BR112015031202A2 - gerenciamento de apagamento em sistemas de memória - Google Patents

gerenciamento de apagamento em sistemas de memória

Info

Publication number
BR112015031202A2
BR112015031202A2 BR112015031202A BR112015031202A BR112015031202A2 BR 112015031202 A2 BR112015031202 A2 BR 112015031202A2 BR 112015031202 A BR112015031202 A BR 112015031202A BR 112015031202 A BR112015031202 A BR 112015031202A BR 112015031202 A2 BR112015031202 A2 BR 112015031202A2
Authority
BR
Brazil
Prior art keywords
data
storage cells
computer processor
processor hardware
erase
Prior art date
Application number
BR112015031202A
Other languages
English (en)
Other versions
BR112015031202B1 (pt
Inventor
J Pelster David
Guo Xin
B Wakchaure Yogesh
Original Assignee
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corp filed Critical Intel Corp
Priority to BR122018075830-9A priority Critical patent/BR122018075830B1/pt
Publication of BR112015031202A2 publication Critical patent/BR112015031202A2/pt
Publication of BR112015031202B1 publication Critical patent/BR112015031202B1/pt

Links

Classifications

    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02—Addressing or allocation; Relocation
    • G06F12/0223—User address space allocation, e.g. contiguous or non contiguous base addressing
    • G06F12/023—Free address space management
    • G06F12/0238—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory
    • G06F12/0246—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory in block erasable memory, e.g. flash memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5628—Programming or writing circuits; Data input circuits
    • G11C11/5635—Erasing circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/102—External programming circuits, e.g. EPROM programmers; In-circuit programming or reprogramming; EPROM emulators
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/32—Timing circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/349—Arrangements for evaluating degradation, retention or wearout, e.g. by counting erase cycles
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/349—Arrangements for evaluating degradation, retention or wearout, e.g. by counting erase cycles
    • G11C16/3495—Circuits or methods to detect or delay wearout of nonvolatile EPROM or EEPROM memory devices, e.g. by counting numbers of erase or reprogram cycles, by using multiple memory areas serially or cyclically
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
    • G06F2212/10—Providing a specific technical effect
    • G06F2212/1032—Reliability improvement, data loss prevention, degraded operation etc
    • G06F2212/1036—Life time enhancement
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
    • G06F2212/72—Details relating to flash memory management
    • G06F2212/7204—Capacity control, e.g. partitioning, end-of-life degradation
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
    • G06F2212/72—Details relating to flash memory management
    • G06F2212/7205—Cleaning, compaction, garbage collection, erase control
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
    • G06F2212/72—Details relating to flash memory management
    • G06F2212/7207—Details relating to flash memory management management of metadata or control data
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
    • G06F2212/72—Details relating to flash memory management
    • G06F2212/7208—Multiple device management, e.g. distributing data over multiple flash devices
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
    • G06F2212/72—Details relating to flash memory management
    • G06F2212/7209—Validity control, e.g. using flags, time stamps or sequence numbers
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
    • G06F2212/72—Details relating to flash memory management
    • G06F2212/7211—Wear leveling
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Read Only Memory (AREA)
  • Information Retrieval, Db Structures And Fs Structures Therefor (AREA)

Abstract

trata-se de um hardware de processador de computador que recebe notificação de que os dados armazenados em uma região de células de armazenamento em um sistema de memória não volátil armazenam dados inválidos. em resposta à notificação, o hardware de processador de computador marca a região como armazenando dados inválidos. o hardware de processador de computador controla a magnitude de tempo de espera de apagamento (isto é, a quantidade de tempo que uma ou mais células são configuradas para um estado apagado) associado à substituição dos dados inválidos nas células de armazenamento com dados de substituição. por exemplo, para reprogramar as respectivas células de armazenamento, o gerenciador de dados deve apagar as células de armazenamento e então programar as células de armazenamento com dados de substituição. a lógica de gerenciamento de dados pode controlar o tempo de espera de apagamento, de modo que o mesmo seja um valor de tempo limítrofe para melhorar uma vida útil do sistema de memória não volátil.
BR112015031202-0A 2013-07-16 2014-07-16 Método, aparelho para armazenar dados, sistema de computador e sistema para gerenciamento de apagamento em sistemas de memória BR112015031202B1 (pt)

Priority Applications (1)

Application Number Priority Date Filing Date Title
BR122018075830-9A BR122018075830B1 (pt) 2013-07-16 2014-07-16 Sistema de memória, sistema de computador e meio legível por computador não-transitório

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/943,762 US9483397B2 (en) 2013-07-16 2013-07-16 Erase management in memory systems
US13/943,762 2013-07-16
PCT/US2014/046849 WO2015009827A1 (en) 2013-07-16 2014-07-16 Erase management in memory systems

Publications (2)

Publication Number Publication Date
BR112015031202A2 true BR112015031202A2 (pt) 2017-07-25
BR112015031202B1 BR112015031202B1 (pt) 2022-06-14

Family

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Family Applications (2)

Application Number Title Priority Date Filing Date
BR122018075830-9A BR122018075830B1 (pt) 2013-07-16 2014-07-16 Sistema de memória, sistema de computador e meio legível por computador não-transitório
BR112015031202-0A BR112015031202B1 (pt) 2013-07-16 2014-07-16 Método, aparelho para armazenar dados, sistema de computador e sistema para gerenciamento de apagamento em sistemas de memória

Family Applications Before (1)

Application Number Title Priority Date Filing Date
BR122018075830-9A BR122018075830B1 (pt) 2013-07-16 2014-07-16 Sistema de memória, sistema de computador e meio legível por computador não-transitório

Country Status (8)

Country Link
US (1) US9483397B2 (pt)
EP (2) EP3022740B1 (pt)
JP (1) JP6112595B2 (pt)
KR (1) KR101686376B1 (pt)
CN (2) CN105340020B (pt)
BR (2) BR122018075830B1 (pt)
RU (1) RU2638006C2 (pt)
WO (1) WO2015009827A1 (pt)

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Also Published As

Publication number Publication date
EP3489956A1 (en) 2019-05-29
JP6112595B2 (ja) 2017-04-12
EP3022740A4 (en) 2017-03-08
US9483397B2 (en) 2016-11-01
EP3022740B1 (en) 2019-03-06
WO2015009827A1 (en) 2015-01-22
RU2015154180A (ru) 2017-06-21
KR101686376B1 (ko) 2016-12-13
CN105340020A (zh) 2016-02-17
CN110047546B (zh) 2023-04-04
JP2016525240A (ja) 2016-08-22
RU2638006C2 (ru) 2017-12-08
CN105340020B (zh) 2019-08-20
BR112015031202B1 (pt) 2022-06-14
EP3022740A1 (en) 2016-05-25
US20150026386A1 (en) 2015-01-22
EP3489956B1 (en) 2021-09-08
KR20160003720A (ko) 2016-01-11
CN110047546A (zh) 2019-07-23
BR122018075830B1 (pt) 2023-11-07

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