BR112018011919A2 - gerador de tensão de referência de temperatura compensada que imprime tensões controladas através dos resistores - Google Patents

gerador de tensão de referência de temperatura compensada que imprime tensões controladas através dos resistores

Info

Publication number
BR112018011919A2
BR112018011919A2 BR112018011919A BR112018011919A BR112018011919A2 BR 112018011919 A2 BR112018011919 A2 BR 112018011919A2 BR 112018011919 A BR112018011919 A BR 112018011919A BR 112018011919 A BR112018011919 A BR 112018011919A BR 112018011919 A2 BR112018011919 A2 BR 112018011919A2
Authority
BR
Brazil
Prior art keywords
temperature compensated
reference voltage
resistors
prints
voltage generator
Prior art date
Application number
BR112018011919A
Other languages
English (en)
Portuguese (pt)
Inventor
Morgan Rasmus Todd
Original Assignee
Qualcomm Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qualcomm Inc filed Critical Qualcomm Inc
Publication of BR112018011919A2 publication Critical patent/BR112018011919A2/pt

Links

Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/26—Current mirrors
    • G05F3/262—Current mirrors using field-effect transistors only
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/22—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the bipolar type only
    • G05F3/222—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the bipolar type only with compensation for device parameters, e.g. Early effect, gain, manufacturing process, or external variations, e.g. temperature, loading, supply voltage
    • G05F3/225—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the bipolar type only with compensation for device parameters, e.g. Early effect, gain, manufacturing process, or external variations, e.g. temperature, loading, supply voltage producing a current or voltage as a predetermined function of the temperature
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G05F3/242—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G05F3/242—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
    • G05F3/245—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage producing a voltage or current as a predetermined function of the temperature
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/26—Current mirrors
    • G05F3/267—Current mirrors using both bipolar and field-effect technology
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/30—Regulators using the difference between the base-emitter voltages of two bipolar transistors operating at different current densities

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Power Engineering (AREA)
  • Control Of Electrical Variables (AREA)
  • Dc-Dc Converters (AREA)
BR112018011919A 2015-12-15 2016-11-21 gerador de tensão de referência de temperatura compensada que imprime tensões controladas através dos resistores BR112018011919A2 (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/970,265 US9898029B2 (en) 2015-12-15 2015-12-15 Temperature-compensated reference voltage generator that impresses controlled voltages across resistors
PCT/US2016/063139 WO2017105796A1 (en) 2015-12-15 2016-11-21 Temperature-compensated reference voltage generator that impresses controlled voltages across resistors

Publications (1)

Publication Number Publication Date
BR112018011919A2 true BR112018011919A2 (pt) 2018-11-27

Family

ID=57544532

Family Applications (1)

Application Number Title Priority Date Filing Date
BR112018011919A BR112018011919A2 (pt) 2015-12-15 2016-11-21 gerador de tensão de referência de temperatura compensada que imprime tensões controladas através dos resistores

Country Status (9)

Country Link
US (1) US9898029B2 (https=)
EP (1) EP3391171B1 (https=)
JP (1) JP6800979B2 (https=)
KR (1) KR102579232B1 (https=)
CN (1) CN108369428B (https=)
BR (1) BR112018011919A2 (https=)
CA (1) CA3003912A1 (https=)
TW (1) TWI643049B (https=)
WO (1) WO2017105796A1 (https=)

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US10222817B1 (en) * 2017-09-29 2019-03-05 Cavium, Llc Method and circuit for low voltage current-mode bandgap
TWI651609B (zh) * 2017-02-09 2019-02-21 新唐科技股份有限公司 低電壓鎖定電路及其整合參考電壓產生電路之裝置
CN109617410B (zh) * 2018-12-28 2024-01-19 中国电子科技集团公司第五十八研究所 一种新型浮动电压检测电路
TWI716323B (zh) * 2019-06-04 2021-01-11 極創電子股份有限公司 電壓產生器
US11127437B2 (en) * 2019-10-01 2021-09-21 Macronix International Co., Ltd. Managing startups of bandgap reference circuits in memory systems
EP3812873B1 (en) * 2019-10-24 2025-02-26 NXP USA, Inc. Voltage reference generation with compensation for temperature variation
US11233513B2 (en) * 2019-11-05 2022-01-25 Mediatek Inc. Reference voltage buffer with settling enhancement
TWI792977B (zh) * 2022-04-11 2023-02-11 立錡科技股份有限公司 具有高次溫度補償功能的參考訊號產生電路
US11815927B1 (en) * 2022-05-19 2023-11-14 Changxin Memory Technologies, Inc. Bandgap reference circuit and chip
US12591263B2 (en) * 2023-05-25 2026-03-31 Silicon Laboratories Inc. Voltage and current reference circuits providing voltage and currents with near zero temperature coefficients
US12267071B2 (en) * 2023-06-01 2025-04-01 Allegro Microsystems, Llc Desaturation circuit having temperature compensation

