BE730645A - - Google Patents

Info

Publication number
BE730645A
BE730645A BE730645DA BE730645A BE 730645 A BE730645 A BE 730645A BE 730645D A BE730645D A BE 730645DA BE 730645 A BE730645 A BE 730645A
Authority
BE
Belgium
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of BE730645A publication Critical patent/BE730645A/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291Oxides or nitrides or carbides, e.g. ceramics, glass
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/106Masks, special
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/145Shaped junctions
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/151Simultaneous diffusion
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/173Washed emitter

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
BE730645D 1968-04-10 1969-03-28 BE730645A (en:Method)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR147642 1968-04-10
FR151075A FR95067E (fr) 1968-04-10 1968-05-08 Procédé de fabrication de dispositifs semi-conducteurs.

Publications (1)

Publication Number Publication Date
BE730645A true BE730645A (en:Method) 1969-09-29

Family

ID=26181939

Family Applications (1)

Application Number Title Priority Date Filing Date
BE730645D BE730645A (en:Method) 1968-04-10 1969-03-28

Country Status (7)

Country Link
US (1) US3635772A (en:Method)
BE (1) BE730645A (en:Method)
CH (1) CH499205A (en:Method)
DE (1) DE1918054A1 (en:Method)
FR (2) FR1569872A (en:Method)
GB (1) GB1218676A (en:Method)
NL (1) NL6904936A (en:Method)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE759583A (fr) * 1970-02-20 1971-04-30 Rca Corp Transistor de puissance pour micro-ondes
US3860461A (en) * 1973-05-29 1975-01-14 Texas Instruments Inc Method for fabricating semiconductor devices utilizing composite masking
US3922184A (en) * 1973-12-26 1975-11-25 Ibm Method for forming openings through insulative layers in the fabrication of integrated circuits
DE2453134C3 (de) * 1974-11-08 1983-02-10 Deutsche Itt Industries Gmbh, 7800 Freiburg Planardiffusionsverfahren
JPS543479A (en) * 1977-06-09 1979-01-11 Toshiba Corp Semiconductor device and its manufacture
JPS6410951B2 (en:Method) * 1979-12-28 1989-02-22 Intaanashonaru Bijinesu Mashiinzu Corp
JPS5955054A (ja) * 1982-09-24 1984-03-29 Hitachi Ltd 半導体装置の製造方法
JPS60175453A (ja) * 1984-02-20 1985-09-09 Matsushita Electronics Corp トランジスタの製造方法
US4883767A (en) * 1986-12-05 1989-11-28 General Electric Company Method of fabricating self aligned semiconductor devices
US5010034A (en) * 1989-03-07 1991-04-23 National Semiconductor Corporation CMOS and bipolar fabrication process using selective epitaxial growth scalable to below 0.5 micron
US6399465B1 (en) * 2000-02-24 2002-06-04 United Microelectronics Corp. Method for forming a triple well structure

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3342650A (en) * 1964-02-10 1967-09-19 Hitachi Ltd Method of making semiconductor devices by double masking

Also Published As

Publication number Publication date
CH499205A (fr) 1970-11-15
US3635772A (en) 1972-01-18
NL6904936A (en:Method) 1969-10-14
FR1569872A (en:Method) 1969-06-06
DE1918054A1 (de) 1969-10-23
GB1218676A (en) 1971-01-06
FR95067E (fr) 1970-06-19

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