FR1502957A - Dispositif pour le traitement thermique des corps semi-conducteurs en forme de pastilles - Google Patents

Dispositif pour le traitement thermique des corps semi-conducteurs en forme de pastilles

Info

Publication number
FR1502957A
FR1502957A FR80470A FR80470A FR1502957A FR 1502957 A FR1502957 A FR 1502957A FR 80470 A FR80470 A FR 80470A FR 80470 A FR80470 A FR 80470A FR 1502957 A FR1502957 A FR 1502957A
Authority
FR
France
Prior art keywords
pellets
heat treatment
semiconductor bodies
bodies
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR80470A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Schuckertwerke AG
Siemens AG
Original Assignee
Siemens Schuckertwerke AG
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Schuckertwerke AG, Siemens AG filed Critical Siemens Schuckertwerke AG
Application granted granted Critical
Publication of FR1502957A publication Critical patent/FR1502957A/fr
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • C30B35/002—Crucibles or containers
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/14—Substrate holders or susceptors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S118/00—Coating apparatus
    • Y10S118/90—Semiconductor vapor doping

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
FR80470A 1965-10-22 1966-10-18 Dispositif pour le traitement thermique des corps semi-conducteurs en forme de pastilles Expired FR1502957A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES0100151 1965-10-22

Publications (1)

Publication Number Publication Date
FR1502957A true FR1502957A (fr) 1967-11-24

Family

ID=7522855

Family Applications (1)

Application Number Title Priority Date Filing Date
FR80470A Expired FR1502957A (fr) 1965-10-22 1966-10-18 Dispositif pour le traitement thermique des corps semi-conducteurs en forme de pastilles

Country Status (7)

Country Link
US (1) US3526205A (fr)
BE (1) BE688717A (fr)
CH (1) CH479712A (fr)
DE (1) DE1521481B1 (fr)
FR (1) FR1502957A (fr)
GB (1) GB1158467A (fr)
NL (1) NL6613863A (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1801187B1 (de) * 1968-10-04 1970-04-16 Siemens Ag Vorrichtung zur Waermebehandlung von Siliziumscheiben

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3805735A (en) * 1970-07-27 1974-04-23 Siemens Ag Device for indiffusing dopants into semiconductor wafers
DE2131722A1 (de) * 1971-06-25 1972-12-28 Siemens Ag Anordnung zum Eindiffundieren von Dotierstoffen
DE2133843A1 (de) * 1971-07-07 1973-01-18 Siemens Ag Anordnung zum eindiffundieren von dotierstoffen in halbleiterscheiben
US4275094A (en) * 1977-10-31 1981-06-23 Fujitsu Limited Process for high pressure oxidation of silicon
JPS5942970B2 (ja) * 1979-03-29 1984-10-18 テルサ−ムコ株式会社 半導体熱処理用反応管
JPS5944771B2 (ja) * 1979-03-29 1984-11-01 テルサ−ムコ株式会社 半導体熱処理炉
JPS5923464B2 (ja) * 1979-04-18 1984-06-02 テルサ−ムコ株式会社 半導体熱処理装置
JPH03185717A (ja) * 1989-12-14 1991-08-13 Toshiba Corp 拡散型半導体素子の製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1801187B1 (de) * 1968-10-04 1970-04-16 Siemens Ag Vorrichtung zur Waermebehandlung von Siliziumscheiben

Also Published As

Publication number Publication date
DE1521481B1 (de) 1969-12-04
NL6613863A (fr) 1967-04-24
GB1158467A (en) 1969-07-16
US3526205A (en) 1970-09-01
CH479712A (de) 1969-10-15
BE688717A (fr) 1967-04-21

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