BR112018075596A2 - arquitetura de célula padrão para difusão baseada em contagem de nadadeira - Google Patents

arquitetura de célula padrão para difusão baseada em contagem de nadadeira

Info

Publication number
BR112018075596A2
BR112018075596A2 BR112018075596-6A BR112018075596A BR112018075596A2 BR 112018075596 A2 BR112018075596 A2 BR 112018075596A2 BR 112018075596 A BR112018075596 A BR 112018075596A BR 112018075596 A2 BR112018075596 A2 BR 112018075596A2
Authority
BR
Brazil
Prior art keywords
cells
logic
diffusion
diffusion regions
fin
Prior art date
Application number
BR112018075596-6A
Other languages
English (en)
Other versions
BR112018075596B1 (pt
Inventor
Correale Anthony Jr.
Bowers Benjamin
Della Rova Tracey
Goodall William Iii
Original Assignee
Qualcomm Incorporated
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qualcomm Incorporated filed Critical Qualcomm Incorporated
Publication of BR112018075596A2 publication Critical patent/BR112018075596A2/pt
Publication of BR112018075596B1 publication Critical patent/BR112018075596B1/pt

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8238—Complementary field-effect transistors, e.g. CMOS
    • H01L21/823807—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the channel structures, e.g. channel implants, halo or pocket implants, or channel materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0207—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F30/00—Computer-aided design [CAD]
    • G06F30/30—Circuit design
    • G06F30/39—Circuit design at the physical level
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F30/00—Computer-aided design [CAD]
    • G06F30/30—Circuit design
    • G06F30/39—Circuit design at the physical level
    • G06F30/392—Floor-planning or layout, e.g. partitioning or placement
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F30/00—Computer-aided design [CAD]
    • G06F30/30—Circuit design
    • G06F30/39—Circuit design at the physical level
    • G06F30/394—Routing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/535—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including internal interconnections, e.g. cross-under constructions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/0886—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate including transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0924—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors including transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/118—Masterslice integrated circuits
    • H01L27/11803—Masterslice integrated circuits using field effect technology
    • H01L27/11807—CMOS gate arrays
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2119/00—Details relating to the type or aim of the analysis or the optimisation
    • G06F2119/18—Manufacturability analysis or optimisation for manufacturability

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Theoretical Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Geometry (AREA)
  • Evolutionary Computation (AREA)
  • Architecture (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Manufacturing & Machinery (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Error Detection And Correction (AREA)
  • Data Exchanges In Wide-Area Networks (AREA)
  • Peptides Or Proteins (AREA)

Abstract

sistemas e métodos divulgados referem-se a circuitos integrados baseados em finfet projetados com arquiteturas de célula de lógica que suportam várias regiões de difusão tipo n (503, 504) e difusões tipo p (501, 502). as diferentes regiões de difusão de cada célula de lógica podem ter diferentes larguras ou contagens de nadadeira. o encosto de duas células de lógica é habilitado com base em contagens de nadadeira como para as regiões de difusão p e regiões de difusão n correspondentes das duas células de lógica. preenchimentos de difusão são utilizados nas bordas comuns (570) entre as duas células de lógica para estender comprimentos de difusão, com base nas contagens de nadadeira semelhantes. as arquiteturas de célula de lógica suportam redundância de via e a capacidade para controlar seletivamente tensões limite de diferentes células de lógica com personalização de implante. células com altura de meia fileira podem ser intercaladas com células com altura de fileira inteira padrão.
BR112018075596-6A 2016-06-22 2017-06-22 Método para projetar um circuito integrado com células lógicas baseadas em finfets e memória legível por computador BR112018075596B1 (pt)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201662353536P 2016-06-22 2016-06-22
US62/353,536 2016-06-22
US15/629,728 2017-06-21
US15/629,728 US10366196B2 (en) 2016-06-22 2017-06-21 Standard cell architecture for diffusion based on fin count
PCT/US2017/038730 WO2018013315A1 (en) 2016-06-22 2017-06-22 Standard cell architecture for diffusion based on fin count

Publications (2)

Publication Number Publication Date
BR112018075596A2 true BR112018075596A2 (pt) 2019-03-26
BR112018075596B1 BR112018075596B1 (pt) 2023-09-19

