FR2090302A1 - - Google Patents
Info
- Publication number
- FR2090302A1 FR2090302A1 FR7118995A FR7118995A FR2090302A1 FR 2090302 A1 FR2090302 A1 FR 2090302A1 FR 7118995 A FR7118995 A FR 7118995A FR 7118995 A FR7118995 A FR 7118995A FR 2090302 A1 FR2090302 A1 FR 2090302A1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/60—Schottky-barrier diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
- H10D62/112—Constructional design considerations for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layers, e.g. by using channel stoppers
-
- H10P95/00—
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US4062570A | 1970-05-26 | 1970-05-26 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| FR2090302A1 true FR2090302A1 (cg-RX-API-DMAC10.html) | 1972-01-14 |
Family
ID=21912022
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7118995A Withdrawn FR2090302A1 (cg-RX-API-DMAC10.html) | 1970-05-26 | 1971-05-26 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US3652905A (cg-RX-API-DMAC10.html) |
| BE (1) | BE767579A (cg-RX-API-DMAC10.html) |
| BR (1) | BR7103161D0 (cg-RX-API-DMAC10.html) |
| CA (1) | CA923633A (cg-RX-API-DMAC10.html) |
| DE (1) | DE2124847A1 (cg-RX-API-DMAC10.html) |
| FR (1) | FR2090302A1 (cg-RX-API-DMAC10.html) |
| GB (1) | GB1343501A (cg-RX-API-DMAC10.html) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0368127A3 (en) * | 1988-11-11 | 1990-09-19 | Sanken Electric Co., Ltd. | High-voltage semiconductor device having a rectifying barrier, and method of fabrication |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3849789A (en) * | 1972-11-01 | 1974-11-19 | Gen Electric | Schottky barrier diodes |
| JPS49115481A (cg-RX-API-DMAC10.html) * | 1973-02-20 | 1974-11-05 | ||
| US4016587A (en) * | 1974-12-03 | 1977-04-05 | International Business Machines Corporation | Raised source and drain IGFET device and method |
| US4310568A (en) * | 1976-12-29 | 1982-01-12 | International Business Machines Corporation | Method of fabricating improved Schottky barrier contacts |
| US4141020A (en) * | 1976-12-29 | 1979-02-20 | International Business Machines Corporation | Intermetallic aluminum-transition metal compound Schottky contact |
| US4215156A (en) * | 1977-08-26 | 1980-07-29 | International Business Machines Corporation | Method for fabricating tantalum semiconductor contacts |
| US4586063A (en) * | 1984-04-02 | 1986-04-29 | Oki Electric Industry Co., Ltd. | Schottky barrier gate FET including tungsten-aluminum alloy |
| US5027166A (en) * | 1987-12-04 | 1991-06-25 | Sanken Electric Co., Ltd. | High voltage, high speed Schottky semiconductor device and method of fabrication |
| JP2648519B2 (ja) * | 1989-10-03 | 1997-09-03 | 日立粉末冶金株式会社 | シンクロナイザーハブの製造方法 |
| US6229193B1 (en) * | 1998-04-06 | 2001-05-08 | California Institute Of Technology | Multiple stage high power diode |
| US20100264488A1 (en) * | 2009-04-15 | 2010-10-21 | Force Mos Technology Co. Ltd. | Low Qgd trench MOSFET integrated with schottky rectifier |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL269131A (cg-RX-API-DMAC10.html) * | 1960-10-25 | |||
| US3265542A (en) * | 1962-03-15 | 1966-08-09 | Philco Corp | Semiconductor device and method for the fabrication thereof |
-
1970
- 1970-05-26 US US40625A patent/US3652905A/en not_active Expired - Lifetime
-
1971
- 1971-04-20 CA CA110779A patent/CA923633A/en not_active Expired
- 1971-04-29 GB GB1206571*[A patent/GB1343501A/en not_active Expired
- 1971-05-19 DE DE19712124847 patent/DE2124847A1/de active Pending
- 1971-05-24 BR BR3161/71A patent/BR7103161D0/pt unknown
- 1971-05-25 BE BE767579A patent/BE767579A/xx unknown
- 1971-05-26 FR FR7118995A patent/FR2090302A1/fr not_active Withdrawn
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0368127A3 (en) * | 1988-11-11 | 1990-09-19 | Sanken Electric Co., Ltd. | High-voltage semiconductor device having a rectifying barrier, and method of fabrication |
Also Published As
| Publication number | Publication date |
|---|---|
| BR7103161D0 (pt) | 1973-04-10 |
| DE2124847A1 (de) | 1971-12-09 |
| CA923633A (en) | 1973-03-27 |
| GB1343501A (en) | 1974-01-10 |
| BE767579A (fr) | 1971-11-25 |
| US3652905A (en) | 1972-03-28 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |