BR112015013928A2 - fabricação de eletrodos tridimensionais com área de superfície elevada - Google Patents

fabricação de eletrodos tridimensionais com área de superfície elevada

Info

Publication number
BR112015013928A2
BR112015013928A2 BR112015013928A BR112015013928A BR112015013928A2 BR 112015013928 A2 BR112015013928 A2 BR 112015013928A2 BR 112015013928 A BR112015013928 A BR 112015013928A BR 112015013928 A BR112015013928 A BR 112015013928A BR 112015013928 A2 BR112015013928 A2 BR 112015013928A2
Authority
BR
Brazil
Prior art keywords
surface area
high surface
dimensional electrodes
manufacture
pillars
Prior art date
Application number
BR112015013928A
Other languages
English (en)
Inventor
Scherer Axel
Mujeeb-U-Rahman Muhammad
Original Assignee
California Inst Of Techn
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by California Inst Of Techn filed Critical California Inst Of Techn
Publication of BR112015013928A2 publication Critical patent/BR112015013928A2/pt

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
    • B81C1/00111—Tips, pillars, i.e. raised structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L24/14—Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/387—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
    • A61B2562/00—Details of sensors; Constructional details of sensor housings or probes; Accessories for sensors
    • A61B2562/12—Manufacturing methods specially adapted for producing sensors for in-vivo measurements
    • A61B2562/125—Manufacturing methods specially adapted for producing sensors for in-vivo measurements characterised by the manufacture of electrodes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0214—Biosensors; Chemical sensors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/04—Electrodes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2207/00—Microstructural systems or auxiliary parts thereof
    • B81B2207/01—Microstructural systems or auxiliary parts thereof comprising a micromechanical device connected to control or processing electronics, i.e. Smart-MEMS
    • B81B2207/015—Microstructural systems or auxiliary parts thereof comprising a micromechanical device connected to control or processing electronics, i.e. Smart-MEMS the micromechanical device and the control or processing electronics being integrated on the same substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00349—Creating layers of material on a substrate
    • B81C1/0038—Processes for creating layers of materials not provided for in groups B81C1/00357 - B81C1/00373
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00—Forming microstructural systems
    • B81C2203/07—Integrating an electronic processing unit with a micromechanical structure
    • B81C2203/0707—Monolithic integration, i.e. the electronic processing unit is formed on or in the same substrate as the micromechanical structure
    • B81C2203/0714—Forming the micromechanical structure with a CMOS process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02425—Conductive materials, e.g. metallic silicides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/14—Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
    • H01L2224/1401—Structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Analytical Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electromagnetism (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Micromachines (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Physical Vapour Deposition (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)

Abstract

resumo “fabricação de eletrodos tridimensionais com área de superfície elevada” a invenção diz respeito a um método para fabricar eletrodos tridimensionais com superfície elevada. os métodos incluindo as etapas: projetar os pilares; selecio-nar um material para a formação dos pilares; padronizar o material; transferir o pa-drão para formar os pilares; isolar os pilares e proporcionar uma camada de metal para condutividade aumentada. métodos alternativos para fabricação dos eletrodos e para a fabricação dos eletrodos utilizando cmos também são descritos.
BR112015013928A 2012-12-13 2013-12-13 fabricação de eletrodos tridimensionais com área de superfície elevada BR112015013928A2 (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201261736944P 2012-12-13 2012-12-13
PCT/US2013/075192 WO2014093938A1 (en) 2012-12-13 2013-12-13 Fabrication of three-dimensional high surface area electrodes

Publications (1)

Publication Number Publication Date
BR112015013928A2 true BR112015013928A2 (pt) 2017-07-11

Family

ID=50929978

Family Applications (1)

Application Number Title Priority Date Filing Date
BR112015013928A BR112015013928A2 (pt) 2012-12-13 2013-12-13 fabricação de eletrodos tridimensionais com área de superfície elevada

Country Status (11)

