BE768570A - Procede de fabrication de detecteurs de particules a semi-conducteur a structure nip sans zone morte et detecteurs obtenusselon ledit procede - Google Patents

Procede de fabrication de detecteurs de particules a semi-conducteur a structure nip sans zone morte et detecteurs obtenusselon ledit procede

Info

Publication number
BE768570A
BE768570A BE768570A BE768570A BE768570A BE 768570 A BE768570 A BE 768570A BE 768570 A BE768570 A BE 768570A BE 768570 A BE768570 A BE 768570A BE 768570 A BE768570 A BE 768570A
Authority
BE
Belgium
Prior art keywords
detectors
procedure
obtained according
dead zone
manufacturing semiconductor
Prior art date
Application number
BE768570A
Other languages
English (en)
French (fr)
Inventor
A Garin
M Oria
B Waast
Original Assignee
Commissariat Energie Atomique
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat Energie Atomique filed Critical Commissariat Energie Atomique
Publication of BE768570A publication Critical patent/BE768570A/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
    • H01L31/117—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation of the bulk effect radiation detector type, e.g. Ge-Li compensated PIN gamma-ray detectors
    • H01L31/1175—Li compensated PIN gamma-ray detectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electromagnetism (AREA)
  • Measurement Of Radiation (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Light Receiving Elements (AREA)
BE768570A 1970-06-26 1971-06-16 Procede de fabrication de detecteurs de particules a semi-conducteur a structure nip sans zone morte et detecteurs obtenusselon ledit procede BE768570A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7023817A FR2094616A5 (de) 1970-06-26 1970-06-26

Publications (1)

Publication Number Publication Date
BE768570A true BE768570A (fr) 1971-11-03

Family

ID=9057886

Family Applications (1)

Application Number Title Priority Date Filing Date
BE768570A BE768570A (fr) 1970-06-26 1971-06-16 Procede de fabrication de detecteurs de particules a semi-conducteur a structure nip sans zone morte et detecteurs obtenusselon ledit procede

Country Status (7)

Country Link
BE (1) BE768570A (de)
CH (1) CH546412A (de)
DE (1) DE2131755C3 (de)
ES (1) ES392672A1 (de)
FR (1) FR2094616A5 (de)
GB (1) GB1320834A (de)
IT (1) IT939723B (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2909564C2 (de) * 1979-03-12 1981-01-08 Geraetewerk Lahr Gmbh, 7630 Lahr Einrichtung zur Schwingungsreduktion in einem Schallplattenspieler

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3413528A (en) * 1966-03-03 1968-11-26 Atomic Energy Commission Usa Lithium drifted semiconductor radiation detector
US3413529A (en) * 1966-03-08 1968-11-26 Atomic Energy Commission Usa A semiconductor detector having a lithium compensated shelf region between opposite conductivity type regions
FR1532346A (fr) * 1967-04-12 1968-07-12 Centre Nat Rech Scient Perfectionnements aux détecteurs de rayonnements nucléaires, du type diodes n-i-p

Also Published As

Publication number Publication date
CH546412A (fr) 1974-02-28
IT939723B (it) 1973-02-10
ES392672A1 (es) 1975-04-16
DE2131755C3 (de) 1975-06-12
DE2131755B2 (de) 1974-10-17
FR2094616A5 (de) 1972-02-04
DE2131755A1 (de) 1972-01-20
GB1320834A (en) 1973-06-20

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Legal Events

Date Code Title Description
RE Patent lapsed

Owner name: COMMISSARIAT A L'ENERGIE ATOMIQUE

Effective date: 19850616