BE768570A - Procede de fabrication de detecteurs de particules a semi-conducteur a structure nip sans zone morte et detecteurs obtenusselon ledit procede - Google Patents
Procede de fabrication de detecteurs de particules a semi-conducteur a structure nip sans zone morte et detecteurs obtenusselon ledit procedeInfo
- Publication number
- BE768570A BE768570A BE768570A BE768570A BE768570A BE 768570 A BE768570 A BE 768570A BE 768570 A BE768570 A BE 768570A BE 768570 A BE768570 A BE 768570A BE 768570 A BE768570 A BE 768570A
- Authority
- BE
- Belgium
- Prior art keywords
- detectors
- procedure
- obtained according
- dead zone
- manufacturing semiconductor
- Prior art date
Links
- 238000000034 method Methods 0.000 title 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000002245 particle Substances 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
- H01L31/117—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation of the bulk effect radiation detector type, e.g. Ge-Li compensated PIN gamma-ray detectors
- H01L31/1175—Li compensated PIN gamma-ray detectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electromagnetism (AREA)
- Measurement Of Radiation (AREA)
- Light Receiving Elements (AREA)
- Physical Vapour Deposition (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7023817A FR2094616A5 (de) | 1970-06-26 | 1970-06-26 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| BE768570A true BE768570A (fr) | 1971-11-03 |
Family
ID=9057886
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BE768570A BE768570A (fr) | 1970-06-26 | 1971-06-16 | Procede de fabrication de detecteurs de particules a semi-conducteur a structure nip sans zone morte et detecteurs obtenusselon ledit procede |
Country Status (7)
| Country | Link |
|---|---|
| BE (1) | BE768570A (de) |
| CH (1) | CH546412A (de) |
| DE (1) | DE2131755C3 (de) |
| ES (1) | ES392672A1 (de) |
| FR (1) | FR2094616A5 (de) |
| GB (1) | GB1320834A (de) |
| IT (1) | IT939723B (de) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2909564C2 (de) * | 1979-03-12 | 1981-01-08 | Geraetewerk Lahr Gmbh, 7630 Lahr | Einrichtung zur Schwingungsreduktion in einem Schallplattenspieler |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3413528A (en) * | 1966-03-03 | 1968-11-26 | Atomic Energy Commission Usa | Lithium drifted semiconductor radiation detector |
| US3413529A (en) * | 1966-03-08 | 1968-11-26 | Atomic Energy Commission Usa | A semiconductor detector having a lithium compensated shelf region between opposite conductivity type regions |
| FR1532346A (fr) * | 1967-04-12 | 1968-07-12 | Centre Nat Rech Scient | Perfectionnements aux détecteurs de rayonnements nucléaires, du type diodes n-i-p |
-
1970
- 1970-06-26 FR FR7023817A patent/FR2094616A5/fr not_active Expired
-
1971
- 1971-06-14 CH CH866971A patent/CH546412A/fr not_active IP Right Cessation
- 1971-06-16 BE BE768570A patent/BE768570A/xx not_active IP Right Cessation
- 1971-06-22 GB GB2926171A patent/GB1320834A/en not_active Expired
- 1971-06-25 IT IT6917471A patent/IT939723B/it active
- 1971-06-25 DE DE19712131755 patent/DE2131755C3/de not_active Expired
- 1971-06-26 ES ES392672A patent/ES392672A1/es not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| ES392672A1 (es) | 1975-04-16 |
| DE2131755B2 (de) | 1974-10-17 |
| DE2131755A1 (de) | 1972-01-20 |
| IT939723B (it) | 1973-02-10 |
| CH546412A (fr) | 1974-02-28 |
| DE2131755C3 (de) | 1975-06-12 |
| FR2094616A5 (de) | 1972-02-04 |
| GB1320834A (en) | 1973-06-20 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RE | Patent lapsed |
Owner name: COMMISSARIAT A L'ENERGIE ATOMIQUE Effective date: 19850616 |