Country Link
US (2) US9006014B2 (pt)
EP (1) EP2932526A4 (pt)
JP (1) JP6433430B2 (pt)
KR (1) KR20150097572A (pt)
CN (1) CN104981894A (pt)
AU (1) AU2013358894A1 (pt)
BR (1) BR112015013928A2 (pt)
IL (1) IL239318A0 (pt)
MX (1) MX2015007315A (pt)
RU (1) RU2015122434A (pt)
WO (1) WO2014093938A1 (pt)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10376146B2 (en) 2013-02-06 2019-08-13 California Institute Of Technology Miniaturized implantable electrochemical sensor devices
US11707375B2 (en) 2013-05-28 2023-07-25 Qfix Systems, Llc Head and jaw immobilization device
CN104766802B (zh) * 2015-03-26 2019-05-03 深圳市华星光电技术有限公司 液晶显示面板、阵列基板及其薄膜晶体管的制造方法
US10368788B2 (en) 2015-07-23 2019-08-06 California Institute Of Technology System and methods for wireless drug delivery on command
US10507466B2 (en) * 2016-04-27 2019-12-17 International Business Machines Corporation Metal assisted chemical etching for fabricating high aspect ratio and straight silicon nanopillar arrays for sorting applications
CN109116454B (zh) * 2017-06-26 2020-08-11 清华大学 光栅的制备方法
US11109784B2 (en) * 2018-04-09 2021-09-07 California Institute Of Technology Metal-enzyme sandwich layers
WO2022031693A1 (en) * 2020-08-03 2022-02-10 Neuroone Medical Technologies Corporation Methods for making probe devices and related devices
EP4326665A1 (en) * 2021-04-20 2024-02-28 Magic Leap, Inc. Ultrasonication nano-geometry control process and methods
EP4312766A4 (en) 2021-09-01 2024-06-05 Integrated Medical Sensors Inc WIRED IMPLANTABLE MONOLITHIC INTEGRATED SENSOR CIRCUIT

