BE694479A - - Google Patents

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Publication number
BE694479A
BE694479A BE694479DA BE694479A BE 694479 A BE694479 A BE 694479A BE 694479D A BE694479D A BE 694479DA BE 694479 A BE694479 A BE 694479A
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BE
Belgium
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of BE694479A publication Critical patent/BE694479A/xx

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/18—Metallic material, boron or silicon on other inorganic substrates
    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
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    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
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    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
    • H01L2224/486—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48617—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950 °C
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    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
BE694479D 1966-03-19 1967-02-22 BE694479A (hr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES102622A DE1283970B (de) 1966-03-19 1966-03-19 Metallischer Kontakt an einem Halbleiterbauelement

Publications (1)

Publication Number Publication Date
BE694479A true BE694479A (hr) 1967-07-31

Family

ID=7524571

Family Applications (1)

Application Number Title Priority Date Filing Date
BE694479D BE694479A (hr) 1966-03-19 1967-02-22

Country Status (8)

Country Link
US (1) US3633076A (hr)
BE (1) BE694479A (hr)
CH (1) CH457627A (hr)
DE (1) DE1283970B (hr)
FR (1) FR1515415A (hr)
GB (1) GB1174613A (hr)
NL (1) NL6702273A (hr)
SE (1) SE312864B (hr)

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GB1263381A (en) * 1968-05-17 1972-02-09 Texas Instruments Inc Metal contact and interconnection system for nonhermetic enclosed semiconductor devices
CH497792A (de) * 1968-06-28 1970-10-15 Ibm Verfahren zur Herstellung von Halbleitervorrichtungen
BE763522A (fr) * 1970-03-03 1971-07-16 Licentia Gmbh Serie de couches de contact pour des elements de construction semi-conducteurs
US3769688A (en) * 1972-04-21 1973-11-06 Rca Corp Method of making an electrically-insulating seal between a metal body and a semiconductor device
JPS5745061B2 (hr) * 1972-05-02 1982-09-25
US4106860A (en) * 1973-09-07 1978-08-15 Bbc Brown Boveri & Company Limited Liquid-crystal cell
JPS5341064B2 (hr) * 1974-02-25 1978-10-31
US4096510A (en) * 1974-08-19 1978-06-20 Matsushita Electric Industrial Co., Ltd. Thermal printing head
JPS5152277A (ja) * 1974-09-24 1976-05-08 Hitachi Ltd Handotaisochi
JPS51142988A (en) * 1975-06-04 1976-12-08 Hitachi Ltd Semiconductor devices
US4042951A (en) * 1975-09-25 1977-08-16 Texas Instruments Incorporated Gold-germanium alloy contacts for a semiconductor device
US4065588A (en) * 1975-11-20 1977-12-27 Rca Corporation Method of making gold-cobalt contact for silicon devices
DE2807350C2 (de) * 1977-03-02 1983-01-13 Sharp K.K., Osaka Flüssigkristall-Anzeigevorrichtung in Baueinheit mit einem integrierten Schaltkreis
FR2431900A1 (fr) * 1978-07-25 1980-02-22 Thomson Csf Systeme de soudure d'un laser a semiconducteur sur un socle metallique
US4214256A (en) * 1978-09-08 1980-07-22 International Business Machines Corporation Tantalum semiconductor contacts and method for fabricating same
DE2926785C2 (de) * 1979-07-03 1985-12-12 HIGRATHERM electric GmbH, 7100 Heilbronn Bipolarer Transistor und Verfahren zu seiner Herstellung
NL8004139A (nl) * 1980-07-18 1982-02-16 Philips Nv Halfgeleiderinrichting.
DE3039658A1 (de) * 1980-10-21 1982-05-06 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Mit edelmetall beschichtetes molybdaen und verfahren zu seiner herstellung
JPS5778173A (en) * 1980-11-04 1982-05-15 Hitachi Ltd Semiconductor device and manufacture thereof
US4482913A (en) * 1982-02-24 1984-11-13 Westinghouse Electric Corp. Semiconductor device soldered to a graphite substrate
JPS60119777A (ja) * 1983-11-30 1985-06-27 Mitsubishi Electric Corp ゲ−トタ−ンオフサイリスタ
US4736236A (en) * 1984-03-08 1988-04-05 Olin Corporation Tape bonding material and structure for electronic circuit fabrication
US4737839A (en) * 1984-03-19 1988-04-12 Trilogy Computer Development Partners, Ltd. Semiconductor chip mounting system
EP0266093B1 (en) * 1986-10-27 1992-09-23 Electric Power Research Institute, Inc Process of making a high power multi-layer semiconductive switching device with multiple parallel contacts
US4974056A (en) * 1987-05-22 1990-11-27 International Business Machines Corporation Stacked metal silicide gate structure with barrier
US5367195A (en) * 1993-01-08 1994-11-22 International Business Machines Corporation Structure and method for a superbarrier to prevent diffusion between a noble and a non-noble metal
US5503286A (en) * 1994-06-28 1996-04-02 International Business Machines Corporation Electroplated solder terminal
US6897141B2 (en) * 2002-10-23 2005-05-24 Ocube Digital Co., Ltd. Solder terminal and fabricating method thereof
US9093385B2 (en) * 2013-05-28 2015-07-28 Infineon Technologies Ag Method for processing a semiconductor workpiece with metallization

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Publication number Priority date Publication date Assignee Title
US2973466A (en) * 1959-09-09 1961-02-28 Bell Telephone Labor Inc Semiconductor contact
FR1246813A (fr) * 1959-10-10 1960-11-25 Perfectionnements à la fabrication des éléments semi-conducteurs
BE637621A (hr) * 1962-05-25 1900-01-01
US3290753A (en) * 1963-08-19 1966-12-13 Bell Telephone Labor Inc Method of making semiconductor integrated circuit elements
NL134170C (hr) * 1963-12-17 1900-01-01
US3370207A (en) * 1964-02-24 1968-02-20 Gen Electric Multilayer contact system for semiconductor devices including gold and copper layers
US3290127A (en) * 1964-03-30 1966-12-06 Bell Telephone Labor Inc Barrier diode with metal contact and method of making
GB1104804A (en) * 1964-04-28 1968-02-28 Texas Instruments Inc Improvements relating to semiconductor devices
US3341753A (en) * 1964-10-21 1967-09-12 Texas Instruments Inc Metallic contacts for semiconductor devices

Also Published As

Publication number Publication date
DE1283970B (de) 1968-11-28
NL6702273A (hr) 1967-09-20
SE312864B (hr) 1969-07-28
US3633076A (en) 1972-01-04
CH457627A (de) 1968-06-15
FR1515415A (fr) 1968-03-01
GB1174613A (en) 1969-12-17

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