BE818317A - Systeme de memoire a acces direct - Google Patents
Systeme de memoire a acces directInfo
- Publication number
- BE818317A BE818317A BE147137A BE147137A BE818317A BE 818317 A BE818317 A BE 818317A BE 147137 A BE147137 A BE 147137A BE 147137 A BE147137 A BE 147137A BE 818317 A BE818317 A BE 818317A
- Authority
- BE
- Belgium
- Prior art keywords
- access memory
- memory system
- direct access
- direct
- memory
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/402—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration individual to each memory cell, i.e. internal refresh
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
- G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4093—Input/output [I/O] data interface arrangements, e.g. data buffers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4094—Bit-line management or control circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4096—Input/output [I/O] data management or control circuits, e.g. reading or writing circuits, I/O drivers or bit-line switches
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4099—Dummy cell treatment; Reference voltage generators
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/003—Modifications for increasing the reliability for protection
- H03K19/00369—Modifications for compensating variations of temperature, supply voltage or other physical parameters
- H03K19/00384—Modifications for compensating variations of temperature, supply voltage or other physical parameters in field effect transistor circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/0175—Coupling arrangements; Interface arrangements
- H03K19/0185—Coupling arrangements; Interface arrangements using field effect transistors only
- H03K19/018507—Interface arrangements
- H03K19/01855—Interface arrangements synchronous, i.e. using clock signals
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Databases & Information Systems (AREA)
- Dram (AREA)
- Static Random-Access Memory (AREA)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US38499473A | 1973-08-02 | 1973-08-02 | |
US38513873A | 1973-08-02 | 1973-08-02 | |
US38520173A | 1973-08-02 | 1973-08-02 | |
US05/385,122 US3940747A (en) | 1973-08-02 | 1973-08-02 | High density, high speed random access read-write memory |
US385203A US3909631A (en) | 1973-08-02 | 1973-08-02 | Pre-charge voltage generating system |
Publications (1)
Publication Number | Publication Date |
---|---|
BE818317A true BE818317A (fr) | 1974-11-18 |
Family
ID=27541399
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BE147137A BE818317A (fr) | 1973-08-02 | 1974-07-31 | Systeme de memoire a acces direct |
Country Status (12)
Country | Link |
---|---|
JP (1) | JPS5046049A (nl) |
BE (1) | BE818317A (nl) |
CH (1) | CH594955A5 (nl) |
DD (1) | DD116339A5 (nl) |
DE (1) | DE2437396A1 (nl) |
FR (1) | FR2239737B1 (nl) |
GB (1) | GB1484941A (nl) |
HU (1) | HU171057B (nl) |
IT (1) | IT1018806B (nl) |
NL (1) | NL7410423A (nl) |
RO (1) | RO82918B (nl) |
SE (1) | SE7409882L (nl) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS525224A (en) * | 1975-07-02 | 1977-01-14 | Hitachi Ltd | 1trs-type memory cell |
DE2646245A1 (de) * | 1975-10-28 | 1977-05-05 | Motorola Inc | Speicherschaltung |
FR2337917A1 (fr) * | 1976-01-08 | 1977-08-05 | Mostek Corp | Memoire a acces direct en circuit integre |
JPS58139399A (ja) * | 1982-02-15 | 1983-08-18 | Hitachi Ltd | 半導体記憶装置 |
JPS6085492A (ja) * | 1983-10-17 | 1985-05-14 | Hitachi Ltd | ダイナミツクメモリ装置 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3514765A (en) * | 1969-05-23 | 1970-05-26 | Shell Oil Co | Sense amplifier comprising cross coupled mosfet's operating in a race mode for single device per bit mosfet memories |
US3678473A (en) * | 1970-06-04 | 1972-07-18 | Shell Oil Co | Read-write circuit for capacitive memory arrays |
BE789500A (fr) * | 1971-09-30 | 1973-03-29 | Siemens Ag | Memoire a semiconducteurs avec elements de memorisation a un seul transistor |
US3838404A (en) * | 1973-05-17 | 1974-09-24 | Teletype Corp | Random access memory system and cell |
-
1974
- 1974-07-29 FR FR7426264A patent/FR2239737B1/fr not_active Expired
- 1974-07-31 SE SE7409882A patent/SE7409882L/ not_active Application Discontinuation
- 1974-07-31 RO RO79624A patent/RO82918B/ro unknown
- 1974-07-31 BE BE147137A patent/BE818317A/xx unknown
- 1974-08-01 GB GB3398874A patent/GB1484941A/en not_active Expired
- 1974-08-01 JP JP49088633A patent/JPS5046049A/ja active Pending
- 1974-08-01 HU HUTE000791 patent/HU171057B/hu unknown
- 1974-08-01 IT IT5240774A patent/IT1018806B/it active
- 1974-08-02 DE DE19742437396 patent/DE2437396A1/de not_active Withdrawn
- 1974-08-02 NL NL7410423A patent/NL7410423A/nl not_active Application Discontinuation
- 1974-08-02 CH CH1065574A patent/CH594955A5/xx not_active IP Right Cessation
- 1974-08-02 DD DD18029474A patent/DD116339A5/xx unknown
Also Published As
Publication number | Publication date |
---|---|
IT1018806B (it) | 1977-10-20 |
CH594955A5 (nl) | 1978-01-31 |
RO82918B (ro) | 1984-09-30 |
JPS5046049A (nl) | 1975-04-24 |
GB1484941A (en) | 1977-09-08 |
RO82918A (ro) | 1984-08-17 |
SE7409882L (nl) | 1975-02-03 |
NL7410423A (nl) | 1975-02-04 |
FR2239737A1 (nl) | 1975-02-28 |
DD116339A5 (nl) | 1975-11-12 |
HU171057B (hu) | 1977-10-28 |
FR2239737B1 (nl) | 1980-12-05 |
DE2437396A1 (de) | 1975-02-13 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
BE811580A (fr) | Systeme de memoire a acces selectif | |
FR2277407A1 (fr) | Systeme a memoires hierarchisees | |
FR2282695A1 (fr) | Systeme de memoire a acces direct organise par mots | |
FR2464535B1 (fr) | Systeme de memoire statique remanente a acces direct | |
SE7801958L (sv) | Minnessystem for digitaldatorer | |
AT341253B (de) | Speicheranordnung | |
IT1006996B (it) | Sistema diagnostico a memoria di controllo microprogrammabile | |
FR2485228B1 (fr) | Systeme a memoire pour module de processeurs | |
BE808639A (fr) | Memoire de donnees extensible pour systeme calculateur | |
BE810858A (fr) | Systeme de memoire | |
NL7407119A (nl) | Geheugenstelsel. | |
IT1017290B (it) | Impianto di immagazzinaggio intermedio | |
BE797669A (fr) | Systeme de tele-surveillance | |
BE820274A (fr) | Memoire associative | |
FR2282676A1 (fr) | Systeme de securite pour memoire informatique | |
BE770815A (fr) | Dispositif d'acces a une memoire | |
AR201302A1 (es) | Disposicion de memoria | |
BE818317A (fr) | Systeme de memoire a acces direct | |
BE810857A (fr) | Systeme de memoire | |
BE820602A (fr) | Dispositif a memoire | |
BE801430A (nl) | Een geheugensysteem | |
BE769250A (fr) | Systeme d'adressage de memoire a tores magnetiques a transcouplage | |
BE774980A (fr) | Systeme de commande de memoire | |
AT344424B (de) | Speichermatrix | |
BE844422R (fr) | Systeme de tele-surveillance |