BE694600A - - Google Patents

Info

Publication number
BE694600A
BE694600A BE694600DA BE694600A BE 694600 A BE694600 A BE 694600A BE 694600D A BE694600D A BE 694600DA BE 694600 A BE694600 A BE 694600A
Authority
BE
Belgium
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of BE694600A publication Critical patent/BE694600A/xx

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22FCHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/16Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of other metals or alloys based thereon
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22FCHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/10Reaction chambers; Selection of materials therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S118/00Coating apparatus
    • Y10S118/90Semiconductor vapor doping

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
BE694600D 1966-02-25 1967-02-24 BE694600A (US08197722-20120612-C00093.png)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES0102224 1966-02-25

Publications (1)

Publication Number Publication Date
BE694600A true BE694600A (US08197722-20120612-C00093.png) 1967-08-24

Family

ID=7524285

Family Applications (1)

Application Number Title Priority Date Filing Date
BE694600D BE694600A (US08197722-20120612-C00093.png) 1966-02-25 1967-02-24

Country Status (8)

Country Link
US (1) US3492969A (US08197722-20120612-C00093.png)
BE (1) BE694600A (US08197722-20120612-C00093.png)
CH (1) CH497200A (US08197722-20120612-C00093.png)
DE (1) DE1521494B1 (US08197722-20120612-C00093.png)
FR (1) FR1511998A (US08197722-20120612-C00093.png)
GB (1) GB1178765A (US08197722-20120612-C00093.png)
NL (1) NL6701975A (US08197722-20120612-C00093.png)
SE (1) SE388215B (US08197722-20120612-C00093.png)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1916818A1 (de) * 1968-06-28 1970-03-12 Euratom Verfahren und Vorrichtung zur Vakuumaufdampfung monokristalliner Schichten
US4020791A (en) * 1969-06-30 1977-05-03 Siemens Aktiengesellschaft Apparatus for indiffusing dopants into semiconductor material
US3868924A (en) * 1969-06-30 1975-03-04 Siemens Ag Apparatus for indiffusing dopants into semiconductor material
DE2033444C3 (de) * 1970-07-06 1979-02-15 Siemens Ag Vorrichtung zum Eindiffundieren von Dotierstoffen in Scheiben aus Halbleitermaterial
US3805735A (en) * 1970-07-27 1974-04-23 Siemens Ag Device for indiffusing dopants into semiconductor wafers
DE2131722A1 (de) * 1971-06-25 1972-12-28 Siemens Ag Anordnung zum Eindiffundieren von Dotierstoffen
US3823685A (en) * 1971-08-05 1974-07-16 Ncr Co Processing apparatus
DE2324365C3 (de) * 1973-05-14 1978-05-11 Siemens Ag, 1000 Berlin Und 8000 Muenchen Reaktionsgefäß zum Abscheiden von Halbleitermaterial auf erhitzte Trägerkörper
BE817066R (fr) * 1973-11-29 1974-10-16 Enceinte de reaction pour le depot de matiere semi-concuctrice sur des corps de support chauffes
DE2518853C3 (de) * 1975-04-28 1979-03-22 Siemens Ag, 1000 Berlin Und 8000 Muenchen Vorrichtung zum Abscheiden von elementarem Silicium aus einem Reaktionsgas
DE2730212A1 (de) * 1977-07-04 1979-01-25 Siemens Ag Anordnung zur aufnahme von in stapelform zu diffundierenden halbleiterkristallscheiben
DE2849240C2 (de) * 1978-11-13 1983-01-13 Siemens Ag, 1000 Berlin Und 8000 Muenchen CVD-Beschichtungsvorrichtung für Kleinteile und ihre Verwendung
DE3208381A1 (de) * 1982-03-09 1983-09-15 Heraeus Quarzschmelze Gmbh, 6450 Hanau Glocke aus quarzgut
US4592307A (en) * 1985-02-28 1986-06-03 Rca Corporation Vapor phase deposition apparatus

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US263830A (en) * 1882-09-05 Edward weston
US1584728A (en) * 1922-04-18 1926-05-18 Case Res Lab Inc Method of manufacturing mirrors
AT185893B (de) * 1952-04-19 1956-06-11 Ibm Verfahren zur Herstellung von P-N-Schichten in Halbleitern
US2686212A (en) * 1953-08-03 1954-08-10 Gen Electric Electric heating apparatus
NL209709A (US08197722-20120612-C00093.png) * 1955-08-25
NL210216A (US08197722-20120612-C00093.png) * 1955-12-02
US3001892A (en) * 1958-03-26 1961-09-26 Gen Electric Evaporation method and apparatus
US3244141A (en) * 1958-07-09 1966-04-05 Chrysler Corp Apparatus for obtaining metal carbide coating on base materials
DE1154693B (de) * 1959-03-07 1963-09-19 Siemens Ag Verfahren zur Herstellung von Halbleiteranordnungen
US3036888A (en) * 1959-12-29 1962-05-29 Norton Co Process for producing titanium nitride
US3243174A (en) * 1960-03-08 1966-03-29 Chilean Nitrate Sales Corp Dissociation-deposition apparatus for the production of metals
DE1137807B (de) * 1961-06-09 1962-10-11 Siemens Ag Verfahren zur Herstellung von Halbleiteranordnungen durch einkristalline Abscheidung von Halbleitermaterial aus der Gasphase
US3140965A (en) * 1961-07-22 1964-07-14 Siemens Ag Vapor deposition onto stacked semiconductor wafers followed by particular cooling
US3227431A (en) * 1961-11-22 1966-01-04 Nat Res Corp Crucible externally lined with filamentary carbon
US3213826A (en) * 1962-03-05 1965-10-26 Sperry Rand Corp Electrostatic direction of exploded vapors
US3211128A (en) * 1962-05-31 1965-10-12 Roy F Potter Vacuum evaporator apparatus
DE1244733B (de) * 1963-11-05 1967-07-20 Siemens Ag Vorrichtung zum Aufwachsen einkristalliner Halbleitermaterialschichten auf einkristallinen Grundkoerpern

Also Published As

Publication number Publication date
NL6701975A (US08197722-20120612-C00093.png) 1967-08-28
US3492969A (en) 1970-02-03
CH497200A (de) 1970-10-15
DE1521494B1 (de) 1970-11-26
GB1178765A (en) 1970-01-21
SE388215B (sv) 1976-09-27
FR1511998A (fr) 1968-02-02

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