Family Cites Families (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR940009628B1 (ko) * 1991-11-16 1994-10-15 삼성전자 주식회사 커패시터 및 그 제조방법
US5482882A (en) * 1994-03-18 1996-01-09 United Microelectronics Corporation Method for forming most capacitor using polysilicon islands
JPH1074710A (ja) * 1996-08-30 1998-03-17 Ricoh Co Ltd 半導体装置の製造方法及びスパッタ装置
JPH10121237A (ja) * 1996-10-11 1998-05-12 Sony Corp スパッタ装置
US6001067A (en) 1997-03-04 1999-12-14 Shults; Mark C. Device and method for determining analyte levels
US7657297B2 (en) 2004-05-03 2010-02-02 Dexcom, Inc. Implantable analyte sensor
US6259937B1 (en) 1997-09-12 2001-07-10 Alfred E. Mann Foundation Implantable substrate sensor
US5999849A (en) 1997-09-12 1999-12-07 Alfred E. Mann Foundation Low power rectifier circuit for implantable medical device
GB9907815D0 (en) 1999-04-06 1999-06-02 Univ Cambridge Tech Implantable sensor
US6504292B1 (en) * 1999-07-15 2003-01-07 Agere Systems Inc. Field emitting device comprising metallized nanostructures and method for making the same
US6864802B2 (en) 2000-09-01 2005-03-08 Ut-Battelle, Llc Wireless spread-spectrum telesensor chip with synchronous digital architecture
EP1374309A1 (en) * 2001-03-30 2004-01-02 The Regents Of The University Of California Methods of fabricating nanostructures and nanowires and devices fabricated therefrom
US6858521B2 (en) * 2002-12-31 2005-02-22 Samsung Electronics Co., Ltd. Method for fabricating spaced-apart nanostructures
EP1547139A4 (en) * 2002-09-30 2009-08-26 Nanosys Inc MACRO-ELECTRONIC SUBSTRATE WITH HIGH NANO-ACTIVATION SURFACE AREA AND USES THEREOF
KR20060013504A (ko) 2003-04-15 2006-02-10 센서즈 포 메드슨 앤드 사이언스 인코포레이티드 광센서에 대한 주변광의 영향을 약화시키기 위한 시스템 및방법
KR100537101B1 (ko) 2003-12-27 2005-12-16 동부아남반도체 주식회사 수직형 트랜지스터의 제조방법
US7348243B2 (en) * 2003-12-27 2008-03-25 Dongbu Electronics Co., Ltd. Semiconductor device and method for fabricating the same
JP4637545B2 (ja) * 2004-11-01 2011-02-23 一般社団法人オンチップ・セロミクス・コンソーシアム Ｄｎａチップおよびｄｎａハイブリダイゼーション法
US7592255B2 (en) * 2004-12-22 2009-09-22 Hewlett-Packard Development Company, L.P. Fabricating arrays of metallic nanostructures
US7629629B2 (en) * 2004-12-28 2009-12-08 Panasonic Corporation Semiconductor nanowire and semiconductor device including the nanowire
WO2006116752A2 (en) * 2005-04-28 2006-11-02 The Regents Of The University Of California Compositions comprising nanostructures for cell, tissue and artificial organ growth, and methods for making and using same
US8118748B2 (en) 2005-04-28 2012-02-21 Medtronic, Inc. Implantable capacitive pressure sensor system and method
US20060261406A1 (en) 2005-05-18 2006-11-23 Yijian Chen Vertical integrated-gate CMOS device and its fabrication process
WO2007022359A2 (en) * 2005-08-16 2007-02-22 The Regents Of The University Of California Vertical integrated silicon nanowire field effect transistors and methods of fabrication
KR100767629B1 (ko) * 2006-01-05 2007-10-17 한국과학기술원 높은 광감도를 갖는 ｃｍｏｓ 이미지 센서 및 이의 제조방법
CN101595565B (zh) * 2006-09-18 2013-03-27 昆南诺股份有限公司 在垂直半导体结构上制造精密垂直和水平层的方法
US7821132B2 (en) * 2007-06-05 2010-10-26 Xilinx, Inc. Contact pad and method of forming a contact pad for an integrated circuit
KR20090067533A (ko) 2007-12-21 2009-06-25 주식회사 하이닉스반도체 반도체 소자 제조 방법
JP5051243B2 (ja) * 2008-02-15 2012-10-17 富士通株式会社 半導体装置の製造方法
CN101946304B (zh) * 2008-02-20 2013-06-05 Nxp股份有限公司 包括在衬底的两个面上形成的平面形状电容器的超高密度容量
KR20090098285A (ko) 2008-03-13 2009-09-17 주식회사 하이닉스반도체 실리콘 성장을 이용한 수직형 반도체 소자 및 그 제조 방법
WO2009133510A1 (en) * 2008-04-29 2009-11-05 Nxp B.V. Method of manufacturing a capacitor on a nanowire and integrated circuit having such a capacitor
US20110248315A1 (en) * 2008-08-14 2011-10-13 Brookhaven Science Associates Structured pillar electrodes
CN101398382A (zh) * 2008-10-23 2009-04-01 清华大学 一种快速检测痕量五氯联苯的方法
US8332037B2 (en) 2008-11-05 2012-12-11 Incube Labs, Llc Housing structure for a medical implant including a monolithic substrate
WO2010075479A2 (en) 2008-12-22 2010-07-01 Integrated Sensing Systems, Inc. Wireless dynamic power control of an implantable sensing device and methods therefor
US8148264B2 (en) * 2009-02-25 2012-04-03 California Institue Of Technology Methods for fabrication of high aspect ratio micropillars and nanopillars
KR20120092091A (ko) * 2009-06-26 2012-08-20 캘리포니아 인스티튜트 오브 테크놀로지 페시베이팅된 실리콘 나노와이어들을 제조하기 위한 방법들 및 그에 따라 획득된 디바이스들
DK2491372T3 (da) * 2009-10-23 2021-10-18 Univ Danmarks Tekniske Overfladeforbedrede raman-spredningssubstratforbrugsvarer til raman-spektroskopi
KR101274522B1 (ko) * 2010-11-30 2013-06-13 한양대학교 산학협력단 탄소나노튜브 3차원 네트워크를 이용한 미세유체 필터 및 그 제조 방법
US9956743B2 (en) * 2010-12-20 2018-05-01 The Regents Of The University Of California Superhydrophobic and superoleophobic nanosurfaces
US8900935B2 (en) * 2011-01-25 2014-12-02 International Business Machines Corporation Deposition on a nanowire using atomic layer deposition
CN102556952B (zh) * 2012-02-14 2015-01-07 中国人民解放军国防科学技术大学 金属杯-柱复合纳米结构阵列及其制备方法
EP2864119A2 (en) * 2012-06-20 2015-04-29 Battelle Memorial Institute Two dimensional meta-material windows
US8658518B1 (en) * 2012-08-17 2014-02-25 International Business Machines Corporation Techniques for metal gate work function engineering to enable multiple threshold voltage nanowire FET devices
US9048097B2 (en) * 2012-08-22 2015-06-02 California Institute Of Technology Semiconductive micro- and nano-wire array manufacturing
US9095085B2 (en) * 2013-03-29 2015-07-28 Kinsus Interconnect Technology Corp. Method of manufacturing a stacked multilayer structure

