BR112019001869A2 - elemento de conversão fotoelétrica de tipo junção sólida, filme de perovsquita e módulo de conversão fotoelétrica - Google Patents

elemento de conversão fotoelétrica de tipo junção sólida, filme de perovsquita e módulo de conversão fotoelétrica

Info

Publication number
BR112019001869A2
BR112019001869A2 BR112019001869-7A BR112019001869A BR112019001869A2 BR 112019001869 A2 BR112019001869 A2 BR 112019001869A2 BR 112019001869 A BR112019001869 A BR 112019001869A BR 112019001869 A2 BR112019001869 A2 BR 112019001869A2
Authority
BR
Brazil
Prior art keywords
photoelectric conversion
conversion element
junction type
solid junction
perovskite film
Prior art date
Application number
BR112019001869-7A
Other languages
English (en)
Inventor
Fujinuma Naohiro
Anzai Junichiro
Satou Sachiko
Original Assignee
Sekisui Chemical Co., Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sekisui Chemical Co., Ltd filed Critical Sekisui Chemical Co., Ltd
Publication of BR112019001869A2 publication Critical patent/BR112019001869A2/pt

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/20Light-sensitive devices
    • H01G9/2027Light-sensitive devices comprising an oxide semiconductor electrode
    • H01G9/2036Light-sensitive devices comprising an oxide semiconductor electrode comprising mixed oxides, e.g. ZnO covered TiO2 particles
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264Inorganic materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/20Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising organic-organic junctions, e.g. donor-acceptor junctions
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80Constructional details
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/10Organic photovoltaic [PV] modules; Arrays of single organic PV cells
    • H10K39/12Electrical configurations of PV cells, e.g. series connections or parallel connections
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/50Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/50Photovoltaic [PV] devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/50Photovoltaic [PV] devices
    • H10K30/57Photovoltaic [PV] devices comprising multiple junctions, e.g. tandem PV cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/542Dye sensitized solar cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Inorganic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Photovoltaic Devices (AREA)

Abstract

um elemento de conversão fotoelétrica de tipo junção sólida (10) que inclui uma primeira camada condutora (2), uma camada de geração de energia elétrica (4) e uma segunda camada condutora (6), as quais são laminadas nesta ordem, em que a camada de geração de energia elétrica (4) compreende: um composto de perovsquita representado por uma fórmula de composição abx3, formado por um cátion orgânico a, um cátion metálico b e um ânion de halogeneto x e um composto z não que tem estrutura de perovsquita.
BR112019001869-7A 2016-08-02 2017-08-02 elemento de conversão fotoelétrica de tipo junção sólida, filme de perovsquita e módulo de conversão fotoelétrica BR112019001869A2 (pt)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2016152161 2016-08-02
JP2016-152161 2016-08-02
PCT/JP2017/028089 WO2018025920A1 (ja) 2016-08-02 2017-08-02 固体接合型光電変換素子、ペロブスカイト膜及び光電変換モジュール

Publications (1)

Publication Number Publication Date
BR112019001869A2 true BR112019001869A2 (pt) 2019-05-07

Family

ID=61073442

Family Applications (1)

Application Number Title Priority Date Filing Date
BR112019001869-7A BR112019001869A2 (pt) 2016-08-02 2017-08-02 elemento de conversão fotoelétrica de tipo junção sólida, filme de perovsquita e módulo de conversão fotoelétrica

Country Status (7)

Country Link
US (1) US11482672B2 (pt)
EP (1) EP3496172B1 (pt)
JP (1) JP7101117B2 (pt)
CN (1) CN109564979A (pt)
BR (1) BR112019001869A2 (pt)
TW (1) TW201826554A (pt)
WO (1) WO2018025920A1 (pt)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019165144A (ja) * 2018-03-20 2019-09-26 積水化学工業株式会社 太陽電池
CN113140680B (zh) * 2021-04-21 2022-07-26 宁波大学 一种HEMA掺杂的CsPbI2Br太阳能电池及其制备方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5338846B2 (ja) 2011-04-25 2013-11-13 横浜ゴム株式会社 太陽電池集電電極形成方法、太陽電池セルおよび太陽電池モジュール
WO2013171520A1 (en) * 2012-05-18 2013-11-21 Isis Innovation Limited Optoelectronic device comprising perovskites
JP6089009B2 (ja) 2013-07-31 2017-03-01 富士フイルム株式会社 光電変換素子および太陽電池
FR3012462B1 (fr) * 2013-10-31 2016-01-01 Arkema France Compositions stables de poly (3,4-ethylenedioxythiophene) et de stabilisants anioniques a acidite limitee
WO2015092397A1 (en) 2013-12-17 2015-06-25 Isis Innovation Limited Photovoltaic device comprising a metal halide perovskite and a passivating agent
CN106170877B (zh) 2014-02-26 2018-08-31 联邦科学和工业研究组织 形成钙钛矿光敏装置的光敏层的方法
EP2966703A1 (en) * 2014-07-11 2016-01-13 Ecole Polytechnique Fédérale de Lausanne (EPFL) Template enhanced organic inorganic perovskite heterojunction photovoltaic device
GB201421133D0 (en) 2014-11-28 2015-01-14 Cambridge Entpr Ltd Electroluminescent device
US20180212086A1 (en) * 2015-07-31 2018-07-26 Sekisui Chemical Co., Ltd. Solar cell
WO2017121984A1 (en) * 2016-01-12 2017-07-20 Sheffield Hallam University Photoactive polymer-perovskite composite materials

Also Published As

Publication number Publication date
WO2018025920A1 (ja) 2018-02-08
JPWO2018025920A1 (ja) 2019-06-06
EP3496172B1 (en) 2021-10-13
CN109564979A (zh) 2019-04-02
EP3496172A1 (en) 2019-06-12
JP7101117B2 (ja) 2022-07-14
EP3496172A4 (en) 2020-03-18
US20210193929A1 (en) 2021-06-24
TW201826554A (zh) 2018-07-16
US11482672B2 (en) 2022-10-25

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Legal Events

Date Code Title Description
B11A Dismissal acc. art.33 of ipl - examination not requested within 36 months of filing
B11Y Definitive dismissal - extension of time limit for request of examination expired [chapter 11.1.1 patent gazette]
B350 Update of information on the portal [chapter 15.35 patent gazette]