BE810947A - Procede de fabrication de piles solaires a couche antireflechissante - Google Patents

Procede de fabrication de piles solaires a couche antireflechissante

Info

Publication number
BE810947A
BE810947A BE140833A BE140833A BE810947A BE 810947 A BE810947 A BE 810947A BE 140833 A BE140833 A BE 140833A BE 140833 A BE140833 A BE 140833A BE 810947 A BE810947 A BE 810947A
Authority
BE
Belgium
Prior art keywords
reflective layer
solar batteries
layer solar
manufacturing anti
manufacturing
Prior art date
Application number
BE140833A
Other languages
English (en)
French (fr)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of BE810947A publication Critical patent/BE810947A/xx

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes)
    • H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes) consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
    • H10F77/315—Coatings for devices having potential barriers for photovoltaic cells the coatings being antireflective or having enhancing optical properties
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)
BE140833A 1973-08-22 1974-02-13 Procede de fabrication de piles solaires a couche antireflechissante BE810947A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US390672A US3904453A (en) 1973-08-22 1973-08-22 Fabrication of silicon solar cell with anti reflection film

Publications (1)

Publication Number Publication Date
BE810947A true BE810947A (fr) 1974-08-13

Family

ID=23543449

Family Applications (1)

Application Number Title Priority Date Filing Date
BE140833A BE810947A (fr) 1973-08-22 1974-02-13 Procede de fabrication de piles solaires a couche antireflechissante

Country Status (11)

Country Link
US (1) US3904453A (cs)
JP (2) JPS5046492A (cs)
AU (1) AU476141B2 (cs)
BE (1) BE810947A (cs)
CA (1) CA1030380A (cs)
DE (1) DE2408235A1 (cs)
FR (1) FR2241880B1 (cs)
GB (1) GB1452633A (cs)
IT (1) IT1011730B (cs)
NL (1) NL7405995A (cs)
SE (1) SE386012B (cs)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5165774U (cs) * 1974-11-20 1976-05-24
US4347264A (en) * 1975-09-18 1982-08-31 Solarex Corporation Method of applying contacts to a silicon wafer and product formed thereby
US4098917A (en) * 1976-09-08 1978-07-04 Texas Instruments Incorporated Method of providing a patterned metal layer on a substrate employing metal mask and ion milling
US4201798A (en) * 1976-11-10 1980-05-06 Solarex Corporation Method of applying an antireflective coating to a solar cell
US4156622A (en) * 1976-11-10 1979-05-29 Solarex Corporation Tantalum oxide antireflective coating and method of forming same
US4297391A (en) * 1979-01-16 1981-10-27 Solarex Corporation Method of applying electrical contacts to a photovoltaic cell
US4228446A (en) * 1979-05-10 1980-10-14 Rca Corporation Reduced blooming device having enhanced quantum efficiency
US4246043A (en) * 1979-12-03 1981-01-20 Solarex Corporation Yttrium oxide antireflective coating for solar cells
US4359487A (en) * 1980-07-11 1982-11-16 Exxon Research And Engineering Co. Method for applying an anti-reflection coating to a solar cell
US4336295A (en) * 1980-12-22 1982-06-22 Eastman Kodak Company Method of fabricating a transparent metal oxide electrode structure on a solid-state electrooptical device
US4328260A (en) * 1981-01-23 1982-05-04 Solarex Corporation Method for applying antireflective coating on solar cell
DE3131958A1 (de) * 1981-08-13 1983-02-24 Solarex Corp., 14001 Rockville, Md. Verfahren zur bildung eines antireflektionsueberzuges auf der oberflaeche von sonnenenergiezellen.
JPS5829069U (ja) * 1981-08-18 1983-02-25 株式会社佐文工業所 ミシンの全回転釜の内釜押え
US4522661A (en) * 1983-06-24 1985-06-11 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Low defect, high purity crystalline layers grown by selective deposition
US20080041443A1 (en) * 2006-08-16 2008-02-21 Hnuphotonics Thinned solar cell
JP5629210B2 (ja) * 2007-08-31 2014-11-19 ヘレウス プレシャス メタルズ ノース アメリカ コンショホーケン エルエルシー 太陽電池用層状コンタクト構造
US7784917B2 (en) 2007-10-03 2010-08-31 Lexmark International, Inc. Process for making a micro-fluid ejection head structure
US20090139868A1 (en) * 2007-12-03 2009-06-04 Palo Alto Research Center Incorporated Method of Forming Conductive Lines and Similar Features
US8008574B2 (en) * 2008-06-03 2011-08-30 Hamilton Sundstrand Corporation Photo cell with spaced anti-oxidation member on fluid loop
WO2010077622A1 (en) * 2008-12-08 2010-07-08 Arizona Board Of Regents, Acting For And On Behalf Of Arizona State University Electrical devices including dendritic metal electrodes
TWI431790B (zh) * 2011-09-01 2014-03-21 Gintech Energy Corp 太陽能電池

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3135638A (en) * 1960-10-27 1964-06-02 Hughes Aircraft Co Photochemical semiconductor mesa formation
US3442701A (en) * 1965-05-19 1969-05-06 Bell Telephone Labor Inc Method of fabricating semiconductor contacts
US3533850A (en) * 1965-10-13 1970-10-13 Westinghouse Electric Corp Antireflective coatings for solar cells
US3539883A (en) * 1967-03-15 1970-11-10 Ion Physics Corp Antireflection coatings for semiconductor devices
US3567508A (en) * 1968-10-31 1971-03-02 Gen Electric Low temperature-high vacuum contact formation process

Also Published As

Publication number Publication date
FR2241880A1 (cs) 1975-03-21
AU476141B2 (en) 1976-09-09
NL7405995A (nl) 1975-02-25
CA1030380A (en) 1978-05-02
IT1011730B (it) 1977-02-10
SE7401511L (cs) 1975-02-24
JPS5046492A (cs) 1975-04-25
JPS58103155U (ja) 1983-07-13
FR2241880B1 (cs) 1977-03-04
GB1452633A (en) 1976-10-13
AU6529474A (en) 1975-08-07
US3904453A (en) 1975-09-09
DE2408235A1 (de) 1975-02-27
SE386012B (sv) 1976-07-26

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