BE688717A - - Google Patents
Info
- Publication number
- BE688717A BE688717A BE688717DA BE688717A BE 688717 A BE688717 A BE 688717A BE 688717D A BE688717D A BE 688717DA BE 688717 A BE688717 A BE 688717A
- Authority
- BE
- Belgium
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
- C30B35/002—Crucibles or containers
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
- C30B31/14—Substrate holders or susceptors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S118/00—Coating apparatus
- Y10S118/90—Semiconductor vapor doping
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES0100151 | 1965-10-22 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| BE688717A true BE688717A (en:Method) | 1967-04-21 |
Family
ID=7522855
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BE688717D BE688717A (en:Method) | 1965-10-22 | 1966-10-21 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US3526205A (en:Method) |
| BE (1) | BE688717A (en:Method) |
| CH (1) | CH479712A (en:Method) |
| DE (1) | DE1521481B1 (en:Method) |
| FR (1) | FR1502957A (en:Method) |
| GB (1) | GB1158467A (en:Method) |
| NL (1) | NL6613863A (en:Method) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1801187B1 (de) * | 1968-10-04 | 1970-04-16 | Siemens Ag | Vorrichtung zur Waermebehandlung von Siliziumscheiben |
| US3805735A (en) * | 1970-07-27 | 1974-04-23 | Siemens Ag | Device for indiffusing dopants into semiconductor wafers |
| DE2131722A1 (de) * | 1971-06-25 | 1972-12-28 | Siemens Ag | Anordnung zum Eindiffundieren von Dotierstoffen |
| DE2133843A1 (de) * | 1971-07-07 | 1973-01-18 | Siemens Ag | Anordnung zum eindiffundieren von dotierstoffen in halbleiterscheiben |
| US4275094A (en) * | 1977-10-31 | 1981-06-23 | Fujitsu Limited | Process for high pressure oxidation of silicon |
| JPS5944771B2 (ja) * | 1979-03-29 | 1984-11-01 | テルサ−ムコ株式会社 | 半導体熱処理炉 |
| JPS5942970B2 (ja) * | 1979-03-29 | 1984-10-18 | テルサ−ムコ株式会社 | 半導体熱処理用反応管 |
| JPS5923464B2 (ja) * | 1979-04-18 | 1984-06-02 | テルサ−ムコ株式会社 | 半導体熱処理装置 |
| JPH03185717A (ja) * | 1989-12-14 | 1991-08-13 | Toshiba Corp | 拡散型半導体素子の製造方法 |
-
1965
- 1965-10-22 DE DE19651521481 patent/DE1521481B1/de active Pending
-
1966
- 1966-09-30 NL NL6613863A patent/NL6613863A/xx unknown
- 1966-10-17 CH CH1495966A patent/CH479712A/de not_active IP Right Cessation
- 1966-10-18 FR FR80470A patent/FR1502957A/fr not_active Expired
- 1966-10-19 US US587713A patent/US3526205A/en not_active Expired - Lifetime
- 1966-10-21 BE BE688717D patent/BE688717A/xx unknown
- 1966-10-24 GB GB47739/66A patent/GB1158467A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| CH479712A (de) | 1969-10-15 |
| FR1502957A (fr) | 1967-11-24 |
| US3526205A (en) | 1970-09-01 |
| NL6613863A (en:Method) | 1967-04-24 |
| GB1158467A (en) | 1969-07-16 |
| DE1521481B1 (de) | 1969-12-04 |