BR102013022144A8 - Determinação de corrente quiescente utilizando medições de tensão dentro de pacote - Google Patents

Determinação de corrente quiescente utilizando medições de tensão dentro de pacote

Info

Publication number
BR102013022144A8
BR102013022144A8 BR102013022144A BR102013022144A BR102013022144A8 BR 102013022144 A8 BR102013022144 A8 BR 102013022144A8 BR 102013022144 A BR102013022144 A BR 102013022144A BR 102013022144 A BR102013022144 A BR 102013022144A BR 102013022144 A8 BR102013022144 A8 BR 102013022144A8
Authority
BR
Brazil
Prior art keywords
amplifier
quiescent current
output
voltage
package
Prior art date
Application number
BR102013022144A
Other languages
English (en)
Other versions
BR102013022144A2 (pt
Inventor
N Annes Justin
M Bokatius Mario
R Hart Paul
Staudinger Joseph
Original Assignee
Freescale Semiconductor Inc
Nxp Usa Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Freescale Semiconductor Inc, Nxp Usa Inc filed Critical Freescale Semiconductor Inc
Publication of BR102013022144A2 publication Critical patent/BR102013022144A2/pt
Publication of BR102013022144A8 publication Critical patent/BR102013022144A8/pt

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0288—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers using a main and one or several auxiliary peaking amplifiers whereby the load is connected to the main amplifier using an impedance inverter, e.g. Doherty amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • H03F1/301—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in MOSFET amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/193—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices

Abstract

DETERMINAÇÃO DE CORRENTE QUIESCENTE UTILIZANDO MEDIÇÕES DE TENSÃO DENTRO DE PACOTE. Aparelho, sistemas e métodos de fabricação são fornecidos para polarizar arranjos de amplificador dentro de pacotes de dispositivo para uma corrente quiescente alvo. Em uma modalidade, um dispositivo amplificador (102) tem uma interface de saída (109) e inclui um arranjo de amplificador (104) tendo uma saída de amplificador (107) e o circuito de correspondência de impedância (108) acoplado entre a saída de amplificador (107) e a interface de saída (109). Um método para polarizar o arranjo de amplificador (104) envolve medir ou de outro modo obter uma tensão entre a saída de amplificador (107) e a interface de saída (109), determinar uma corrente quiescente estimada através do arranjo de amplificador (104) com base nesta tensão, e ajustar uma tensão de polarização fornecida à entrada (105) do arranjo de amplificador (104) com base na diferença entre a corrente quiescente estimada. Em modalidades exemplares, a tensão de polarização é ajustada até a corrente quiescente estimada ser substancialmente igual a uma corrente quiescente alvo.
BR102013022144A 2012-09-13 2013-08-29 Determinação de corrente quiescente utilizando medições de tensão dentro de pacote BR102013022144A8 (pt)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US13/614,850 US8816775B2 (en) 2012-09-13 2012-09-13 Quiescent current determination using in-package voltage measurements

Publications (2)

Publication Number Publication Date
BR102013022144A2 BR102013022144A2 (pt) 2016-05-24
BR102013022144A8 true BR102013022144A8 (pt) 2017-10-10

Family

ID=49485474

Family Applications (1)

Application Number Title Priority Date Filing Date
BR102013022144A BR102013022144A8 (pt) 2012-09-13 2013-08-29 Determinação de corrente quiescente utilizando medições de tensão dentro de pacote

Country Status (3)

