BR0204088A - Diodo de laser azul de duas seções com declìnio de potência de saìda reduzida - Google Patents

Diodo de laser azul de duas seções com declìnio de potência de saìda reduzida

Info

Publication number
BR0204088A
BR0204088A BR0204088-3A BR0204088A BR0204088A BR 0204088 A BR0204088 A BR 0204088A BR 0204088 A BR0204088 A BR 0204088A BR 0204088 A BR0204088 A BR 0204088A
Authority
BR
Brazil
Prior art keywords
laser diode
blue laser
region
output power
reduced output
Prior art date
Application number
BR0204088-3A
Other languages
English (en)
Portuguese (pt)
Inventor
Michael A Kneissl
Thomas L Paoli
Original Assignee
Xerox Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Xerox Corp filed Critical Xerox Corp
Publication of BR0204088A publication Critical patent/BR0204088A/pt

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0265—Intensity modulators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H01S5/0287—Facet reflectivity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06251—Amplitude modulation

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Lasers (AREA)
BR0204088-3A 2001-10-09 2002-10-07 Diodo de laser azul de duas seções com declìnio de potência de saìda reduzida BR0204088A (pt)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/972,361 US6526083B1 (en) 2001-10-09 2001-10-09 Two section blue laser diode with reduced output power droop

Publications (1)

Publication Number Publication Date
BR0204088A true BR0204088A (pt) 2003-09-16

Family

ID=25519563

Family Applications (1)

Application Number Title Priority Date Filing Date
BR0204088-3A BR0204088A (pt) 2001-10-09 2002-10-07 Diodo de laser azul de duas seções com declìnio de potência de saìda reduzida

Country Status (4)

Country Link
US (2) US6526083B1 (enExample)
EP (1) EP1304778A3 (enExample)
JP (2) JP2003158334A (enExample)
BR (1) BR0204088A (enExample)

Families Citing this family (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7368421B2 (en) * 2001-06-27 2008-05-06 Probiodrug Ag Use of dipeptidyl peptidase IV inhibitors in the treatment of multiple sclerosis
US6834068B2 (en) * 2001-06-29 2004-12-21 Matsushita Electric Industrial Co., Ltd. Semiconductor laser device and method for fabricating the same
US7067849B2 (en) * 2001-07-17 2006-06-27 Lg Electronics Inc. Diode having high brightness and method thereof
US6949395B2 (en) 2001-10-22 2005-09-27 Oriol, Inc. Method of making diode having reflective layer
US7148520B2 (en) 2001-10-26 2006-12-12 Lg Electronics Inc. Diode having vertical structure and method of manufacturing the same
US6724013B2 (en) * 2001-12-21 2004-04-20 Xerox Corporation Edge-emitting nitride-based laser diode with p-n tunnel junction current injection
US20050141800A1 (en) * 2002-09-17 2005-06-30 Mitsubishi Denki Kabushiki Kaisha Waveguide semiconductor optical device and process of fabricating the device
EP1400835B1 (en) * 2002-09-17 2011-11-16 Nippon Telegraph And Telephone Corporation Semiconductor optical modulator and laser with such optical modulator
KR100493089B1 (ko) * 2002-12-17 2005-06-02 삼성전자주식회사 집적광학장치
JP2005019533A (ja) * 2003-06-24 2005-01-20 Oki Electric Ind Co Ltd 光半導体素子，及び光半導体素子の製造方法
GB0424253D0 (en) * 2004-05-20 2004-12-01 Bookham Technology Plc Laterally implanted electro-absorption modulated laser
US7751455B2 (en) 2004-12-14 2010-07-06 Palo Alto Research Center Incorporated Blue and green laser diodes with gallium nitride or indium gallium nitride cladding laser structure
US20060126157A1 (en) * 2004-12-14 2006-06-15 Electronics And Telecommunications Research Institute Monolithic integrated semiconductor modulator-SOA-LED broad band light source and method of fabricating the same
EP2797185B1 (en) * 2005-06-22 2018-09-05 MACOM Technology Solutions Holdings, Inc. AIGalnN-based lasers produced using etched facet technology
CN101882656B (zh) * 2005-10-29 2014-03-12 三星显示有限公司 半导体器件及其制造方法
GB2432456A (en) * 2005-11-21 2007-05-23 Bookham Technology Plc High power semiconductor laser diode
GB2432715A (en) * 2005-11-25 2007-05-30 Sharp Kk Nitride semiconductor light emitting devices
GB2437593A (en) * 2006-04-25 2007-10-31 Jian-Jun He A q-modulated semiconductor laser
DE102006051745B4 (de) * 2006-09-28 2024-02-08 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung LED-Halbleiterkörper und Verwendung eines LED-Halbleiterkörpers
DE102007058723A1 (de) * 2007-09-10 2009-03-12 Osram Opto Semiconductors Gmbh Lichtemittierende Struktur
JP4769905B2 (ja) * 2009-12-10 2011-09-07 Ｄｏｗａエレクトロニクス株式会社 ｐ型ＡｌＧａＮ層の製造方法およびＩＩＩ族窒化物半導体発光素子
EP2402996A1 (en) * 2010-06-30 2012-01-04 Alcatel Lucent A device comprising an active component and associated electrodes and a method of manufacturing such device
CN103891067B (zh) * 2011-11-01 2016-09-28 慧与发展有限责任合伙企业 直调式激光器
JP6032601B2 (ja) * 2011-12-21 2016-11-30 住友電工デバイス・イノベーション株式会社 半導体光増幅器の制御方法及び測定方法、並びに半導体光増幅装置
US9450152B2 (en) 2012-05-29 2016-09-20 Micron Technology, Inc. Solid state transducer dies having reflective features over contacts and associated systems and methods
DE102013226270B3 (de) * 2013-12-17 2015-04-02 Forschungsverbund Berlin E.V. Verfahren zum Ausbilden eines Metallkontakts auf einer Oberfläche eines Halbleiters und Vorrichtung mit einem Metallkontakt
US10366883B2 (en) 2014-07-30 2019-07-30 Hewlett Packard Enterprise Development Lp Hybrid multilayer device
EP3320566A4 (en) * 2015-07-10 2019-02-27 The Regents of The University of California HYBRID GROWTH PROCESS FOR III-NITRIDE TUNNEL TRANSITION DEVICES
WO2017039674A1 (en) 2015-09-03 2017-03-09 Hewlett Packard Enterprise Development Lp Defect free heterogeneous substrates
WO2017060836A1 (en) 2015-10-05 2017-04-13 King Abdullah University Of Science And Technology An apparatus comprising a waveguide-modulator and laser-diode and a method of manufacture thereof
US11088244B2 (en) 2016-03-30 2021-08-10 Hewlett Packard Enterprise Development Lp Devices having substrates with selective airgap regions
CN107664496B (zh) * 2016-07-28 2021-08-17 罗伯特·博世有限公司，香港 具有适应性热控制功能的激光标线工具
US10193634B2 (en) 2016-09-19 2019-01-29 Hewlett Packard Enterprise Development Lp Optical driver circuits
US11095097B2 (en) 2016-11-28 2021-08-17 King Abdullah University Of Science And Technology Integrated semiconductor optical amplifier and laser diode at visible wavelength
KR102621843B1 (ko) * 2016-12-23 2024-01-05 엘지이노텍 주식회사 반도체 소자 및 이를 포함하는 광 모듈
EP3379664B1 (en) * 2017-03-20 2023-06-14 Nokia Solutions and Networks Oy A laser and method of controlling a laser to output a signal intermittently
JP6932345B2 (ja) * 2017-03-27 2021-09-08 学校法人 名城大学 半導体多層膜反射鏡及び垂直共振器型発光素子
US10381801B1 (en) 2018-04-26 2019-08-13 Hewlett Packard Enterprise Development Lp Device including structure over airgap
WO2020258033A1 (zh) 2019-06-25 2020-12-30 京东方科技集团股份有限公司 发光二极管及其制作方法、显示装置
JP7480350B2 (ja) * 2020-05-12 2024-05-09 エイエムエス－オスラム インターナショナル ゲーエムベーハー ビーム放射半導体チップおよびビーム放射半導体チップの製造方法
DE102020118405A1 (de) * 2020-07-13 2022-01-27 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Strahlungsemittierender halbleiterchip und verfahren zu dessen herstellung
US12266904B2 (en) * 2021-06-02 2025-04-01 Microsoft Technology Licensing, Llc Modulator integration for laser used with display

