BR7404510A - Aperfeicoamento em dispositivo semicondutor obstrutor schottky e processo de fabricacao de estrutura de eletrodo obstrutor schottky - Google Patents

Aperfeicoamento em dispositivo semicondutor obstrutor schottky e processo de fabricacao de estrutura de eletrodo obstrutor schottky

Info

Publication number
BR7404510A
BR7404510A BR4510/74A BR451074A BR7404510A BR 7404510 A BR7404510 A BR 7404510A BR 4510/74 A BR4510/74 A BR 4510/74A BR 451074 A BR451074 A BR 451074A BR 7404510 A BR7404510 A BR 7404510A
Authority
BR
Brazil
Prior art keywords
obstructor
schottky
improvement
electrode structure
structure process
Prior art date
Application number
BR4510/74A
Other languages
English (en)
Portuguese (pt)
Inventor
J Calviello
Original Assignee
Cutler Hammer Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cutler Hammer Inc filed Critical Cutler Hammer Inc
Publication of BR7404510A publication Critical patent/BR7404510A/pt

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
    • H01L21/28581—Deposition of Schottky electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
    • H01L21/28587—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds characterised by the sectional shape, e.g. T, inverted T
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6738—Schottky barrier electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/675—Group III-V materials, Group II-VI materials, Group IV-VI materials, selenium or tellurium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/64—Electrodes comprising a Schottky barrier to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H01L21/02183—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing tantalum, e.g. Ta2O5
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/056—Gallium arsenide
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/139—Schottky barrier

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
BR4510/74A 1973-10-09 1974-05-31 Aperfeicoamento em dispositivo semicondutor obstrutor schottky e processo de fabricacao de estrutura de eletrodo obstrutor schottky BR7404510A (pt)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US404303A US3886580A (en) 1973-10-09 1973-10-09 Tantalum-gallium arsenide schottky barrier semiconductor device

Publications (1)

Publication Number Publication Date
BR7404510A true BR7404510A (pt) 1976-02-10

Family

ID=23599071

Family Applications (1)

Application Number Title Priority Date Filing Date
BR4510/74A BR7404510A (pt) 1973-10-09 1974-05-31 Aperfeicoamento em dispositivo semicondutor obstrutor schottky e processo de fabricacao de estrutura de eletrodo obstrutor schottky

Country Status (8)

Country Link
US (1) US3886580A (enrdf_load_html_response)
JP (1) JPS5116288B2 (enrdf_load_html_response)
BR (1) BR7404510A (enrdf_load_html_response)
CA (1) CA992221A (enrdf_load_html_response)
DE (1) DE2436449C3 (enrdf_load_html_response)
FR (1) FR2246980B1 (enrdf_load_html_response)
GB (1) GB1446406A (enrdf_load_html_response)
IT (1) IT1013254B (enrdf_load_html_response)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5136878A (en) * 1974-09-14 1976-03-27 Tokyo Shibaura Electric Co Handotaisochi no seizohoho
JPS51141584A (en) * 1975-06-02 1976-12-06 Toshiba Corp A semiconductor unit
GB1485015A (en) * 1974-10-29 1977-09-08 Mullard Ltd Semi-conductor device manufacture
JPS5850428B2 (ja) * 1975-04-16 1983-11-10 株式会社東芝 メサ型半導体装置
US4201604A (en) * 1975-08-13 1980-05-06 Raytheon Company Process for making a negative resistance diode utilizing spike doping
US4075650A (en) * 1976-04-09 1978-02-21 Cutler-Hammer, Inc. Millimeter wave semiconductor device
US4307132A (en) * 1977-12-27 1981-12-22 International Business Machines Corp. Method for fabricating a contact on a semiconductor substrate by depositing an aluminum oxide diffusion barrier layer
US4179533A (en) * 1978-04-25 1979-12-18 The United States Of America As Represented By The Secretary Of The Navy Multi-refractory films for gallium arsenide devices
US4312113A (en) * 1978-10-23 1982-01-26 Eaton Corporation Method of making field-effect transistors with micron and submicron gate lengths
US4379005A (en) * 1979-10-26 1983-04-05 International Business Machines Corporation Semiconductor device fabrication
DE3005302C2 (de) * 1980-02-13 1985-12-12 Telefunken electronic GmbH, 7100 Heilbronn Varaktor- oder Mischerdiode
DE3005301C2 (de) * 1980-02-13 1985-11-21 Telefunken electronic GmbH, 7100 Heilbronn Varaktor- oder Mischerdiode
US4468682A (en) * 1981-11-12 1984-08-28 Gte Laboratories Incorporated Self-aligned high-frequency static induction transistor
US4474623A (en) * 1982-04-26 1984-10-02 Raytheon Company Method of passivating a semiconductor body
JPS6081859A (ja) * 1983-10-11 1985-05-09 Matsushita Electric Ind Co Ltd シヨツトキ−障壁半導体装置
US4923827A (en) * 1988-05-16 1990-05-08 Eaton Corporation T-type undercut electrical contact process on a semiconductor substrate
US4935805A (en) * 1988-05-16 1990-06-19 Eaton Corporation T-type undercut electrical contact on a semiconductor substrate
US5622877A (en) * 1993-03-02 1997-04-22 Ramot University Authority For Applied Research & Industrial Development Ltd. Method for making high-voltage high-speed gallium arsenide power Schottky diode
WO1998056039A1 (en) * 1997-06-03 1998-12-10 University Of Utah Research Foundation Utilizing inherent rectifying characteristics of a substrate in semiconductor devices
KR100586948B1 (ko) * 2004-01-19 2006-06-07 삼성전기주식회사 질화물 반도체 발광소자 및 그 제조방법
US7834367B2 (en) * 2007-01-19 2010-11-16 Cree, Inc. Low voltage diode with reduced parasitic resistance and method for fabricating

