CA923633A - Schottky barrier power rectifier - Google Patents

Schottky barrier power rectifier

Info

Publication number
CA923633A
CA923633A CA110779A CA110779A CA923633A CA 923633 A CA923633 A CA 923633A CA 110779 A CA110779 A CA 110779A CA 110779 A CA110779 A CA 110779A CA 923633 A CA923633 A CA 923633A
Authority
CA
Canada
Prior art keywords
schottky barrier
power rectifier
barrier power
rectifier
schottky
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA110779A
Other languages
English (en)
Other versions
CA110779S (en
Inventor
J. Page Derrick
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Westinghouse Electric Corp
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Application granted granted Critical
Publication of CA923633A publication Critical patent/CA923633A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00Diodes
    • H10D8/60Schottky-barrier diodes 
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/112Constructional design considerations for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layers, e.g. by using channel stoppers
    • H10P95/00
CA110779A 1970-05-26 1971-04-20 Schottky barrier power rectifier Expired CA923633A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US4062570A 1970-05-26 1970-05-26

Publications (1)

Publication Number Publication Date
CA923633A true CA923633A (en) 1973-03-27

Family

ID=21912022

Family Applications (1)

Application Number Title Priority Date Filing Date
CA110779A Expired CA923633A (en) 1970-05-26 1971-04-20 Schottky barrier power rectifier

Country Status (7)

Country Link
US (1) US3652905A (cg-RX-API-DMAC10.html)
BE (1) BE767579A (cg-RX-API-DMAC10.html)
BR (1) BR7103161D0 (cg-RX-API-DMAC10.html)
CA (1) CA923633A (cg-RX-API-DMAC10.html)
DE (1) DE2124847A1 (cg-RX-API-DMAC10.html)
FR (1) FR2090302A1 (cg-RX-API-DMAC10.html)
GB (1) GB1343501A (cg-RX-API-DMAC10.html)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3849789A (en) * 1972-11-01 1974-11-19 Gen Electric Schottky barrier diodes
JPS49115481A (cg-RX-API-DMAC10.html) * 1973-02-20 1974-11-05
US4016587A (en) * 1974-12-03 1977-04-05 International Business Machines Corporation Raised source and drain IGFET device and method
US4310568A (en) * 1976-12-29 1982-01-12 International Business Machines Corporation Method of fabricating improved Schottky barrier contacts
US4141020A (en) * 1976-12-29 1979-02-20 International Business Machines Corporation Intermetallic aluminum-transition metal compound Schottky contact
US4215156A (en) * 1977-08-26 1980-07-29 International Business Machines Corporation Method for fabricating tantalum semiconductor contacts
US4586063A (en) * 1984-04-02 1986-04-29 Oki Electric Industry Co., Ltd. Schottky barrier gate FET including tungsten-aluminum alloy
US5027166A (en) * 1987-12-04 1991-06-25 Sanken Electric Co., Ltd. High voltage, high speed Schottky semiconductor device and method of fabrication
JPH0618276B2 (ja) * 1988-11-11 1994-03-09 サンケン電気株式会社 半導体装置
JP2648519B2 (ja) * 1989-10-03 1997-09-03 日立粉末冶金株式会社 シンクロナイザーハブの製造方法
US6229193B1 (en) * 1998-04-06 2001-05-08 California Institute Of Technology Multiple stage high power diode
US20100264488A1 (en) * 2009-04-15 2010-10-21 Force Mos Technology Co. Ltd. Low Qgd trench MOSFET integrated with schottky rectifier

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL269131A (cg-RX-API-DMAC10.html) * 1960-10-25
US3265542A (en) * 1962-03-15 1966-08-09 Philco Corp Semiconductor device and method for the fabrication thereof

Also Published As

Publication number Publication date
BR7103161D0 (pt) 1973-04-10
FR2090302A1 (cg-RX-API-DMAC10.html) 1972-01-14
DE2124847A1 (de) 1971-12-09
GB1343501A (en) 1974-01-10
BE767579A (fr) 1971-11-25
US3652905A (en) 1972-03-28

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