BE871127A - Dispositif optique a semiconducteurs comportant un revetement de verre - Google Patents

Dispositif optique a semiconducteurs comportant un revetement de verre

Info

Publication number
BE871127A
BE871127A BE191005A BE191005A BE871127A BE 871127 A BE871127 A BE 871127A BE 191005 A BE191005 A BE 191005A BE 191005 A BE191005 A BE 191005A BE 871127 A BE871127 A BE 871127A
Authority
BE
Belgium
Prior art keywords
semiconductor device
optical semiconductor
glass coating
coating
glass
Prior art date
Application number
BE191005A
Other languages
English (en)
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Publication of BE871127A publication Critical patent/BE871127A/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
    • H01B3/02—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances
    • H01B3/08—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances quartz; glass; glass wool; slag wool; vitreous enamels
    • H01B3/087—Chemical composition of glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0555—Shape
    • H01L2224/05552—Shape in top view
    • H01L2224/05553—Shape in top view being rectangular
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12042—LASER
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12043—Photo diode

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
  • Light Receiving Elements (AREA)
  • Glass Compositions (AREA)
  • Led Device Packages (AREA)
BE191005A 1977-10-11 1978-10-10 Dispositif optique a semiconducteurs comportant un revetement de verre BE871127A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US84077877A 1977-10-11 1977-10-11

Publications (1)

Publication Number Publication Date
BE871127A true BE871127A (fr) 1979-02-01

Family

ID=25283207

Family Applications (1)

Application Number Title Priority Date Filing Date
BE191005A BE871127A (fr) 1977-10-11 1978-10-10 Dispositif optique a semiconducteurs comportant un revetement de verre

Country Status (10)

Country Link
JP (1) JPS5464483A (fr)
BE (1) BE871127A (fr)
CA (1) CA1115401A (fr)
CH (1) CH635466A5 (fr)
DE (1) DE2843280A1 (fr)
FR (1) FR2406309A1 (fr)
GB (1) GB2005917B (fr)
IT (1) IT1099271B (fr)
NL (1) NL7810206A (fr)
SE (1) SE7810313L (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4751708A (en) * 1982-03-29 1988-06-14 International Business Machines Corporation Semiconductor injection lasers
JPS60217685A (ja) * 1984-04-13 1985-10-31 Hitachi Ltd 発光素子
US5488623A (en) * 1990-11-07 1996-01-30 Fuji Electric Co., Ltd. Mold-type semiconductor laser device with reduced light-emitting point displacement during operation
DE69118482T2 (de) * 1990-11-07 1996-08-22 Fuji Electric Co Ltd Laserdiode mit einer Schutzschicht auf ihrer lichtemittierenden Endfläche
US5444726A (en) * 1990-11-07 1995-08-22 Fuji Electric Co., Ltd. Semiconductor laser device
US20080049431A1 (en) * 2006-08-24 2008-02-28 Heather Debra Boek Light emitting device including anti-reflection layer(s)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR87810E (fr) * 1961-09-29 1966-05-20 Ibm Objets revêtus et procédé de réalisation de leurs revêtements protecteurs
GB1250099A (fr) * 1969-04-14 1971-10-20
US3676756A (en) * 1969-09-18 1972-07-11 Innotech Corp Insulated gate field effect device having glass gate insulator
GB1352959A (en) * 1972-11-09 1974-05-15 Standard Telephones Cables Ltd Passivation of semiconductor devices

Also Published As

Publication number Publication date
CA1115401A (fr) 1981-12-29
FR2406309B1 (fr) 1982-05-14
CH635466A5 (de) 1983-03-31
GB2005917B (en) 1982-01-20
NL7810206A (nl) 1979-04-17
DE2843280A1 (de) 1979-04-12
SE7810313L (sv) 1979-04-11
FR2406309A1 (fr) 1979-05-11
IT1099271B (it) 1985-09-18
IT7828555A0 (it) 1978-10-09
GB2005917A (en) 1979-04-25
JPS5464483A (en) 1979-05-24

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Legal Events

Date Code Title Description
RE Patent lapsed

Owner name: WESTERN ELECTRIC CY INC.

Effective date: 19841010