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB967002A (en) * 1961-05-05 1964-08-19 Standard Telephones Cables Ltd Improvements in or relating to semiconductor devices
US3615929A (en) * 1965-07-08 1971-10-26 Texas Instruments Inc Method of forming epitaxial region of predetermined thickness and article of manufacture
US3672984A (en) * 1969-03-12 1972-06-27 Hitachi Ltd Method of forming the electrode of a semiconductor device
US3663279A (en) * 1969-11-19 1972-05-16 Bell Telephone Labor Inc Passivated semiconductor devices
US3756924A (en) * 1971-04-01 1973-09-04 Texas Instruments Inc Method of fabricating a semiconductor device
US3701931A (en) * 1971-05-06 1972-10-31 Ibm Gold tantalum-nitrogen high conductivity metallurgy
US3717563A (en) * 1971-06-09 1973-02-20 Ibm Method of adhering gold to an insulating layer on a semiconductor substrate

Also Published As

Publication number Publication date
GB1446406A (en) 1976-08-18
JPS5067560A (enrdf_load_html_response) 1975-06-06
FR2246980B1 (enrdf_load_html_response) 1978-01-13
DE2436449C3 (de) 1980-06-19
IT1013254B (it) 1977-03-30
FR2246980A1 (enrdf_load_html_response) 1975-05-02
DE2436449B2 (de) 1977-04-21
DE2436449A1 (de) 1975-04-24
CA992221A (en) 1976-06-29
US3886580A (en) 1975-05-27
JPS5116288B2 (enrdf_load_html_response) 1976-05-22

Similar Documents

Publication Publication Date Title
BR7404510A (pt) Aperfeicoamento em dispositivo semicondutor obstrutor schottky e processo de fabricacao de estrutura de eletrodo obstrutor schottky
BR7407411D0 (pt) Processo para unir um primeiro corpo a um segundo corpo e dispositivo semicondutor
BR7401611D0 (pt) Processo e dispositivo de fundacoes por depressao em local aquatico
BR6915742D0 (pt) Dispositivo semicondutor
BR7104397D0 (pt) Processo de fabricacao de um dispositivo semicondutor
BR7203232D0 (pt) Um dispositivo semicondutor e processo de fabricacao do mesmo
BR7404876D0 (pt) Dispositivo semicondutor
BR7108078D0 (pt) Um dispositivo semicondutor e processo para sua fabricaca
BR7605354A (pt) Conjunto semicondutor encapsulado e passivado e processo de fabrica-lo
BR7506996A (pt) Aperfeicoamento em dispositivo semicondutor e em processo para fabrica-lo
BR6803288D0 (pt) Dispositivo semicondutor e processo para fazer o mesmo
IT1010439B (it) Processo e dispositivo di miscela zione
FR2284191A1 (fr) Contact ohmique pour semi-conducteur et son procede de realisation
BR7310275D0 (pt) Aperfeicoamento em dispositivo semicondutor de juncoes multiplas
BR7406340D0 (pt) Dispositivo semi-condutor e seu processo de fabricacao
BR6914217D0 (pt) Estrutura semicondutora e processo de sua fabricacao
BR7100996D0 (pt) Aperfeicoamento em processo de precipitacao coagulacao e redispersao de halogeneto de prata
IT1035102B (it) Processo e liquido per la sensi bilizzazione catalitica disuper fici von metallichi per la succhessiva metallizzazione senza elettricita
BR7401204D0 (pt) Aperfeicoamento em dispositivo semicondutor de circuito integrado
BR7503777A (pt) Dispositivo semicondutor e processo de fabricacao do mesm
BR6914260D0 (pt) Dispositivo semicondutor e seu processo de fabricacao
BR7308693D0 (pt) Dispositivo semicondutor
BR7202321D0 (pt) Um dispositivo semicondutor e processo de fabricacao do dispositivo
BR7310282D0 (pt) Aperfeicoamento em dispositivo semicondutor de juncoes multiplas
BR7400752D0 (pt) Um dispositivo semicondutor e processo de fabricacao do dispositivo