BR112014007724A2 - dispositivo ferroelétrico de grafeno e controle opto-eletrônico de dispositivo de memória ferroelétrico de grafeno - Google Patents

dispositivo ferroelétrico de grafeno e controle opto-eletrônico de dispositivo de memória ferroelétrico de grafeno

Info

Publication number
BR112014007724A2
BR112014007724A2 BR112014007724A BR112014007724A BR112014007724A2 BR 112014007724 A2 BR112014007724 A2 BR 112014007724A2 BR 112014007724 A BR112014007724 A BR 112014007724A BR 112014007724 A BR112014007724 A BR 112014007724A BR 112014007724 A2 BR112014007724 A2 BR 112014007724A2
Authority
BR
Brazil
Prior art keywords
graphene
ferroelectric
transistor channel
resistance state
voltage
Prior art date
Application number
BR112014007724A
Other languages
English (en)
Inventor
Ozyilmaz Barbaros
Tat Toh Chee
Jaiswal Manu
Kahya Orhan
Saha Surajit
Original Assignee
Nat Univ Singapore
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nat Univ Singapore filed Critical Nat Univ Singapore
Publication of BR112014007724A2 publication Critical patent/BR112014007724A2/pt

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/223—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements using MOS with ferroelectric gate insulating film
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
    • G11B9/02—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using ferroelectric record carriers; Record carriers therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/1606—Graphene
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H01L29/516—Insulating materials associated therewith with at least one ferroelectric layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/04—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/30—Resistive cell, memory material aspects
    • G11C2213/35—Material including carbon, e.g. graphite, grapheme
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/50—Resistive cell structure aspects
    • G11C2213/53—Structure wherein the resistive material being in a transistor, e.g. gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)

Abstract

abstract of the disclosure in accordance with an embodiment of the invention, there is provided a graphene ferroelectric device. the device comprises a graphene transistor channel and a ferroelectric gate of the graphene transistor channel, the ferroelectric gate comprising a linear polarization at a first applied gate voltage less than a threshold voltage, and a hysteretic polarization at a second applied gate voltage greater than the threshold voltage. the device may be configured to undergo optical switching of the graphene transistor channel between a high resistance state and a low resistance state in response to photoillumination of the device. tradução do resumo resumo patente de invenção: "dispositivo ferroelétrico de grafeno e controle opto-eletrônico de dispositivo de memória ferroelétrico de grafeno". em conformidade com uma forma de realização da invenção, é fornecido um dispositivo ferroelétrico de grafeno. o dispositivo é caracterizado pelo fato de que compreende um canal de transístor de grafeno e uma porta ferroelétrica de canal de transístor de grafeno, sendo a porta ferroelétrica caracterizada pelo fato de que compreende uma polarização linear em uma tensão de porta aplicada pela primeira vez menor do que uma tensão limite, e uma polarização histerética em uma tensão de porta aplicada pela segunda vez maior do que tensão limite. o dispositivo ferroelétrico pode ser configurado para passar por comutação óptica do canal de transístor de grafeno entre um estado de alta resistência e um estado de baixa resistência em resposta à fotoiluminação do dispositivo.
BR112014007724A 2011-09-29 2012-10-01 dispositivo ferroelétrico de grafeno e controle opto-eletrônico de dispositivo de memória ferroelétrico de grafeno BR112014007724A2 (pt)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201161540593P 2011-09-29 2011-09-29
US201161569357P 2011-12-12 2011-12-12
PCT/SG2012/000366 WO2013048347A1 (en) 2011-09-29 2012-10-01 Graphene ferroelectric device and opto-electronic control of graphene ferroelectric memory device

Publications (1)

Publication Number Publication Date
BR112014007724A2 true BR112014007724A2 (pt) 2017-04-04

Family

ID=47996104

Family Applications (1)

Application Number Title Priority Date Filing Date
BR112014007724A BR112014007724A2 (pt) 2011-09-29 2012-10-01 dispositivo ferroelétrico de grafeno e controle opto-eletrônico de dispositivo de memória ferroelétrico de grafeno

Country Status (4)

