BE818885A - Procede pour realiser un dispositif a deplacement de charges dans la technique a deux phases - Google Patents
Procede pour realiser un dispositif a deplacement de charges dans la technique a deux phasesInfo
- Publication number
- BE818885A BE818885A BE147640A BE147640A BE818885A BE 818885 A BE818885 A BE 818885A BE 147640 A BE147640 A BE 147640A BE 147640 A BE147640 A BE 147640A BE 818885 A BE818885 A BE 818885A
- Authority
- BE
- Belgium
- Prior art keywords
- making
- shifting device
- load shifting
- phase technique
- technique
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/762—Charge transfer devices
- H01L29/765—Charge-coupled devices
- H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
- H01L29/76866—Surface Channel CCD
- H01L29/76875—Two-Phase CCD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1062—Channel region of field-effect devices of charge coupled devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42396—Gate electrodes for field effect devices for charge coupled devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/762—Charge transfer devices
- H01L29/765—Charge-coupled devices
- H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/051—Etching
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/143—Shadow masking
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Solid State Image Pick-Up Elements (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2341154A DE2341154C2 (de) | 1973-08-14 | 1973-08-14 | Verfahren zur Herstellung einer Zweiphasen-Ladungsverschiebeanordnung |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| BE818885A true BE818885A (fr) | 1974-12-02 |
Family
ID=5889756
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BE147640A BE818885A (fr) | 1973-08-14 | 1974-08-14 | Procede pour realiser un dispositif a deplacement de charges dans la technique a deux phases |
Country Status (15)
| Country | Link |
|---|---|
| US (1) | US3908262A (fr) |
| JP (1) | JPS5051277A (fr) |
| AT (1) | AT341580B (fr) |
| BE (1) | BE818885A (fr) |
| CA (1) | CA1001775A (fr) |
| CH (1) | CH573662A5 (fr) |
| DE (1) | DE2341154C2 (fr) |
| DK (1) | DK139369C (fr) |
| FR (1) | FR2241142B1 (fr) |
| GB (1) | GB1444452A (fr) |
| IE (1) | IE39610B1 (fr) |
| IT (1) | IT1019904B (fr) |
| LU (1) | LU70712A1 (fr) |
| NL (1) | NL7410201A (fr) |
| SE (1) | SE394766B (fr) |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1534896A (en) * | 1975-05-19 | 1978-12-06 | Itt | Direct metal contact to buried layer |
| US4035906A (en) * | 1975-07-23 | 1977-07-19 | Texas Instruments Incorporated | Silicon gate CCD structure |
| US4027382A (en) * | 1975-07-23 | 1977-06-07 | Texas Instruments Incorporated | Silicon gate CCD structure |
| US4060427A (en) * | 1976-04-05 | 1977-11-29 | Ibm Corporation | Method of forming an integrated circuit region through the combination of ion implantation and diffusion steps |
| US4167017A (en) * | 1976-06-01 | 1979-09-04 | Texas Instruments Incorporated | CCD structures with surface potential asymmetry beneath the phase electrodes |
| US4182023A (en) * | 1977-10-21 | 1980-01-08 | Ncr Corporation | Process for minimum overlap silicon gate devices |
| US4525919A (en) * | 1982-06-16 | 1985-07-02 | Raytheon Company | Forming sub-micron electrodes by oblique deposition |
| FR2571177B1 (fr) * | 1984-10-02 | 1987-02-27 | Thomson Csf | Procede de realisation de grilles en siliciure ou en silicium pour circuit integre comportant des elements du type grille - isolant - semi-conducteur |
| WO1987001507A1 (fr) * | 1985-08-27 | 1987-03-12 | Lockheed Missiles & Space Company, Inc. | Procedure d'alignement de portes dans la fabrication de dispositifs a semiconducteurs |
| NL8502765A (nl) * | 1985-10-10 | 1987-05-04 | Philips Nv | Werkwijze ter vervaardiging van een halfgeleiderinrichting. |