Also Published As

Publication number Publication date
CN104981894A (zh) 2015-10-14
MX2015007315A (es) 2016-03-31
KR20150097572A (ko) 2015-08-26
RU2015122434A (ru) 2017-01-19
EP2932526A1 (en) 2015-10-21
EP2932526A4 (en) 2016-10-19
US9006014B2 (en) 2015-04-14
US20140167257A1 (en) 2014-06-19
JP2016508289A (ja) 2016-03-17
US9177933B2 (en) 2015-11-03
US20150187718A1 (en) 2015-07-02
WO2014093938A1 (en) 2014-06-19
JP6433430B2 (ja) 2018-12-05
AU2013358894A1 (en) 2015-07-02
IL239318A0 (en) 2015-07-30

Similar Documents

Publication Publication Date Title
BR112015013928A2 (pt) fabricação de eletrodos tridimensionais com área de superfície elevada
HUE045075T2 (hu) Eljárás nagy felületû szenet tartalmazó hatóanyagkészítmények elõállítására
FR2977713B1 (fr) Electrode transparente conductrice multicouche et procede de fabrication associe
FR3014013B1 (fr) Procede de fabrication d'une piece en materiau sandwich et piece realisee suivant un tel procede
FI20115488A0 (fi) Rullalta rullalle -massavalmistukseen soveltuva sähköisten siltojen valmistusmenetelmä
WO2011099831A3 (ko) 그래핀을 이용한 유연성 투명 발열체 및 이의 제조 방법
FR2982866B1 (fr) Procede de preparation d'une composition pateuse a base de charges conductrices carbonees
CL2015001233A1 (es) Compuestos heteroaromáticos fusionados; composicion farmaceutica y el uso como ligandos d1 de dopamina en el tratamiento de enfermedades tales como esquizofrenia.
FR2972441B1 (fr) Nouveau materiau fluore utilisable comme matiere active d'electrode
FR2985598B1 (fr) Composition carbonee pour electrode de cellule de supercondensateur, electrode, son procede de fabrication et cellule l'incorporant.
IN2014DN09305A (pt)
EP2919303A4 (en) ELECTRODE MATERIAL AND METHOD FOR PRODUCING AN ELECTRODE MATERIAL
FR3001409B1 (fr) Procede de fabrication d'une structure alveolaire de forme courbee en materiau composite
EP2788844A4 (en) ELECTRODE PATTERN FOR A TOUCH SCREEN AND METHOD OF MANUFACTURING THEREOF
BR112015022739A2 (pt) processo de fabricação para uma forma de dosagem efervescente
FR2978066B1 (fr) Procede de fonctionnalisation de nanofils metalliques et de fabrication d'electrodes
EP2717352A4 (en) CONDUCTIVE COMPOUND ELECTRODE AND MANUFACTURING METHOD THEREFOR
FR2996359B1 (fr) Electrode transparente conductrice et procede de fabrication associe
FR2996358B1 (fr) Electrode transparente et procede de fabrication associe
FR2975038B1 (fr) Procede de fabrication d'une piece en materiau composite et piece ainsi obtenue.
JP2013127897A5 (ja) リン酸鉄リチウム系正極活物質の製造方法
HUE063919T2 (hu) Eljárás elektród egység elõállítására
FR2989707B1 (fr) Garnissage de brique de construction par une matiere poreuse
IN2014DN06613A (pt)
PT2855410T (pt) Química de polímeros tensoativos à base de glicerol e a respetiva produção

Legal Events

Date Code Title Description
B08F Application dismissed because of non-payment of annual fees [chapter 8.6 patent gazette]
B08K Patent lapsed as no evidence of payment of the annual fee has been furnished to inpi [chapter 8.11 patent gazette]