BR0003014A - Método para depositar pelìcula de material piezoelétrico - Google Patents

Método para depositar pelìcula de material piezoelétrico

Info

Publication number
BR0003014A
BR0003014A BR0003014-7A BR0003014A BR0003014A BR 0003014 A BR0003014 A BR 0003014A BR 0003014 A BR0003014 A BR 0003014A BR 0003014 A BR0003014 A BR 0003014A
Authority
BR
Brazil
Prior art keywords
piezoelectric material
target
depositing film
depositing
bombarding
Prior art date
Application number
BR0003014-7A
Other languages
English (en)
Inventor
Harold Alexis Huggins
Original Assignee
Lucent Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lucent Technologies Inc filed Critical Lucent Technologies Inc
Publication of BR0003014A publication Critical patent/BR0003014A/pt

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
    • H10N30/076—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by vapour phase deposition
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0617—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3471—Introduction of auxiliary energy into the plasma
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Inorganic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)

Abstract

<B>MéTODO PARA DEPOSITAR PELìCULA DE MATERIAL PIEZOELéTRICO<D> Películas finas altamente orientadas que apresentam bons efeitos piezoelétricos são formadas em uma câmara de reação. Isto é feito pelo bombardeamento de um alvo que compreende um material piezoelétrtico. Partículas desalojadas do alvo são ionizadas e em seguida atraídas eletrostaticamente para a superfície de um substrato onde são neutralizadas e depositadas em um modo ordenado.
BR0003014-7A 1999-07-29 2000-07-20 Método para depositar pelìcula de material piezoelétrico BR0003014A (pt)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/363,758 US6153268A (en) 1999-07-29 1999-07-29 Method for producing oriented piezoelectric films

Publications (1)

Publication Number Publication Date
BR0003014A true BR0003014A (pt) 2001-03-13

Family

ID=23431600

Family Applications (1)

Application Number Title Priority Date Filing Date
BR0003014-7A BR0003014A (pt) 1999-07-29 2000-07-20 Método para depositar pelìcula de material piezoelétrico

Country Status (8)

Country Link
US (1) US6153268A (pt)
EP (1) EP1073197A3 (pt)
JP (1) JP2001098370A (pt)
KR (1) KR20010029980A (pt)
CN (1) CN1291825A (pt)
AU (1) AU4507200A (pt)
BR (1) BR0003014A (pt)
CA (1) CA2314302A1 (pt)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004200476A (ja) * 2002-12-19 2004-07-15 Canon Inc 圧電素子の製造方法
JP2006032485A (ja) * 2004-07-13 2006-02-02 Brother Ind Ltd 圧電膜形成方法
US20140048013A1 (en) * 2012-08-17 2014-02-20 Intermolecular, Inc. SEED LAYER FOR ZnO AND DOPED-ZnO THIN FILM NUCLEATION AND METHODS OF SEED LAYER DEPOSITION
US10483943B2 (en) 2017-06-27 2019-11-19 Globalfoundries Inc. Artificially oriented piezoelectric film for integrated filters

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3988232A (en) * 1974-06-25 1976-10-26 Matsushita Electric Industrial Co., Ltd. Method of making crystal films
US4309266A (en) * 1980-07-18 1982-01-05 Murata Manufacturing Co., Ltd. Magnetron sputtering apparatus
JPS57118022A (en) * 1981-01-12 1982-07-22 Murata Mfg Co Ltd Formation of zinc oxide film
JP3068901B2 (ja) * 1991-08-26 2000-07-24 キヤノン株式会社 薄膜作製方法
US5232571A (en) * 1991-12-23 1993-08-03 Iowa State University Research Foundation, Inc. Aluminum nitride deposition using an AlN/Al sputter cycle technique
US5344676A (en) * 1992-10-23 1994-09-06 The Board Of Trustees Of The University Of Illinois Method and apparatus for producing nanodrops and nanoparticles and thin film deposits therefrom
JPH06158274A (ja) * 1992-11-19 1994-06-07 Seiko Instr Inc 表面波素子とその製造方法
JPH1030179A (ja) * 1996-07-17 1998-02-03 Fuji Electric Co Ltd 酸化亜鉛膜の製造方法
US5948483A (en) * 1997-03-25 1999-09-07 The Board Of Trustees Of The University Of Illinois Method and apparatus for producing thin film and nanoparticle deposits

Also Published As

Publication number Publication date
EP1073197A2 (en) 2001-01-31
US6153268A (en) 2000-11-28
CA2314302A1 (en) 2001-01-29
CN1291825A (zh) 2001-04-18
KR20010029980A (ko) 2001-04-16
EP1073197A3 (en) 2002-02-06
AU4507200A (en) 2001-02-01
JP2001098370A (ja) 2001-04-10

Similar Documents

Publication Publication Date Title
NO20023071L (no) Fremgangsmåte for påföring av pulverbelegg på ikke-metalliske substrater
BRPI0511346A (pt) artigo compreendendo uma superfìcie, revestimento em multicamadas, substrato, material refletivo e sistema de revestimento em multicamadas
GB2427407B (en) Coating of a polymer layer using low power pulsed plasma in a plasma chamber of a large volume
WO2001063000A3 (en) Method and apparatus for depositing films
WO2002084702A3 (en) Sputtering deposition apparatus and method for depositing surface films
TW200605194A (en) Method and apparatus of distributed plasma processing system for conformal ion stimulated nanoscale deposition process
CA2326202A1 (en) Method and apparatus for deposition of biaxially textured coatings
EP0860513A3 (en) Thin film forming apparatus and process for forming thin film using same
AU2003246887A1 (en) Application of a coating forming material onto at least one substrate
AU2003290815A1 (en) Atomic layer deposition methods
TW263613B (en) Uniform film thickness deposition of sputtered materials
DK1198609T3 (da) Fremgangsmåde til fremstilling af en hårdmetalbelagt komponent
JPS57141930A (en) Device for formation of thin film
WO2004017356A3 (en) Process and apparatus for pulsed dc magnetron reactive sputtering of thin film coatings on large substrates using smaller sputter cathodes
PL1626433T3 (pl) Urządzenie do rozpylania magnetronowego, cylindryczna katoda i sposób nakładania cienkich warstw wieloskładnikowych na podłoże
WO2005021832A3 (en) Method and appartus for depositing materials with tunable properties
BR0003014A (pt) Método para depositar pelìcula de material piezoelétrico
WO2004018349A3 (fr) Microstructure a surface fonctionnalisee par depot localise d&#39;une couche mince et procede de fabrication associe
ATE347735T1 (de) Vorrichtung und verfahren zur beschichtung von substraten im vakuum
GB2377228A (en) Magnetron sputtering
DK0924316T3 (da) Fremgangsmåde til påföring af belægningssystemer
AU2003266908A1 (en) Method for the production of a substrate with a magnetron sputter coating and unit for the same
WO2003026026A3 (en) Synthesis of layers, coatings or films using electrostatic fields
ATE301204T1 (de) Verfahren und vorrichtung zur beschichtung von substraten
ATE173033T1 (de) Beschichtungen mit niedriger oberflächenenergie

Legal Events

Date Code Title Description
FA10 Dismissal: dismissal - article 33 of industrial property law
B11Y Definitive dismissal - extension of time limit for request of examination expired [chapter 11.1.1 patent gazette]