Family Cites Families (18)

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JPS6017316A (ja) * 1983-07-08 1985-01-29 Canon Inc 温度補償回路
JP3586073B2 (ja) * 1997-07-29 2004-11-10 株式会社東芝 基準電圧発生回路
US6891358B2 (en) 2002-12-27 2005-05-10 Analog Devices, Inc. Bandgap voltage reference circuit with high power supply rejection ratio (PSRR) and curvature correction
US7119528B1 (en) * 2005-04-26 2006-10-10 International Business Machines Corporation Low voltage bandgap reference with power supply rejection
US7636010B2 (en) * 2007-09-03 2009-12-22 Elite Semiconductor Memory Technology Inc. Process independent curvature compensation scheme for bandgap reference
US7612606B2 (en) 2007-12-21 2009-11-03 Analog Devices, Inc. Low voltage current and voltage generator
US7750728B2 (en) 2008-03-25 2010-07-06 Analog Devices, Inc. Reference voltage circuit
TWI377461B (en) * 2008-05-15 2012-11-21 Pixart Imaging Inc Reference voltage adjustment circuits for temperature compensation and related transmitter devices
CN101923366B (zh) 2009-06-17 2012-10-03 中国科学院微电子研究所 带熔丝校准的cmos带隙基准电压源
CN101630176B (zh) * 2009-07-28 2011-11-16 中国科学院微电子研究所 低电压cmos带隙基准电压源
US8536854B2 (en) 2010-09-30 2013-09-17 Cirrus Logic, Inc. Supply invariant bandgap reference system
CN102236359B (zh) * 2010-02-22 2015-07-29 塞瑞斯逻辑公司 不随电源变化的带隙参考系统
TWI400884B (zh) * 2010-05-28 2013-07-01 Macronix Int Co Ltd 時鐘積體電路
TWI473433B (zh) * 2011-10-21 2015-02-11 Macronix Int Co Ltd 時鐘積體電路
US8941369B2 (en) 2012-03-19 2015-01-27 Sandisk Technologies Inc. Curvature compensated band-gap design trimmable at a single temperature
US8937468B2 (en) * 2012-08-13 2015-01-20 Northrop Grumman Systems Corporation Power supply systems and methods
TWI521326B (zh) * 2013-12-27 2016-02-11 慧榮科技股份有限公司 帶隙參考電壓產生電路
EP2897021B1 (en) * 2014-01-21 2020-04-29 Dialog Semiconductor (UK) Limited An apparatus and method for a low voltage reference and oscillator

Also Published As

Publication number Publication date
JP6800979B2 (ja) 2020-12-16
CN108369428A (zh) 2018-08-03
JP2018537789A (ja) 2018-12-20
EP3391171B1 (en) 2024-02-14
CN108369428B (zh) 2020-01-14
CA3003912A1 (en) 2017-06-22
KR20180095523A (ko) 2018-08-27
KR102579232B1 (ko) 2023-09-14
TWI643049B (zh) 2018-12-01
EP3391171A1 (en) 2018-10-24
US9898029B2 (en) 2018-02-20
TW201725468A (zh) 2017-07-16
WO2017105796A1 (en) 2017-06-22
US20170168518A1 (en) 2017-06-15

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Legal Events

Date Code Title Description
B06U Preliminary requirement: requests with searches performed by other patent offices: procedure suspended [chapter 6.21 patent gazette]
B07A Application suspended after technical examination (opinion) [chapter 7.1 patent gazette]
B09B Patent application refused [chapter 9.2 patent gazette]
B12B Appeal against refusal [chapter 12.2 patent gazette]