IT1099271B - Rivestimento vetroso per dispositivi ottici a semiconduttore - Google Patents

Rivestimento vetroso per dispositivi ottici a semiconduttore

Info

Publication number
IT1099271B
IT1099271B IT28555/78A IT2855578A IT1099271B IT 1099271 B IT1099271 B IT 1099271B IT 28555/78 A IT28555/78 A IT 28555/78A IT 2855578 A IT2855578 A IT 2855578A IT 1099271 B IT1099271 B IT 1099271B
Authority
IT
Italy
Prior art keywords
semiconductor devices
optical semiconductor
glass coating
coating
glass
Prior art date
Application number
IT28555/78A
Other languages
English (en)
Other versions
IT7828555A0 (it
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Publication of IT7828555A0 publication Critical patent/IT7828555A0/it
Application granted granted Critical
Publication of IT1099271B publication Critical patent/IT1099271B/it

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/028Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B3/00Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
    • H01B3/02Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances
    • H01B3/08Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances quartz; glass; glass wool; slag wool; vitreous enamels
    • H01B3/087Chemical composition of glass
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02Bonding areas ; Manufacturing methods related thereto
    • H01L24/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0216Coatings
    • H01L31/02161Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04042Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • H01L2224/0555Shape
    • H01L2224/05552Shape in top view
    • H01L2224/05553Shape in top view being rectangular
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/48463Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/12Passive devices, e.g. 2 terminal devices
    • H01L2924/1204Optical Diode
    • H01L2924/12042LASER
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/12Passive devices, e.g. 2 terminal devices
    • H01L2924/1204Optical Diode
    • H01L2924/12043Photo diode

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Lasers (AREA)
  • Glass Compositions (AREA)
  • Led Device Packages (AREA)
  • Led Devices (AREA)
  • Light Receiving Elements (AREA)
IT28555/78A 1977-10-11 1978-10-09 Rivestimento vetroso per dispositivi ottici a semiconduttore IT1099271B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US84077877A 1977-10-11 1977-10-11

Publications (2)

Publication Number Publication Date
IT7828555A0 IT7828555A0 (it) 1978-10-09
IT1099271B true IT1099271B (it) 1985-09-18

Family

ID=25283207

Family Applications (1)

Application Number Title Priority Date Filing Date
IT28555/78A IT1099271B (it) 1977-10-11 1978-10-09 Rivestimento vetroso per dispositivi ottici a semiconduttore

Country Status (10)

Country Link
JP (1) JPS5464483A (it)
BE (1) BE871127A (it)
CA (1) CA1115401A (it)
CH (1) CH635466A5 (it)
DE (1) DE2843280A1 (it)
FR (1) FR2406309A1 (it)
GB (1) GB2005917B (it)
IT (1) IT1099271B (it)
NL (1) NL7810206A (it)
SE (1) SE7810313L (it)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4751708A (en) * 1982-03-29 1988-06-14 International Business Machines Corporation Semiconductor injection lasers
JPS60217685A (ja) * 1984-04-13 1985-10-31 Hitachi Ltd 発光素子
US5444726A (en) * 1990-11-07 1995-08-22 Fuji Electric Co., Ltd. Semiconductor laser device
EP0484887B1 (en) * 1990-11-07 1996-04-03 Fuji Electric Co., Ltd. Laser diode device having a protective layer on its light-emitting end face
US5488623A (en) * 1990-11-07 1996-01-30 Fuji Electric Co., Ltd. Mold-type semiconductor laser device with reduced light-emitting point displacement during operation
US20080049431A1 (en) * 2006-08-24 2008-02-28 Heather Debra Boek Light emitting device including anti-reflection layer(s)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR87810E (fr) * 1961-09-29 1966-05-20 Ibm Objets revêtus et procédé de réalisation de leurs revêtements protecteurs
GB1250099A (it) * 1969-04-14 1971-10-20
US3676756A (en) * 1969-09-18 1972-07-11 Innotech Corp Insulated gate field effect device having glass gate insulator
GB1352959A (en) * 1972-11-09 1974-05-15 Standard Telephones Cables Ltd Passivation of semiconductor devices

Also Published As

Publication number Publication date
CH635466A5 (de) 1983-03-31
CA1115401A (en) 1981-12-29
GB2005917B (en) 1982-01-20
GB2005917A (en) 1979-04-25
NL7810206A (nl) 1979-04-17
SE7810313L (sv) 1979-04-11
FR2406309A1 (fr) 1979-05-11
FR2406309B1 (it) 1982-05-14
BE871127A (fr) 1979-02-01
JPS5464483A (en) 1979-05-24
IT7828555A0 (it) 1978-10-09
DE2843280A1 (de) 1979-04-12

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