Country Link
US (1) US8816775B2 (pt)
EP (1) EP2709271B1 (pt)
BR (1) BR102013022144A8 (pt)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9136809B2 (en) * 2012-11-30 2015-09-15 Qualcomm Incorporated Digital bias adjustment in a variable supply radio frequency power amplifier
US9806681B2 (en) * 2015-02-15 2017-10-31 Skyworks Solutions, Inc. Doherty power amplifier having AM-AM compensation
US10468399B2 (en) 2015-03-31 2019-11-05 Cree, Inc. Multi-cavity package having single metal flange
WO2017044657A1 (en) * 2015-09-11 2017-03-16 Flir Systems, Inc. Automatic bias controller for a pulsed power amplifier
WO2017062427A1 (en) * 2015-10-05 2017-04-13 Skyworks Solutions, Inc. Power amplification system with adaptive bias control
US9997476B2 (en) 2015-10-30 2018-06-12 Infineon Technologies Ag Multi-die package having different types of semiconductor dies attached to the same thermally conductive flange
US9979365B2 (en) * 2015-12-17 2018-05-22 Nxp Usa, Inc. Amplifier devices with in-package bias modulation buffer
JP6589700B2 (ja) * 2016-03-09 2019-10-16 富士通株式会社 電力増幅装置および電力増幅装置の制御方法
JP6943104B2 (ja) * 2017-09-15 2021-09-29 日本電気株式会社 増幅装置、破損検出装置および破損検出方法
CN111492573A (zh) * 2017-12-29 2020-08-04 瑞典爱立信有限公司 具有自适应偏置的超线性功率放大器
US10756675B2 (en) * 2018-11-28 2020-08-25 Qorvo Us, Inc. Broadband power amplifier circuit
US11088661B2 (en) * 2019-07-19 2021-08-10 Nxp Usa, Inc. Power amplifier devices containing inverted power transistor dies and methods for the fabrication thereof
US11387169B2 (en) 2020-08-04 2022-07-12 Nxp Usa, Inc. Transistor with I/O ports in an active area of the transistor
US11502026B2 (en) 2020-10-12 2022-11-15 Nxp Usa, Inc. Transistor with flip-chip topology and power amplifier containing same
US11587852B2 (en) 2020-10-12 2023-02-21 Nxp Usa, Inc. Power amplifier modules with flip-chip and non-flip-chip power transistor dies

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4387346A (en) * 1979-08-30 1983-06-07 Fackler John D Bias circuit for a microwave transistor power amplifier
JPH02101808A (ja) * 1988-10-07 1990-04-13 Mitsubishi Electric Corp 高周波増幅回路
JPH06260864A (ja) * 1993-03-08 1994-09-16 Matsushita Electric Ind Co Ltd 送信出力増幅器
US6111464A (en) * 1999-07-23 2000-08-29 Nokia Networks Oy Amplifier having bias circuit self-compensating for VGS process variation and IDS aging
GB0028689D0 (en) * 2000-11-24 2001-01-10 Qualcomm Uk Ltd Amplifier circuit
US6639471B2 (en) * 2001-04-16 2003-10-28 Matsushita Electric Industrial Co., Ltd. Power amplifier circuit, control method for power amplifier circuit, and portable terminal apparatus for mobile communication
KR100553252B1 (ko) * 2002-02-01 2006-02-20 아바고테크놀로지스코리아 주식회사 휴대용 단말기의 전력 증폭 장치
JP4342232B2 (ja) 2003-07-11 2009-10-14 三菱電機株式会社 半導体パワーモジュールおよび該モジュールの主回路電流値を計測する主回路電流計測システム
US7315152B1 (en) 2004-08-20 2008-01-01 Rf Micro Devices, Inc. System for detecting current in an output stage of a power amplifier
JP5024057B2 (ja) * 2008-01-07 2012-09-12 三菱電機株式会社 電力増幅器
US7728671B2 (en) * 2008-01-17 2010-06-01 Infineon Technologies Ag Semiconductor power device with bias circuit
US8188794B2 (en) * 2010-03-25 2012-05-29 Lloyd Lautzenhiser Method and system for providing automatic gate bias for field effect transistors
US8154345B2 (en) 2010-06-03 2012-04-10 Skyworks Solutions, Inc. Apparatus and method for current sensing using a wire bond
JP2012129592A (ja) * 2010-12-13 2012-07-05 Mitsubishi Electric Corp 電力増幅器

Also Published As

Publication number Publication date
US20140070881A1 (en) 2014-03-13
EP2709271B1 (en) 2018-11-14
EP2709271A3 (en) 2017-08-09
EP2709271A2 (en) 2014-03-19
BR102013022144A2 (pt) 2016-05-24
US8816775B2 (en) 2014-08-26

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Legal Events

Date Code Title Description
B03A Publication of a patent application or of a certificate of addition of invention [chapter 3.1 patent gazette]
B25A Requested transfer of rights approved

Owner name: NXP USA, INC. (US)

B06F Objections, documents and/or translations needed after an examination request according [chapter 6.6 patent gazette]
B06U Preliminary requirement: requests with searches performed by other patent offices: procedure suspended [chapter 6.21 patent gazette]
B07A Application suspended after technical examination (opinion) [chapter 7.1 patent gazette]
B09B Patent application refused [chapter 9.2 patent gazette]
B09B Patent application refused [chapter 9.2 patent gazette]

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