BR112018006065A2 - capacitor de metal-óxido-metal (mom) com acoplamento magnético reduzido com o circuito vizinho e frequência de ressonância em série alta - Google Patents

capacitor de metal-óxido-metal (mom) com acoplamento magnético reduzido com o circuito vizinho e frequência de ressonância em série alta

Info

Publication number
BR112018006065A2
BR112018006065A2 BR112018006065A BR112018006065A BR112018006065A2 BR 112018006065 A2 BR112018006065 A2 BR 112018006065A2 BR 112018006065 A BR112018006065 A BR 112018006065A BR 112018006065 A BR112018006065 A BR 112018006065A BR 112018006065 A2 BR112018006065 A2 BR 112018006065A2
Authority
BR
Brazil
Prior art keywords
metal
mom
oxide
capacitor
resonance frequency
Prior art date
Application number
BR112018006065A
Other languages
English (en)
Inventor
Farazian Mohammad
Yang Tan
Hung Tsai-Pi
Jin Zhang
Original Assignee
Qualcomm Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qualcomm Inc filed Critical Qualcomm Inc
Publication of BR112018006065A2 publication Critical patent/BR112018006065A2/pt

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
    • H01L23/5223—Capacitor integral with wiring layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5227—Inductive arrangements or effects of, or between, wiring layers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/004—Capacitive coupling circuits not otherwise provided for
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/528—Geometry or layout of the interconnection structure
    • H01L23/5286—Arrangements of power or ground buses

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Geometry (AREA)
  • Ceramic Capacitors (AREA)

Abstract

capacitores tipo metal-óxido-metal (mom) incluem um primeiro terminal configurado para receber uma primeira voltagem, o primeiro terminal sendo formado em uma primeira camada dielétrica; um primeiro conjunto de extensões formado na primeira camada dielétrica, o primeiro conjunto de extensões sendo acoplado ao primeiro terminal através de um traço condutor formado em uma segunda camada dielétrica; um segundo terminal configurado para receber a segunda voltagem, o segundo terminal sendo formado na primeira camada dielétrica; e um segundo conjunto de extensões formado na primeira camada dielétrica, o segundo conjunto de extensões sendo acoplado ao segundo terminal, onde as extensões do segundo conjunto são intercaladas com as extensões do primeiro conjunto.
BR112018006065A 2015-09-25 2016-09-12 capacitor de metal-óxido-metal (mom) com acoplamento magnético reduzido com o circuito vizinho e frequência de ressonância em série alta BR112018006065A2 (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/866,111 US10026685B2 (en) 2015-09-25 2015-09-25 Metal-oxide-metal (MOM) capacitor with reduced magnetic coupling to neighboring circuit and high series resonance frequency
PCT/US2016/051358 WO2017053120A1 (en) 2015-09-25 2016-09-12 Metal-oxide-metal (mom) capacitor with reduced magnetic coupling to neighboring circuit and high series resonance frequency

Publications (1)

Publication Number Publication Date
BR112018006065A2 true BR112018006065A2 (pt) 2018-10-09

Family

ID=56997564

Family Applications (1)

Application Number Title Priority Date Filing Date
BR112018006065A BR112018006065A2 (pt) 2015-09-25 2016-09-12 capacitor de metal-óxido-metal (mom) com acoplamento magnético reduzido com o circuito vizinho e frequência de ressonância em série alta

Country Status (7)

Country Link
US (1) US10026685B2 (pt)
EP (1) EP3353804B1 (pt)
JP (1) JP2018534767A (pt)
KR (1) KR20180054835A (pt)
CN (1) CN108140633B (pt)
BR (1) BR112018006065A2 (pt)
WO (1) WO2017053120A1 (pt)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10643985B2 (en) * 2017-12-15 2020-05-05 Qualcomm Incorporated Capacitor array overlapped by on-chip inductor/transformer
EP3514828B1 (en) 2018-01-19 2021-08-25 Socionext Inc. Semiconductor integrated circuitry
US10600731B2 (en) * 2018-02-20 2020-03-24 Qualcomm Incorporated Folded metal-oxide-metal capacitor overlapped by on-chip inductor/transformer
KR20200077672A (ko) * 2018-12-20 2020-07-01 삼성전자주식회사 고효율 커패시터 구조체
US12117556B2 (en) * 2021-06-28 2024-10-15 Texas Instruments Incorporated Field-aware metal fills for integrated circuit passive components

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003297930A (ja) 2002-03-29 2003-10-17 Gurinikusu:Kk 櫛型キャパシタ
GB2398169B (en) 2003-02-06 2006-02-22 Zarlink Semiconductor Ltd An electrical component structure
US6924967B1 (en) 2004-04-30 2005-08-02 Alan Devoe Noninterdigitated mounting for interdigitated stacked capacitor and method
KR100919337B1 (ko) * 2005-05-18 2009-09-25 파나소닉 주식회사 디지털 신호 처리 장치
KR100616687B1 (ko) 2005-06-17 2006-08-28 삼성전기주식회사 적층형 칩 커패시터
DE102005046734B4 (de) 2005-09-29 2011-06-16 Infineon Technologies Ag Halbleiterbauelement mit integrierter Kapazitätsstruktur
WO2007046173A1 (ja) 2005-10-18 2007-04-26 Murata Manufacturing Co., Ltd. 薄膜キャパシタ
US7760485B1 (en) 2006-11-09 2010-07-20 Scientific Components Corporation Low loss and high frequency lumped capacitor
JP4357577B2 (ja) 2007-06-14 2009-11-04 太陽誘電株式会社 コンデンサ及びその製造方法
US20100177457A1 (en) 2009-01-10 2010-07-15 Simon Edward Willard Interdigital capacitor with Self-Canceling Inductance
JP5726609B2 (ja) 2011-04-15 2015-06-03 富士通セミコンダクター株式会社 容量素子および半導体装置
US20130320494A1 (en) * 2012-06-01 2013-12-05 Qualcomm Incorporated Metal finger capacitors with hybrid metal finger orientations in stack with unidirectional metal layers
JP6133688B2 (ja) * 2013-05-27 2017-05-24 ルネサスエレクトロニクス株式会社 半導体装置
US9270247B2 (en) 2013-11-27 2016-02-23 Xilinx, Inc. High quality factor inductive and capacitive circuit structure

Also Published As

Publication number Publication date
KR20180054835A (ko) 2018-05-24
US20170093362A1 (en) 2017-03-30
CN108140633A (zh) 2018-06-08
EP3353804A1 (en) 2018-08-01
JP2018534767A (ja) 2018-11-22
US10026685B2 (en) 2018-07-17
WO2017053120A1 (en) 2017-03-30
EP3353804B1 (en) 2020-03-11
CN108140633B (zh) 2021-06-15

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Legal Events

Date Code Title Description
B11A Dismissal acc. art.33 of ipl - examination not requested within 36 months of filing
B11Y Definitive dismissal acc. article 33 of ipl - extension of time limit for request of examination expired