BE821877A - Nouvelles diodes zener a tension de seuil amelioree et a bruitselectriques reduits et procede de fabrication - Google Patents

Nouvelles diodes zener a tension de seuil amelioree et a bruitselectriques reduits et procede de fabrication

Info

Publication number
BE821877A
BE821877A BE150231A BE150231A BE821877A BE 821877 A BE821877 A BE 821877A BE 150231 A BE150231 A BE 150231A BE 150231 A BE150231 A BE 150231A BE 821877 A BE821877 A BE 821877A
Authority
BE
Belgium
Prior art keywords
manufacturing process
threshold voltage
zener diodes
electrical noise
reduced electrical
Prior art date
Application number
BE150231A
Other languages
English (en)
French (fr)
Inventor
G Dumas
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of BE821877A publication Critical patent/BE821877A/xx

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • H01J37/3053Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/22Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using physical deposition, e.g. vacuum deposition or sputtering
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901Materials
    • H10P14/2902Materials being Group IVA materials
    • H10P14/2905Silicon, silicon germanium or germanium
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34Deposited materials, e.g. layers
    • H10P14/3402Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411Silicon, silicon germanium or germanium
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/36Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done before the formation of the materials
    • H10P14/3602In-situ cleaning

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
BE150231A 1973-11-28 1974-11-05 Nouvelles diodes zener a tension de seuil amelioree et a bruitselectriques reduits et procede de fabrication BE821877A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7342381A FR2252652B1 (enExample) 1973-11-28 1973-11-28

Publications (1)

Publication Number Publication Date
BE821877A true BE821877A (fr) 1975-05-05

Family

ID=9128391

Family Applications (1)

Application Number Title Priority Date Filing Date
BE150231A BE821877A (fr) 1973-11-28 1974-11-05 Nouvelles diodes zener a tension de seuil amelioree et a bruitselectriques reduits et procede de fabrication

Country Status (5)

Country Link
BE (1) BE821877A (enExample)
DE (1) DE2456129A1 (enExample)
FR (1) FR2252652B1 (enExample)
GB (1) GB1494905A (enExample)
IT (1) IT1025714B (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3310044A1 (de) * 1983-03-19 1984-09-20 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren und anordnung zur beschichtung eines substrates
JP4129106B2 (ja) 1999-10-27 2008-08-06 三菱電機株式会社 半導体装置

Also Published As

Publication number Publication date
DE2456129A1 (de) 1975-06-05
FR2252652B1 (enExample) 1977-06-10
IT1025714B (it) 1978-08-30
FR2252652A1 (enExample) 1975-06-20
GB1494905A (en) 1977-12-14

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