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4088964A (en) * 1975-01-22 1978-05-09 Clow Richard G Multi-mode threshold laser
US4563765A (en) * 1982-01-29 1986-01-07 Massachusetts Institute Of Technology Intra-cavity loss-modulated diode laser
US5151915A (en) 1990-12-27 1992-09-29 Xerox Corporation Array and method of operating a modulated solid state laser array with reduced thermal crosstalk
US5267255A (en) 1992-02-25 1993-11-30 Xerox Corporation Array and method of operating a modulated solid state laser array with reduced thermal crosstalk
JP3306892B2 (ja) * 1992-02-28 2002-07-24 株式会社日立製作所 半導体光集積素子およびその製造方法
FR2706079B1 (fr) * 1993-06-02 1995-07-21 France Telecom Composant intégré monolithique laser-modulateur à structure multi-puits quantiques.
DE19624514C1 (de) * 1996-06-19 1997-07-17 Siemens Ag Laserdiode-Modulator-Kombination
DE19652529A1 (de) * 1996-12-17 1998-06-18 Siemens Ag Optoelektronisches Bauelement mit MQW-Strukturen
DE69834415T2 (de) * 1997-03-07 2006-11-16 Sharp K.K. Lichtemittierendes galliumnitridhalbleiterelement mit einer aktiven schicht mit multiplexquantentrogstruktur und halbleiterlaserlichtquellenvorrichtung
JPH10270799A (ja) * 1997-03-21 1998-10-09 Sanyo Electric Co Ltd 発光素子
JP2000312054A (ja) * 1998-04-28 2000-11-07 Sharp Corp 半導体素子の製造方法、及び半導体素子
JP2000244049A (ja) * 1999-02-19 2000-09-08 Toshiba Corp 半導体素子及びその製造方法
US6437372B1 (en) * 2000-01-07 2002-08-20 Agere Systems Guardian Corp. Diffusion barrier spikes for III-V structures
JP2001274520A (ja) * 2000-03-24 2001-10-05 Sanyo Electric Co Ltd 窒化物系半導体レーザ素子

Also Published As

Publication number Publication date
USRE40230E1 (en) 2008-04-08
JP2003158334A (ja) 2003-05-30
US6526083B1 (en) 2003-02-25
EP1304778A2 (en) 2003-04-23
JP5747241B2 (ja) 2015-07-08
EP1304778A3 (en) 2005-02-02
JP2009182346A (ja) 2009-08-13

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Legal Events

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B07A Application suspended after technical examination (opinion) [chapter 7.1 patent gazette]
B09B Patent application refused [chapter 9.2 patent gazette]

Free format text: INDEFIRO O PEDIDO DE ACORDO COM ART. 8O COMBINADO COM ART. 13 DA LPI

B09B Patent application refused [chapter 9.2 patent gazette]

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