BE683386A - - Google Patents

Info

Publication number
BE683386A
BE683386A BE683386DA BE683386A BE 683386 A BE683386 A BE 683386A BE 683386D A BE683386D A BE 683386DA BE 683386 A BE683386 A BE 683386A
Authority
BE
Belgium
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of BE683386A publication Critical patent/BE683386A/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G7/00—Capacitors in which the capacitance is varied by non-mechanical means; Processes of their manufacture
    • H01G7/02—Electrets, i.e. having a permanently-polarised dielectric
    • H01G7/025—Electrets, i.e. having a permanently-polarised dielectric having an inorganic dielectric
    • H01G7/026—Electrets, i.e. having a permanently-polarised dielectric having an inorganic dielectric with ceramic dielectric
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G33/00—Compounds of niobium
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/495—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on vanadium, niobium, tantalum, molybdenum or tungsten oxides or solid solutions thereof with other oxides, e.g. vanadates, niobates, tantalates, molybdates or tungstates
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C30B15/18—Heating of the melt or the crystallised materials using direct resistance heating in addition to other methods of heating, e.g. using Peltier heat
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/30—Niobates; Vanadates; Tantalates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G7/00—Capacitors in which the capacitance is varied by non-mechanical means; Processes of their manufacture
    • H01G7/02—Electrets, i.e. having a permanently-polarised dielectric
    • H01G7/025—Electrets, i.e. having a permanently-polarised dielectric having an inorganic dielectric
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/60—Optical properties, e.g. expressed in CIELAB-values
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/901—Levitation, reduced gravity, microgravity, space
    • Y10S117/902—Specified orientation, shape, crystallography, or size of seed or substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/42—Piezoelectric device making

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Ceramic Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Structural Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
BE683386D 1965-07-12 1966-06-29 BE683386A (nl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US47124065A 1965-07-12 1965-07-12
US516357A US3346344A (en) 1965-07-12 1965-12-27 Growth of lithium niobate crystals

Publications (1)

Publication Number Publication Date
BE683386A true BE683386A (nl) 1966-12-01

Family

ID=27043367

Family Applications (1)

Application Number Title Priority Date Filing Date
BE683386D BE683386A (nl) 1965-07-12 1966-06-29

Country Status (7)

Country Link
US (1) US3346344A (nl)
JP (1) JPS5340719B1 (nl)
BE (1) BE683386A (nl)
DE (1) DE1667866B1 (nl)
GB (2) GB1149492A (nl)
NL (1) NL149090B (nl)
SE (1) SE332136B (nl)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114773058A (zh) * 2022-03-24 2022-07-22 华南理工大学 一种负离子功能材料及其制备方法和应用

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3446603A (en) * 1965-07-12 1969-05-27 Bell Telephone Labor Inc Growth of lithium niobate crystals
US3418086A (en) * 1966-06-20 1968-12-24 Bell Telephone Labor Inc Lithium meta-niobate crystalline growth from melt containing magnesium oxide
US3428438A (en) * 1966-11-14 1969-02-18 Hughes Aircraft Co Potassium tantalate niobate crystal growth from a melt
US3528765A (en) * 1967-06-08 1970-09-15 Union Carbide Corp Lithium niobate crystals having elevated phase matching temperatures and method therefor
US3653814A (en) * 1970-08-03 1972-04-04 Bell Telephone Labor Inc Technique for the growth of single crystal lead molybdate
US4045278A (en) * 1973-11-22 1977-08-30 Siemens Aktiengesellschaft Method and apparatus for floating melt zone of semiconductor crystal rods
US4001076A (en) * 1974-12-11 1977-01-04 Gte Laboratories Incorporated Method for growing thin epitaxial layers of a non-linear, optically active material
DE2624357A1 (de) * 1975-06-11 1976-12-23 Commissariat Energie Atomique Verfahren und vorrichtung zum messen und regeln der erstarrung eines fluessig/ fest-zweiphasensystems
US3980438A (en) * 1975-08-28 1976-09-14 Arthur D. Little, Inc. Apparatus for forming semiconductor crystals of essentially uniform diameter
JPS5264698A (en) * 1975-11-22 1977-05-28 Fujitsu Ltd Process for treating single area
US4330359A (en) * 1981-02-10 1982-05-18 Lovelace Alan M Administrator Electromigration process for the purification of molten silicon during crystal growth
FR2526449B1 (fr) * 1982-05-04 1985-07-05 Commissariat Energie Atomique Procede et dispositif de fabrication d'un monocristal, exempt de toute contrainte, d'un compose ferroelectrique a structure cristalline
DE3887316T2 (de) * 1987-08-27 1994-06-09 Hughes Aircraft Co VERFAHREN ZUR REINIGUNG VON (Nb1-xTax)2O5 UND DIE HERSTELLUNG VON KNb1-xTaxO3-KRISTALLEN.
DE10306801A1 (de) * 2003-02-18 2004-09-02 Schott Glas Verfahren zur Herstellung von hexagonalen Einkristallen und deren Verwendung als Substrat für Halbleiterbauelemente
CH696907A5 (de) 2003-02-18 2008-01-31 Schott Ag Verfahren zum Herstellen von hexagonalen Einkristallen und deren Verwendung als Substrat für Halbleiterbauelemente.
DE102004002109A1 (de) * 2004-01-14 2005-08-11 Deutsche Telekom Ag Behandlung von Kristallen zur Vermeidung lichtinduzierter Änderungen des Brechungsindex
US8261690B2 (en) * 2006-07-14 2012-09-11 Georgia Tech Research Corporation In-situ flux measurement devices, methods, and systems
CN105624790A (zh) 2016-03-01 2016-06-01 南开大学 铋镁双掺铌酸锂晶体

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2702427A (en) * 1948-03-13 1955-02-22 Roberts Shepard Method of making electromechanically sensitive material
US2706326A (en) * 1952-04-23 1955-04-19 Bell Telephone Labor Inc Polarization process for pseudocubic ferroelectrics
DE959479C (de) * 1952-09-23 1957-03-07 Siemens Ag Verfahren zum Ziehen von Halbleiterkristallen aus einer Schmelze fuer elektrisch unsymmetrisch leitende Systeme mit oertlich verschieden grosser Stoerstellenkonzentration
US2983988A (en) * 1953-06-16 1961-05-16 Honeywell Regulator Co Method of polarizing transducers
US2842467A (en) * 1954-04-28 1958-07-08 Ibm Method of growing semi-conductors
US2777188A (en) * 1954-12-21 1957-01-15 Bell Telephone Labor Inc Method and apparatus for processing ferroelectric crystal elements
US2758008A (en) * 1955-03-24 1956-08-07 Ibm Process of preparing pure alkali metal niobate
US3283164A (en) * 1963-12-19 1966-11-01 Bell Telephone Labor Inc Devices utilizing lithium meta-gallate

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114773058A (zh) * 2022-03-24 2022-07-22 华南理工大学 一种负离子功能材料及其制备方法和应用
CN114773058B (zh) * 2022-03-24 2023-06-20 华南理工大学 一种负离子功能材料及其制备方法和应用

Also Published As

Publication number Publication date
US3346344A (en) 1967-10-10
GB1149492A (en) 1969-04-23
NL6609451A (nl) 1967-01-13
NL149090B (nl) 1976-04-15
JPS5340719B1 (nl) 1978-10-28
SE332136B (nl) 1971-01-25
GB1172980A (en) 1969-12-03
DE1667866B1 (de) 1972-03-23

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