BE767579A - Redresseur de puissance a barriere de schottky - Google Patents

Redresseur de puissance a barriere de schottky

Info

Publication number
BE767579A
BE767579A BE767579A BE767579A BE767579A BE 767579 A BE767579 A BE 767579A BE 767579 A BE767579 A BE 767579A BE 767579 A BE767579 A BE 767579A BE 767579 A BE767579 A BE 767579A
Authority
BE
Belgium
Prior art keywords
schottky barrier
power rectifier
barrier power
rectifier
schottky
Prior art date
Application number
BE767579A
Other languages
English (en)
French (fr)
Inventor
D J Page
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of BE767579A publication Critical patent/BE767579A/xx

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00Diodes
    • H10D8/60Schottky-barrier diodes 
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/112Constructional design considerations for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layers, e.g. by using channel stoppers
    • H10P95/00
BE767579A 1970-05-26 1971-05-25 Redresseur de puissance a barriere de schottky BE767579A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US4062570A 1970-05-26 1970-05-26

Publications (1)

Publication Number Publication Date
BE767579A true BE767579A (fr) 1971-11-25

Family

ID=21912022

Family Applications (1)

Application Number Title Priority Date Filing Date
BE767579A BE767579A (fr) 1970-05-26 1971-05-25 Redresseur de puissance a barriere de schottky

Country Status (7)

Country Link
US (1) US3652905A (cg-RX-API-DMAC10.html)
BE (1) BE767579A (cg-RX-API-DMAC10.html)
BR (1) BR7103161D0 (cg-RX-API-DMAC10.html)
CA (1) CA923633A (cg-RX-API-DMAC10.html)
DE (1) DE2124847A1 (cg-RX-API-DMAC10.html)
FR (1) FR2090302A1 (cg-RX-API-DMAC10.html)
GB (1) GB1343501A (cg-RX-API-DMAC10.html)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3849789A (en) * 1972-11-01 1974-11-19 Gen Electric Schottky barrier diodes
JPS49115481A (cg-RX-API-DMAC10.html) * 1973-02-20 1974-11-05
US4016587A (en) * 1974-12-03 1977-04-05 International Business Machines Corporation Raised source and drain IGFET device and method
US4310568A (en) * 1976-12-29 1982-01-12 International Business Machines Corporation Method of fabricating improved Schottky barrier contacts
US4141020A (en) * 1976-12-29 1979-02-20 International Business Machines Corporation Intermetallic aluminum-transition metal compound Schottky contact
US4215156A (en) * 1977-08-26 1980-07-29 International Business Machines Corporation Method for fabricating tantalum semiconductor contacts
US4586063A (en) * 1984-04-02 1986-04-29 Oki Electric Industry Co., Ltd. Schottky barrier gate FET including tungsten-aluminum alloy
US5027166A (en) * 1987-12-04 1991-06-25 Sanken Electric Co., Ltd. High voltage, high speed Schottky semiconductor device and method of fabrication
JPH0618276B2 (ja) * 1988-11-11 1994-03-09 サンケン電気株式会社 半導体装置
JP2648519B2 (ja) * 1989-10-03 1997-09-03 日立粉末冶金株式会社 シンクロナイザーハブの製造方法
US6229193B1 (en) * 1998-04-06 2001-05-08 California Institute Of Technology Multiple stage high power diode
US20100264488A1 (en) * 2009-04-15 2010-10-21 Force Mos Technology Co. Ltd. Low Qgd trench MOSFET integrated with schottky rectifier

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL269131A (cg-RX-API-DMAC10.html) * 1960-10-25
US3265542A (en) * 1962-03-15 1966-08-09 Philco Corp Semiconductor device and method for the fabrication thereof

Also Published As

Publication number Publication date
BR7103161D0 (pt) 1973-04-10
FR2090302A1 (cg-RX-API-DMAC10.html) 1972-01-14
DE2124847A1 (de) 1971-12-09
CA923633A (en) 1973-03-27
GB1343501A (en) 1974-01-10
US3652905A (en) 1972-03-28

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