Family

ID=

Also Published As

Publication number Publication date
US10366196B2 (en) 2019-07-30
US20170371995A1 (en) 2017-12-28
KR102083190B1 (ko) 2020-03-02
KR102528329B1 (ko) 2023-05-02
US10236302B2 (en) 2019-03-19
CN109314109B (zh) 2023-08-11
US20170373090A1 (en) 2017-12-28
BR112018075720A2 (pt) 2019-03-26
CN109314109A (zh) 2019-02-05
CA3024332A1 (en) 2017-12-28
CN109314110B (zh) 2023-06-13
JP2019519114A (ja) 2019-07-04
KR20190020682A (ko) 2019-03-04
EP3475983A1 (en) 2019-05-01
JP6752905B2 (ja) 2020-09-09
EP3475984A1 (en) 2019-05-01
WO2018013315A1 (en) 2018-01-18
JP2019519110A (ja) 2019-07-04
JP6972031B2 (ja) 2021-11-24
KR20190019952A (ko) 2019-02-27
WO2017223295A1 (en) 2017-12-28
CA3024332C (en) 2021-09-14
CN109314110A (zh) 2019-02-05
SG11201810054RA (en) 2019-01-30

Similar Documents

Publication Publication Date Title
BR112016022560A2 (pt) Subcélulas acoplada por uma estrutura de metalização
GB2571652A (en) Vertical transistors with merged active area regions
CL2016002438A1 (es) Metalización basada en láminas de celdas solares.
FR2980035B1 (fr) Circuit integre realise en soi comprenant des cellules adjacentes de differents types
BR112018012787A2 (pt) dielétrico de dupla camada em dispositivo de memória
WO2016137685A3 (en) Read-assist circuits for memory bit cells employing a p-type field-effect transistor (pfet) read port(s), and related memory systems and methods
BR112018074762A2 (pt) dispositivos médicos invasivos que incluem região magnética e sistemas e métodos
BR112015029020A2 (pt) célula de bateria solar do tipo de contato traseiro
BR112014002246A2 (pt) dispositivo semicondutor
BR112018003544A2 (pt) juntas de túnel magnéticas complementares empregando células mtj de bit de linha de fonte compartilhada, e métodos relacionados
AR106791A1 (es) Sistemas y métodos de rastreo de equipo de emplazamiento de pozo
WO2016137681A3 (en) P-type field-effect transistor (pfet)-based sense amplifiers for reading pfet pass-gate memory bit cells, and related memory systems and methods
BR112019006998A8 (pt) Interconexão
BR112019016822A2 (pt) dispositivo semicondutor e método de fabricação do mesmo
CO2017001525A2 (es) Recipiente y cierre y manufactura de los mismos
DK3717248T3 (da) Integrerede kredsløb med hukommelsesceller
BR112015016120A8 (pt) dispositivo de suporte e conjuntos
BR112016013305A8 (pt) inserto de corte, e, conjunto de ferramenta
BR112018075720A2 (pt) arquitetura de célula padrão para difusão baseada em contagem de nadadeira
WO2013078294A3 (en) Layouts for memory and logic circuits in a system-on-chip
EP4236078A3 (en) Continuous diffusion configurable standard cell architecture
CL2020000528A1 (es) Composiciones y uso para promover, apoyar u optimizar la mielinización de novo. (divisional solicitud 201801600)
BR112015009067A2 (pt) dispositivos de memória com células de memória de acesso aleatório magnética (mram) e estruturas associadas para conectar as células de mram
BR112018011020A2 (pt) técnicas para emparelhamento comportamental híbrido em um sistema central de contato
BR112018073586A2 (pt) sistemas e métodos para separar domínios de potência em aparelho de processamento

Legal Events

Date Code Title Description
B350 Update of information on the portal [chapter 15.35 patent gazette]
B06W Patent application suspended after preliminary examination (for patents with searches from other patent authorities) chapter 6.23 patent gazette]
B07A Application suspended after technical examination (opinion) [chapter 7.1 patent gazette]
B09A Decision: intention to grant [chapter 9.1 patent gazette]
B16A Patent or certificate of addition of invention granted [chapter 16.1 patent gazette]

Free format text: PRAZO DE VALIDADE: 20 (VINTE) ANOS CONTADOS A PARTIR DE 22/06/2017, OBSERVADAS AS CONDICOES LEGAIS