Country Link
US (1) US20140233297A1 (pt)
BR (1) BR112014007724A2 (pt)
SG (1) SG11201400809PA (pt)
WO (1) WO2013048347A1 (pt)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014178016A2 (en) * 2013-05-01 2014-11-06 Indian Institute Of Science Non-volatile opto-electronic device
US8987707B2 (en) * 2013-08-20 2015-03-24 Wisconsin Alumni Research Foundation Stretchable transistors with buckled carbon nanotube films as conducting channels
US9449851B2 (en) * 2014-08-29 2016-09-20 The Regents Of The University Of California Local doping of two-dimensional materials
EP3012847B1 (en) 2014-10-21 2018-02-14 Nokia Technologies OY A multilayer graphene composite
TWI564071B (zh) * 2015-02-09 2017-01-01 國立中山大學 結合材料粒子於石墨烯－半導體基材表面之光化學方法及半導體結構
KR102356682B1 (ko) * 2015-05-11 2022-01-27 삼성전자주식회사 2ｄ 물질을 이용한 비휘발성 메모리 소자 및 그 제조방법
US10001529B2 (en) * 2015-09-03 2018-06-19 Texas Instruments Incorporated Low-offset Graphene Hall sensor
EP3542402A4 (en) * 2016-11-21 2020-07-22 The Government of the United States of America, as represented by the Secretary of the Navy TWO-DIMENSIONAL MATERIALS INTEGRATED WITH MULTIFERROIC LAYERS
US10680105B2 (en) 2017-03-21 2020-06-09 International Business Machines Corporation Mobile ferroelectric single domain wall implementation of a symmetric resistive processing unit
CN108485090B (zh) * 2018-03-30 2021-05-25 电子科技大学中山学院 一种高阻尼橡胶及其制备方法
CN109904050B (zh) * 2019-03-13 2020-02-21 中山大学 一种铁电材料极化场调控二维原子晶体场发射的器件结构及其制备方法和应用
CN110098256B (zh) * 2019-04-24 2022-04-26 中国科学院微电子研究所 场效应晶体管及其制备方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102257610B (zh) * 2008-09-23 2014-05-21 新加坡国立大学 石墨烯存储单元及其制造方法

Also Published As

Publication number Publication date
SG11201400809PA (en) 2014-04-28
US20140233297A1 (en) 2014-08-21
WO2013048347A1 (en) 2013-04-04

Similar Documents

Publication Publication Date Title
BR112014007724A2 (pt) dispositivo ferroelétrico de grafeno e controle opto-eletrônico de dispositivo de memória ferroelétrico de grafeno
BR112013021693A2 (pt) transistor de película delgada, método de fabricação deste, e dispositivo de exibição
JP2015018264A5 (pt)
JP2012048807A5 (ja) 半導体装置
BR112015003645A2 (pt) cateter intravenoso de controle sanguíneo com propriedades antimicrobianas
JP2009049399A5 (pt)
JP2015015459A5 (pt)
AR085263A1 (es) Mecanismo de retencion
WO2012058324A3 (en) Resistance change memory cell circuits and methods
JP2013084941A5 (ja) 半導体装置
JP2013077838A5 (pt)
JP2015005734A5 (pt)
BR112014032705A2 (pt) dispositivo com mecanismo de rolo
WO2009102732A3 (en) Bridge circuits and their components
JP2013137509A5 (ja) 半導体装置及び表示装置
ATE526686T1 (de) Dünnschicht-feldeffekttransistor und anzeige
JP2011191754A5 (ja) 半導体装置
BR112013024192A2 (pt) dispositivo semicondutor e dispositivo de transistor de efeito de campo de óxido metálico
JP2007052419A5 (pt)
JP2013211088A5 (ja) 表示装置
JP2012190034A5 (ja) 半導体装置、表示装置及び電子機器
BR112014018454A8 (pt) Múltiplos elementos de energização em dispositivos de componente integrado empilhados
BRPI0813817A2 (pt) Dispositivo com persiana e elemento de reintrodução de uma persiana em uma corrediça de orientação.
JP2012256063A5 (ja) 表示装置
JP2010250305A5 (ja) 液晶表示装置

Legal Events

Date Code Title Description
B11A Dismissal acc. art.33 of ipl - examination not requested within 36 months of filing
B11Y Definitive dismissal - extension of time limit for request of examination expired [chapter 11.1.1 patent gazette]