| JPH0834194B2 (ja) * | 1989-06-30 | 1996-03-29 | 松下電器産業株式会社 | イオン注入方法及び本方法を用いた半導体装置の製造方法 |
| KR940010932B1 (ko) * | 1991-12-23 | 1994-11-19 | 금성일렉트론주식회사 | Ccd영상소자 제조방법 |
| US5290358A (en) * | 1992-09-30 | 1994-03-01 | International Business Machines Corporation | Apparatus for directional low pressure chemical vapor deposition (DLPCVD) |
| US5328854A (en) * | 1993-03-31 | 1994-07-12 | At&T Bell Laboratories | Fabrication of electronic devices with an internal window |
| IL106892A0 (en) * | 1993-09-02 | 1993-12-28 | Pierre Badehi | Methods and apparatus for producing integrated circuit devices |
| IL108359A (en) * | 1994-01-17 | 2001-04-30 | Shellcase Ltd | Method and device for creating integrated circular devices |
| US5444007A (en) * | 1994-08-03 | 1995-08-22 | Kabushiki Kaisha Toshiba | Formation of trenches having different profiles |
| US5668018A (en) * | 1995-06-07 | 1997-09-16 | International Business Machines Corporation | Method for defining a region on a wall of a semiconductor structure |
| GB9512089D0 (en) * | 1995-06-14 | 1995-08-09 | Evans Jonathan L | Semiconductor device fabrication |
| JP2965061B2 (ja) * | 1996-04-19 | 1999-10-18 | 日本電気株式会社 | 電荷結合素子およびその製造方法 |
| DE10115912A1 (de) * | 2001-03-30 | 2002-10-17 | Infineon Technologies Ag | Verfahren zur Herstellung einer Halbleiteranordnung und Verwendung einer Ionenstrahlanlage zur Durchführung des Verfahrens |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2666814A (en) * | 1949-04-27 | 1954-01-19 | Bell Telephone Labor Inc | Semiconductor translating device |
| GB1355806A (en) * | 1970-12-09 | 1974-06-05 | Mullard Ltd | Methods of manufacturing a semiconductor device |
| US3796932A (en) * | 1971-06-28 | 1974-03-12 | Bell Telephone Labor Inc | Charge coupled devices employing nonuniform concentrations of immobile charge along the information channel |
| US3851379A (en) * | 1973-05-16 | 1974-12-03 | Westinghouse Electric Corp | Solid state components |
-
1973
- 1973-08-14 DE DE2341154A patent/DE2341154C2/de not_active Expired
-
1974
- 1974-07-15 IE IE1488/74A patent/IE39610B1/xx unknown
- 1974-07-17 GB GB3156074A patent/GB1444452A/en not_active Expired
- 1974-07-29 NL NL7410201A patent/NL7410201A/xx not_active Application Discontinuation
- 1974-07-31 US US493267A patent/US3908262A/en not_active Expired - Lifetime
- 1974-08-01 AT AT631774A patent/AT341580B/de not_active IP Right Cessation
- 1974-08-01 FR FR7426755A patent/FR2241142B1/fr not_active Expired
- 1974-08-06 CH CH1072574A patent/CH573662A5/xx not_active IP Right Cessation
- 1974-08-08 SE SE7410186A patent/SE394766B/xx unknown
- 1974-08-12 LU LU70712A patent/LU70712A1/xx unknown
- 1974-08-13 DK DK430874A patent/DK139369C/da active
- 1974-08-13 CA CA206,899A patent/CA1001775A/en not_active Expired
- 1974-08-13 IT IT26267/74A patent/IT1019904B/it active
- 1974-08-14 JP JP49093190A patent/JPS5051277A/ja active Pending
- 1974-08-14 BE BE147640A patent/BE818885A/fr unknown
Also Published As
| Publication number | Publication date |
|---|---|
| FR2241142A1 (fr) | 1975-03-14 |
| DK430874A (fr) | 1975-04-14 |
| DE2341154C2 (de) | 1975-06-26 |
| AT341580B (de) | 1978-02-10 |
| GB1444452A (en) | 1976-07-28 |
| NL7410201A (nl) | 1975-02-18 |
| DK139369C (da) | 1979-08-20 |
| DK139369B (da) | 1979-02-05 |
| US3908262A (en) | 1975-09-30 |
| FR2241142B1 (fr) | 1977-10-14 |
| SE7410186L (fr) | 1975-02-17 |
| JPS5051277A (fr) | 1975-05-08 |
| LU70712A1 (fr) | 1974-12-10 |
| CA1001775A (en) | 1976-12-14 |
| IE39610L (en) | 1975-02-14 |
| IT1019904B (it) | 1977-11-30 |
| IE39610B1 (en) | 1978-11-22 |
| ATA631774A (de) | 1977-06-15 |
| SE394766B (sv) | 1977-07-04 |
| CH573662A5 (fr) | 1976-03-15 |
| DE2341154B1 (de) | 1974-11-07 |
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