CH546412A - Procede de fabrication d'un detecteur de particules a semiconducteur a structure nip et detecteur obtenu par la mise en oeuvre de ce procede. - Google Patents

Procede de fabrication d'un detecteur de particules a semiconducteur a structure nip et detecteur obtenu par la mise en oeuvre de ce procede.

Info

Publication number
CH546412A
CH546412A CH866971A CH546412DA CH546412A CH 546412 A CH546412 A CH 546412A CH 866971 A CH866971 A CH 866971A CH 546412D A CH546412D A CH 546412DA CH 546412 A CH546412 A CH 546412A
Authority
CH
Switzerland
Prior art keywords
detector
implementation
manufacturing
pin structure
semiconductor particle
Prior art date
Application number
CH866971A
Other languages
English (en)
French (fr)
Original Assignee
Commissariat Energie Atomique
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat Energie Atomique filed Critical Commissariat Energie Atomique
Publication of CH546412A publication Critical patent/CH546412A/fr

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/115Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
    • H01L31/117Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation of the bulk effect radiation detector type, e.g. Ge-Li compensated PIN gamma-ray detectors
    • H01L31/1175Li compensated PIN gamma-ray detectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electromagnetism (AREA)
  • Measurement Of Radiation (AREA)
  • Light Receiving Elements (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
CH866971A 1970-06-26 1971-06-14 Procede de fabrication d'un detecteur de particules a semiconducteur a structure nip et detecteur obtenu par la mise en oeuvre de ce procede. CH546412A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7023817A FR2094616A5 (de) 1970-06-26 1970-06-26

Publications (1)

Publication Number Publication Date
CH546412A true CH546412A (fr) 1974-02-28

Family

ID=9057886

Family Applications (1)

Application Number Title Priority Date Filing Date
CH866971A CH546412A (fr) 1970-06-26 1971-06-14 Procede de fabrication d'un detecteur de particules a semiconducteur a structure nip et detecteur obtenu par la mise en oeuvre de ce procede.

Country Status (7)

Country Link
BE (1) BE768570A (de)
CH (1) CH546412A (de)
DE (1) DE2131755C3 (de)
ES (1) ES392672A1 (de)
FR (1) FR2094616A5 (de)
GB (1) GB1320834A (de)
IT (1) IT939723B (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2909564C2 (de) * 1979-03-12 1981-01-08 Geraetewerk Lahr Gmbh, 7630 Lahr Einrichtung zur Schwingungsreduktion in einem Schallplattenspieler

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3413528A (en) * 1966-03-03 1968-11-26 Atomic Energy Commission Usa Lithium drifted semiconductor radiation detector
US3413529A (en) * 1966-03-08 1968-11-26 Atomic Energy Commission Usa A semiconductor detector having a lithium compensated shelf region between opposite conductivity type regions
FR1532346A (fr) * 1967-04-12 1968-07-12 Centre Nat Rech Scient Perfectionnements aux détecteurs de rayonnements nucléaires, du type diodes n-i-p

Also Published As

Publication number Publication date
ES392672A1 (es) 1975-04-16
DE2131755B2 (de) 1974-10-17
DE2131755A1 (de) 1972-01-20
IT939723B (it) 1973-02-10
DE2131755C3 (de) 1975-06-12
FR2094616A5 (de) 1972-02-04
BE768570A (fr) 1971-11-03
GB1320834A (en) 1973-06-20

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Legal Events

Date Code Title Description
PL Patent ceased