GB1446406A (enExample) |
| IT (1) | IT1013254B (enExample) |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5136878A (en) * | 1974-09-14 | 1976-03-27 | Tokyo Shibaura Electric Co | Handotaisochi no seizohoho |
| JPS51141584A (en) * | 1975-06-02 | 1976-12-06 | Toshiba Corp | A semiconductor unit |
| GB1485015A (en) * | 1974-10-29 | 1977-09-08 | Mullard Ltd | Semi-conductor device manufacture |
| JPS5850428B2 (ja) * | 1975-04-16 | 1983-11-10 | 株式会社東芝 | メサ型半導体装置 |
| US4201604A (en) * | 1975-08-13 | 1980-05-06 | Raytheon Company | Process for making a negative resistance diode utilizing spike doping |
| US4075650A (en) * | 1976-04-09 | 1978-02-21 | Cutler-Hammer, Inc. | Millimeter wave semiconductor device |
| US4307132A (en) * | 1977-12-27 | 1981-12-22 | International Business Machines Corp. | Method for fabricating a contact on a semiconductor substrate by depositing an aluminum oxide diffusion barrier layer |
| US4179533A (en) * | 1978-04-25 | 1979-12-18 | The United States Of America As Represented By The Secretary Of The Navy | Multi-refractory films for gallium arsenide devices |
| US4312113A (en) * | 1978-10-23 | 1982-01-26 | Eaton Corporation | Method of making field-effect transistors with micron and submicron gate lengths |
| US4379005A (en) * | 1979-10-26 | 1983-04-05 | International Business Machines Corporation | Semiconductor device fabrication |
| DE3005302C2 (de) * | 1980-02-13 | 1985-12-12 | Telefunken electronic GmbH, 7100 Heilbronn | Varaktor- oder Mischerdiode |
| DE3005301C2 (de) * | 1980-02-13 | 1985-11-21 | Telefunken electronic GmbH, 7100 Heilbronn | Varaktor- oder Mischerdiode |
| US4468682A (en) * | 1981-11-12 | 1984-08-28 | Gte Laboratories Incorporated | Self-aligned high-frequency static induction transistor |
| US4474623A (en) * | 1982-04-26 | 1984-10-02 | Raytheon Company | Method of passivating a semiconductor body |
| JPS6081859A (ja) * | 1983-10-11 | 1985-05-09 | Matsushita Electric Ind Co Ltd | シヨツトキ−障壁半導体装置 |
| US4935805A (en) * | 1988-05-16 | 1990-06-19 | Eaton Corporation | T-type undercut electrical contact on a semiconductor substrate |
| US4923827A (en) * | 1988-05-16 | 1990-05-08 | Eaton Corporation | T-type undercut electrical contact process on a semiconductor substrate |
| US5622877A (en) * | 1993-03-02 | 1997-04-22 | Ramot University Authority For Applied Research & Industrial Development Ltd. | Method for making high-voltage high-speed gallium arsenide power Schottky diode |
| WO1998056039A1 (en) * | 1997-06-03 | 1998-12-10 | University Of Utah Research Foundation | Utilizing inherent rectifying characteristics of a substrate in semiconductor devices |
| KR100586948B1 (ko) * | 2004-01-19 | 2006-06-07 | 삼성전기주식회사 | 질화물 반도체 발광소자 및 그 제조방법 |
| US7834367B2 (en) * | 2007-01-19 | 2010-11-16 | Cree, Inc. | Low voltage diode with reduced parasitic resistance and method for fabricating |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB967002A (en) * | 1961-05-05 | 1964-08-19 | Standard Telephones Cables Ltd | Improvements in or relating to semiconductor devices |
| US3615929A (en) * | 1965-07-08 | 1971-10-26 | Texas Instruments Inc | Method of forming epitaxial region of predetermined thickness and article of manufacture |
| US3672984A (en) * | 1969-03-12 | 1972-06-27 | Hitachi Ltd | Method of forming the electrode of a semiconductor device |
| US3663279A (en) * | 1969-11-19 | 1972-05-16 | Bell Telephone Labor Inc | Passivated semiconductor devices |
| US3756924A (en) * | 1971-04-01 | 1973-09-04 | Texas Instruments Inc | Method of fabricating a semiconductor device |
| US3701931A (en) * | 1971-05-06 | 1972-10-31 | Ibm | Gold tantalum-nitrogen high conductivity metallurgy |
| US3717563A (en) * | 1971-06-09 | 1973-02-20 | Ibm | Method of adhering gold to an insulating layer on a semiconductor substrate |
-
1973
- 1973-10-09 US US404303A patent/US3886580A/en not_active Expired - Lifetime
-
1974
- 1974-05-13 CA CA199,683A patent/CA992221A/en not_active Expired
- 1974-05-20 FR FR7417434A patent/FR2246980B1/fr not_active Expired
- 1974-05-27 IT IT7451226A patent/IT1013254B/it active
- 1974-05-31 BR BR4510/74A patent/BR7404510A/pt unknown
- 1974-07-29 DE DE2436449A patent/DE2436449C3/de not_active Expired
- 1974-10-09 JP JP49115732A patent/JPS5116288B2/ja not_active Expired
- 1974-10-09 GB GB4378474A patent/GB1446406A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| FR2246980A1 (enExample) | 1975-05-02 |
| DE2436449B2 (de) | 1977-04-21 |
| FR2246980B1 (enExample) | 1978-01-13 |
| US3886580A (en) | 1975-05-27 |
| IT1013254B (it) | 1977-03-30 |
| GB1446406A (en) | 1976-08-18 |
| JPS5067560A (enExample) | 1975-06-06 |
| CA992221A (en) | 1976-06-29 |
| JPS5116288B2 (enExample) | 1976-05-22 |
| DE2436449A1 (de) | 1975-04-24 |
| DE2436449C3 (de) | 1980-06-19 |
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