BE731765A - - Google Patents

Info

Publication number
BE731765A
BE731765A BE731765DA BE731765A BE 731765 A BE731765 A BE 731765A BE 731765D A BE731765D A BE 731765DA BE 731765 A BE731765 A BE 731765A
Authority
BE
Belgium
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from NLAANVRAGE6805705,A external-priority patent/NL174503C/xx
Application filed filed Critical
Publication of BE731765A publication Critical patent/BE731765A/xx

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00—Charge transfer devices
    • H10D44/40—Charge-coupled devices [CCD]
    • H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
    • H10D44/472—Surface-channel CCD
    • H10D44/476—Three-phase CCD
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/18—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages
    • G11C19/182—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes
    • G11C19/184—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes with field-effect transistors, e.g. MOS-FET
    • G11C19/186—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes with field-effect transistors, e.g. MOS-FET using only one transistor per capacitor, e.g. bucket brigade shift register
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C27/00—Electric analogue stores, e.g. for storing instantaneous values
    • G11C27/04—Shift registers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00—Charge transfer devices
    • H10D44/40—Charge-coupled devices [CCD]
    • H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
    • H10D44/462—Buried-channel CCD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Amplifiers (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
BE731765D 1968-04-23 1969-04-18 BE731765A (OSRAM)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NLAANVRAGE6805705,A NL174503C (nl) 1968-04-23 1968-04-23 Inrichting voor het overhevelen van lading.
NL6904620.A NL164158C (nl) 1968-04-23 1969-03-25 Schakeling met een veldeffecttransistor met een geisoleerde stuurelektrode voorzien van een beveiligingsdiode.

Publications (1)

Publication Number Publication Date
BE731765A true BE731765A (OSRAM) 1969-10-20

Family

ID=26644317

Family Applications (1)

Application Number Title Priority Date Filing Date
BE731765D BE731765A (OSRAM) 1968-04-23 1969-04-18

Country Status (11)

Country Link
US (1) US3624468A (OSRAM)
AT (1) AT303818B (OSRAM)
BE (1) BE731765A (OSRAM)
BR (1) BR6908290D0 (OSRAM)
CH (1) CH493941A (OSRAM)
DE (1) DE1919406C3 (OSRAM)
DK (1) DK119523B (OSRAM)
ES (1) ES366200A1 (OSRAM)
FR (1) FR2006741A1 (OSRAM)
GB (1) GB1260526A (OSRAM)
SE (1) SE355694B (OSRAM)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4395723A (en) * 1980-05-27 1983-07-26 Eliyahou Harari Floating substrate dynamic RAM cell with lower punch-through means
NL8303792A (nl) * 1983-11-03 1985-06-03 Cordis Europ Inrichting voorzien van een op een isfet gebaseerd meetcircuit; voor toepassing in het meetcircuit geschikte isfet en werkwijze ter vervaardiging van een in het meetcircuit toe te passen isfet.
JPS62171151A (ja) * 1986-01-22 1987-07-28 Mitsubishi Electric Corp 出力回路
US5529046A (en) * 1995-01-06 1996-06-25 Xerox Corporation High voltage ignition control apparatus for an internal combustion engine

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3264493A (en) * 1963-10-01 1966-08-02 Fairchild Camera Instr Co Semiconductor circuit module for a high-gain, high-input impedance amplifier
US3441748A (en) * 1965-03-22 1969-04-29 Rca Corp Bidirectional igfet with symmetrical linear resistance with specific substrate voltage control
FR1484322A (fr) * 1965-06-22 1967-06-09 Philips Nv Composant semi-conducteur complexe
US3764864A (en) * 1966-03-29 1973-10-09 Matsushita Electronics Corp Insulated-gate field-effect transistor with punch-through effect element
US3543052A (en) * 1967-06-05 1970-11-24 Bell Telephone Labor Inc Device employing igfet in combination with schottky diode
US3470390A (en) * 1968-02-02 1969-09-30 Westinghouse Electric Corp Integrated back-to-back diodes to prevent breakdown of mis gate dielectric

Also Published As

Publication number Publication date
DE1919406A1 (de) 1970-12-03
ES366200A1 (es) 1971-03-16
FR2006741B1 (OSRAM) 1973-10-19
SE355694B (OSRAM) 1973-04-30
AT303818B (de) 1972-12-11
DE1919406B2 (de) 1980-09-11
DK119523B (da) 1971-01-18
GB1260526A (en) 1972-01-19
CH493941A (de) 1970-07-15
US3624468A (en) 1971-11-30
DE1919406C3 (de) 1981-11-05
FR2006741A1 (fr) 1970-01-02
BR6908290D0 (pt) 1973-04-26

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