BE851843A - Procede pour purifier un corps en germanium - Google Patents

Procede pour purifier un corps en germanium

Info

Publication number
BE851843A
BE851843A BE175273A BE175273A BE851843A BE 851843 A BE851843 A BE 851843A BE 175273 A BE175273 A BE 175273A BE 175273 A BE175273 A BE 175273A BE 851843 A BE851843 A BE 851843A
Authority
BE
Belgium
Prior art keywords
purifying
germanium body
germanium
Prior art date
Application number
BE175273A
Other languages
English (en)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of BE851843A publication Critical patent/BE851843A/fr

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
    • C22B41/00—Obtaining germanium
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
    • C22B9/00—General processes of refining or remelting of metals; Apparatus for electroslag or arc remelting of metals
    • C22B9/02—Refining by liquating, filtering, centrifuging, distilling, or supersonic wave action including acoustic waves
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
    • C22B9/00—General processes of refining or remelting of metals; Apparatus for electroslag or arc remelting of metals
    • C22B9/14—Refining in the solid state
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/08—Germanium
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P10/00—Technologies related to metal processing
    • Y02P10/20—Recycling

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Manufacture And Refinement Of Metals (AREA)
  • Silicon Compounds (AREA)
BE175273A 1976-02-26 1977-02-25 Procede pour purifier un corps en germanium BE851843A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19762607911 DE2607911A1 (de) 1976-02-26 1976-02-26 Verfahren zur reinigung eines germaniumkoerpers

Publications (1)

Publication Number Publication Date
BE851843A true BE851843A (fr) 1977-06-16

Family

ID=5970969

Family Applications (1)

Application Number Title Priority Date Filing Date
BE175273A BE851843A (fr) 1976-02-26 1977-02-25 Procede pour purifier un corps en germanium

Country Status (5)

Country Link
US (1) US4165249A (fr)
JP (1) JPS52103317A (fr)
BE (1) BE851843A (fr)
DE (1) DE2607911A1 (fr)
FR (1) FR2342348A1 (fr)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4277303A (en) * 1978-08-07 1981-07-07 The Harshaw Chemical Company Getter for melt-grown scintillator ingot and method for growing the ingot
US4401505A (en) * 1982-03-31 1983-08-30 The United States Of America As Represented By The Administrator National Aeronautics And Space Administration Method of increasing minority carrier lifetime in silicon web or the like
US4690725A (en) * 1985-11-22 1987-09-01 Cominco Ltd. Purification of Cd and Te by zone refining
US6840999B2 (en) * 2000-07-25 2005-01-11 Board Of Regents The University Of Texas System In situ regrowth and purification of crystalline thin films
CN102206858A (zh) * 2011-06-30 2011-10-05 白尔隽 高纯锗多晶制备工艺及专用设备
CN109321976A (zh) * 2018-11-15 2019-02-12 云南中科鑫圆晶体材料有限公司 制备13n超高纯锗单晶的方法及设备
CN109943889A (zh) * 2018-11-15 2019-06-28 云南中科鑫圆晶体材料有限公司 超高纯度锗多晶的制备方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE510303A (fr) * 1951-11-16
NL235410A (fr) * 1959-01-23 1900-01-01
NL239785A (fr) * 1959-06-02
US3162526A (en) * 1961-10-26 1964-12-22 Grace W R & Co Method of doping semiconductor materials
US3285017A (en) * 1963-05-27 1966-11-15 Monsanto Co Two-phase thermoelectric body comprising a silicon-germanium matrix
US3671330A (en) * 1970-10-21 1972-06-20 Gen Electric Removal of acceptor impurities from high purity germanium
US4000020A (en) * 1973-04-30 1976-12-28 Texas Instruments Incorporated Vapor epitaxial method for depositing gallium arsenide phosphide on germanium and silicon substrate wafers

Also Published As

Publication number Publication date
FR2342348A1 (fr) 1977-09-23
FR2342348B1 (fr) 1980-03-07
US4165249A (en) 1979-08-21
JPS52103317A (en) 1977-08-30
DE2607911A1 (de) 1977-09-01

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